Inventor · disambiguated record
Vibhor Jain
Also filed as: JAIN VIBHOR
178 granted patents·28 pending applications·882 citations·filing 2012–2025
99Inventor score
Files withGLOBALFOUNDRIES US INC112GLOBALFOUNDRIES INC56IBM22GLOBALFOUNDRIES SG PTE LTD13GLOBALFOUNDARIES INC1
Top patents by PatentIndex Score
206 records- 0199US9324846B1Field plate in heterojunction bipolar transistor with improved break-down voltageIBM·Filed 2015·Granted Apr 26, 2016·522 cites·20 claims
- 0298US10509244B1Optical switches and routers operated by phase-changing materials controlled by heatersGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·23 cites·20 claims
- 0397US11271077B2Trap-rich layer in a high-resistivity semiconductor layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 8, 2022·4 cites·20 claims
- 0497US11152520B1Photodetector with reflector with air gap adjacent photodetecting regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 19, 2021·4 cites·19 claims
- 0596US11316064B2Photodiode and/or PIN diode structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 26, 2022·4 cites·19 claims
- 0696US11145725B2Heterojunction bipolar transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 12, 2021·4 cites·20 claims
- 0796US9368608B1Heterojunction bipolar transistor with improved performance and breakdown voltageGLOBALFOUNDARIES INC·Filed 2015·Granted Jun 14, 2016·26 cites·20 claims
- 0895US11637068B2Thermally and electrically conductive interconnectsGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 25, 2023·3 cites·14 claims
- 0995US10388728B1Structures with an airgap and methods of forming such structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·13 cites·12 claims
- 1095US9847408B1Fabrication of integrated circuit structures for bipolor transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·11 cites·11 claims
- 1195US9245951B1Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 26, 2016·20 cites·20 claims
- 1294US10197730B1Optical through silicon viaGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 5, 2019·22 cites·17 claims
- 1393US11171095B1Active attack prevention for secure integrated circuits using latchup sensitive diode circuitGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 9, 2021·3 cites·17 claims
- 1493US11121097B1Active x-ray attack prevention deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 14, 2021·3 cites·19 claims
- 1593US11063139B2Heterojunction bipolar transistors with airgap isolationGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 13, 2021·3 cites·20 claims
- 1693US9825157B1Heterojunction bipolar transistor with stress componentGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 21, 2017·9 cites·15 claims
- 1793US9722057B2Bipolar junction transistors with a buried dielectric region in the active device regionGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 1, 2017·9 cites·20 claims
- 1892US12327776B1Heat sink for face bonded semiconductor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jun 10, 2025·2 cites·17 claims
- 1992US11721719B2Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 8, 2023·2 cites·8 claims
- 2092US9159817B2Heterojunction bipolar transistors with an airgap between the extrinsic base and collectorIBM·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 2191US11791334B2Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 17, 2023·2 cites·12 claims
- 2291US10217852B1Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic baseGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·6 cites·20 claims
- 2391US10014397B1Bipolar junction transistors with a combined vertical-lateral architectureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·6 cites·16 claims
- 2491US9606291B2Multilevel waveguide structureIBM·Filed 2015·Granted Mar 28, 2017·12 cites·13 claims
- 2589US11004878B2Photodiodes integrated into a BiCMOS processGLOBALFOUNDRIES US INC·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 2689US10038063B2Tunable breakdown voltage RF FET devicesIBM·Filed 2014·Granted Jul 31, 2018·6 cites·15 claims
- 2789US9412736B2Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon viasGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 9, 2016·11 cites·19 claims
- 2888US11923446B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 5, 2024·1 cites·17 claims
- 2988US11362201B1Heterojunction bipolar transistors with undercut extrinsic base regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 3088US10983412B1Silicon photonic components fabricated using a bulk substrateGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 20, 2021·2 cites·20 claims
- 3188US10535551B2Lateral PiN diodes and schottky diodesGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 14, 2020·4 cites·18 claims
- 3288US9608096B1Implementing stress in a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·6 cites·19 claims
- 3388US9029229B2Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regionsIBM·Filed 2013·Granted May 12, 2015·10 cites·13 claims
- 3487US11710771B2Non-self-aligned lateral bipolar junction transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 3587US11127816B2Heterojunction bipolar transistors with one or more sealed airgapGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·2 cites·20 claims
- 3687US11016055B2Sensors with a front-end-of-line solution-receiving cavityGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted May 25, 2021·6 cites·20 claims
- 3787US10916642B2Heterojunction bipolar transistor with emitter base junction oxide interfaceGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 9, 2021·3 cites·18 claims
- 3887US10642125B1Optical beam steering with directionality provided by switched grating couplersGLOBALFOUNDRIES INC·Filed 2019·Granted May 5, 2020·2 cites·20 claims
- 3987US10367083B2Compact device structures for a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 30, 2019·5 cites·12 claims
- 4087US9070734B2Heterojunction bipolar transistors with reduced parasitic capacitanceIBM·Filed 2014·Granted Jun 30, 2015·7 cites·11 claims
- 4186US10312356B1Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
- 4285US10777668B2Bipolar junction transistors with a self-aligned emitter and baseGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 15, 2020·4 cites·18 claims
- 4384US8810005B1Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up regionIBM·Filed 2013·Granted Aug 19, 2014·7 cites·12 claims
- 4483US11322497B1Electronic fuse (e-fuse) cells integrated with bipolar deviceGLOBALFOUNDRIES US INC·Filed 2021·Granted May 3, 2022·1 cites·19 claims
- 4583US10211090B2Transistor with an airgap for reduced base-emitter capacitance and method of forming the transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 19, 2019·4 cites·18 claims
- 4682US9653566B2Bipolar junction transistors with an air gap in the shallow trench isolationGLOBALFOUNDRIES INC·Filed 2015·Granted May 16, 2017·3 cites·19 claims
- 4781US12389622B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 4881US12243935B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 4981US12142673B2Transistor with wrap-around extrinsic baseGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 5081US11515397B2III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 29, 2022·1 cites·20 claims
Showing the top 50 of 206 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →