Inventor · disambiguated record
Tzung-Ting Han
Also filed as: HAN TZUNG-TING
47 granted patents·14 pending applications·135 citations·filing 2002–2024
97Inventor score
Top patents by PatentIndex Score
61 records- 0192US7435648B2Methods of trench and contact formation in memory cellsMACRONIX INT CO LTD·Filed 2006·Granted Oct 14, 2008·29 cites·24 claims
- 0291US10304680B1Fabricating semiconductor devices having patterns with different feature sizesMACRONIX INT CO LTD·Filed 2017·Granted May 28, 2019·7 cites·18 claims
- 0389US11727971B2Memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2020·Granted Aug 15, 2023·2 cites·12 claims
- 0489US9748332B1Non-volatile semiconductor memoryMACRONIX INT CO LTD·Filed 2016·Granted Aug 29, 2017·8 cites·16 claims
- 0588US11411020B2Memory device with sub-slitsMACRONIX INT CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·18 claims
- 0682US7889556B2Flash memory having insulating liners between source/drain lines and channelsMACRONIX INT CO LTD·Filed 2010·Granted Feb 15, 2011·7 cites·6 claims
- 0781US7668010B2Flash memory having insulating liners between source/drain lines and channelsMACRONIX INT CO LTD·Filed 2008·Granted Feb 23, 2010·7 cites·22 claims
- 0874US7710774B2NAND type multi-bit charge storage memory array and methods for operating and fabricating the sameMACRONIX INT CO LTD·Filed 2005·Granted May 4, 2010·12 cites·6 claims
- 0972US12062615B2Memory deviceMACRONIX INT CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 1072US9847339B2Self-aligned multiple patterning semiconductor device fabricationMACRONIX INT CO LTD·Filed 2016·Granted Dec 19, 2017·2 cites·6 claims
- 1171US12069861B2Memory device with reduced bending stackMACRONIX INT CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 1267US7486534B2Diode-less array for one-time programmable memoryMACRONIX INT CO LTD·Filed 2005·Granted Feb 3, 2009·2 cites·9 claims
- 1367US6624023B1Method for improving the performance of flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Sep 23, 2003·24 cites·19 claims
- 1467US2023290396A1Memory deviceMACRONIX INT CO LTD·Filed 2023·Application pending·0 cites
- 1566US9070753B1Method for fabricating memory deviceMACRONIX INT CO LTD·Filed 2014·Granted Jun 30, 2015·2 cites·20 claims
- 1666US6777764B2ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition processMACRONIX INT CO LTD·Filed 2002·Granted Aug 17, 2004·10 cites·14 claims
- 1765US11610842B2Memory device and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2020·Granted Mar 21, 2023·0 cites·10 claims
- 1864US9899396B1Semiconductor device, fabricating method thereof, and fabricating method of memoryMACRONIX INT CO LTD·Filed 2016·Granted Feb 20, 2018·1 cites·14 claims
- 1962US2025267869A1Memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2024·Application pending·0 cites
- 2061US10290543B1Method for manufacturing semiconductor deviceMACRONIX INT CO LTD·Filed 2017·Granted May 14, 2019·1 cites·16 claims
- 2159US7214983B2Non-volatile memory and fabricating method thereofMACRONIX INT CO LTD·Filed 2004·Granted May 8, 2007·8 cites·6 claims
- 2258US7271062B2Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Sep 18, 2007·1 cites·11 claims
- 2357US12256548B2Semiconductor device and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 2457USRE46970EDiode-less array for one-time programmable memoryMACRONIX INT CO LTD·Filed 2016·Granted Jul 24, 2018·0 cites·31 claims
- 2556US11690222B2Three-dimensional memory deviceMACRONIX INT CO LTD·Filed 2020·Granted Jun 27, 2023·0 cites·9 claims
- 2656US8466508B2Non-volatile memory structure including stress material between stacked patternsKU SHAW-HUNG·Filed 2007·Granted Jun 18, 2013·1 cites·18 claims
- 2756US2024355732A1Memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2023·Application pending·0 cites
- 2855US12048154B2Memory device and manufacturing method thereofMACRONIX INT CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·9 claims
- 2955US9036393B2Diode-less array for one-time programmable memoryMACRONIX INT CO LTD·Filed 2013·Granted May 19, 2015·0 cites·18 claims
- 3055US7341910B2Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gateMACRONIX INT CO LTD·Filed 2002·Granted Mar 11, 2008·4 cites·6 claims
- 3153US11637125B2Memory deviceMACRONIX INT CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
- 3253US7067374B2Manufacturing methods and structures of memory deviceMACRONIX INT CO LTD·Filed 2004·Granted Jun 27, 2006·5 cites·13 claims
- 3353US2024164099A1Memory device and method for forming the sameMACRONIX INT CO LTD·Filed 2023·Application pending·0 cites
- 3452US7666784B2Methods of trench and contact formation in memory cellsMACRONIX INT CO LTD·Filed 2008·Granted Feb 23, 2010·0 cites·18 claims
- 3551US8593850B2Diode-less array for one-time programmable memoryCHEN KUAN-FU·Filed 2008·Granted Nov 26, 2013·0 cites·16 claims
- 3651US2023120621A1Memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2021·Application pending·0 cites
- 3750US7659167B2Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gateMACRONIX INT CO LTD·Filed 2006·Granted Feb 9, 2010·0 cites·4 claims
- 3849US9536887B2Airgap structure and method of manufacturing thereofMACRONIX INT CO LTD·Filed 2014·Granted Jan 3, 2017·0 cites·17 claims
- 3949US8552528B2Diode-less array for one-time programmable memoryCHEN KUAN-FU·Filed 2011·Granted Oct 8, 2013·0 cites·32 claims
- 4048US11127756B2Three-dimensional memory device and manufacturing method thereofMACRONIX INT CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·17 claims
- 4147US7776690B2Method of forming a contact on a semiconductor deviceMACRONIX INT CO LTD·Filed 2007·Granted Aug 17, 2010·0 cites·13 claims
- 4246US7888272B2Methods for manufacturing memory and logic devices using the same process without the need for additional masksMACRONIX INT CO LTD·Filed 2006·Granted Feb 15, 2011·0 cites·14 claims
- 4345US8890254B2Airgap structure and method of manufacturing thereofHUANG YU-FONG·Filed 2012·Granted Nov 18, 2014·0 cites·11 claims
- 4444US11515319B2Semiconductor memory structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·15 claims
- 4541US8466064B2Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit deviceHUANG YU-FONG·Filed 2010·Granted Jun 18, 2013·0 cites·18 claims
- 4640US8623726B2Method for filling a physical isolation trench and integrating a vertical channel array with a periphery circuitHUANG YU-FONG·Filed 2010·Granted Jan 7, 2014·0 cites·15 claims
- 4740US2016020216A1Semiconductor device and method of manufacturing thereof using a flowable material during the control gate removal for word line end formationMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 4840US2016020143A1Semiconductor Devices and Fabrication Methods With Reduced Topology And Reduced Word Line Stringer Residual MaterialMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 4938US2005037578A1[method for forming an oxide/ nitride/oxide stacked layer]Filed 2003·Application pending·0 cites
- 5037US8779500B2Memory deviceHUANG YU-FONG·Filed 2010·Granted Jul 15, 2014·0 cites·12 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →