Inventor · disambiguated record
Tzu-Fang Huang
Also filed as: HUANG TZU-FANG
21 granted patents·5 pending applications·1,021 citations·filing 2000–2022
96Inventor score
Top patents by PatentIndex Score
26 records- 0198US8129290B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2006·Granted Mar 6, 2012·492 cites·16 claims
- 0297US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 0394US6790788B2Method of improving stability in low k barrier layersAPPLIED MATERIALS INC·Filed 2003·Granted Sep 14, 2004·79 cites·26 claims
- 0492US7030041B2Adhesion improvement for low k dielectricsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 18, 2006·45 cites·20 claims
- 0589US6806207B2Method of depositing low K filmsAPPLIED MATERIALS INC·Filed 2003·Granted Oct 19, 2004·34 cites·20 claims
- 0688US6815373B2Use of cyclic siloxanes for hardness improvement of low k dielectric filmsAPPLIED MATERIALS INC·Filed 2002·Granted Nov 9, 2004·41 cites·25 claims
- 0788US6699784B2Method for depositing a low k dielectric film (K>3.5) for hard mask applicationAPPLIED MATERIALS INC·Filed 2002·Granted Mar 2, 2004·42 cites·20 claims
- 0887US6914014B2Method for curing low dielectric constant film using direct current biasAPPLIED MATERIALS INC·Filed 2003·Granted Jul 5, 2005·32 cites·47 claims
- 0986US7435685B2Method of forming a low-K dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2006·Granted Oct 14, 2008·13 cites·18 claims
- 1086US6632735B2Method of depositing low dielectric constant carbon doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·37 cites·13 claims
- 1185US7160821B2Method of depositing low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Jan 9, 2007·25 cites·20 claims
- 1284US8753989B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2012·Granted Jun 17, 2014·5 cites·14 claims
- 1380US7132369B2Method of forming a low-K dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2003·Granted Nov 7, 2006·27 cites·34 claims
- 1472US7459404B2Adhesion improvement for low k dielectricsAPPLIED MATERIALS INC·Filed 2006·Granted Dec 2, 2008·2 cites·16 claims
- 1570US7588803B2Multi step ebeam process for modifying dielectric materialsAPPLIED MATERIALS INC·Filed 2005·Granted Sep 15, 2009·3 cites·12 claims
- 1663US6911403B2Methods of reducing plasma-induced damage for advanced plasma CVD dielectricsAPPLIED MATERIALS INC·Filed 2003·Granted Jun 28, 2005·5 cites·31 claims
- 1761US12288704B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 1852US7700486B2Oxide-like seasoning for dielectric low k filmsAPPLIED MATERIALS INC·Filed 2006·Granted Apr 20, 2010·3 cites·20 claims
- 1952US6936309B2Hardness improvement of silicon carboxy filmsAPPLIED MATERIALS INC·Filed 2002·Granted Aug 30, 2005·3 cites·22 claims
- 2044US7049249B2Method of improving stability in low k barrier layersAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·0 cites·31 claims
- 2142US7115508B2Oxide-like seasoning for dielectric low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Oct 3, 2006·4 cites·14 claims
- 2242US2004234688A1Use of cyclic siloxanes for hardness improvementFiled 2004·Application pending·0 cites
- 2341US2004101632A1Method for curing low dielectric constant film by electron beamAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 2438US2004137757A1Method and apparatus to improve cracking thresholds and mechanical properties of low-k dielectric materialAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2537US2003211244A1Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectricAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2636US2003194495A1Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectricAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →