Inventor · disambiguated record
Wei-Han Fan
Also filed as: FAN WEI · FAN WEI-HAN
28 granted patents·9 pending applications·119 citations·filing 2008–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD23TAIWAN SEMICONDUCTOR MFG6TSAI MING-HUAN2FAN WEI-HAN1LIN YUN JING1
Top patents by PatentIndex Score
37 records- 0194US8216906B2Method of manufacturing integrated circuit device with well controlled surface proximityTSAI MING-HUAN·Filed 2010·Granted Jul 10, 2012·21 cites·17 claims
- 0292US8455952B2Spacer elements for semiconductor deviceLIN YUN JING·Filed 2010·Granted Jun 4, 2013·22 cites·18 claims
- 0392US8445940B2Source and drain feature profile for improving device performanceTSAI MING-HUAN·Filed 2012·Granted May 21, 2013·12 cites·20 claims
- 0488US12363988B2Inner spacer features for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·1 cites·20 claims
- 0588US10446669B2Source and drain surface treatment for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 15, 2019·4 cites·20 claims
- 0688US9111906B2Method for fabricating semiconductor device having spacer elementsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·7 cites·20 claims
- 0787US8569139B2Method of manufacturing strained source/drain structuresNIEH CHUN-FENG·Filed 2010·Granted Oct 29, 2013·8 cites·20 claims
- 0886US12382703B2Spacer features for nanosheet-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 5, 2025·1 cites·20 claims
- 0986US2025359181A1Source and Drain Engineering Process for Multigate DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1085US8709897B2High performance strained source-drain structure and method of fabricating the sameSUNG HSUEH-CHANG·Filed 2010·Granted Apr 29, 2014·9 cites·20 claims
- 1185US8680625B2Facet-free semiconductor deviceFAN WEI-HAN·Filed 2010·Granted Mar 25, 2014·12 cites·20 claims
- 1280US2025359193A1Semiconductor device structure with nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1378US12457770B2Source and drain engineering process for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 1476US2025338590A1Inner spacer for a multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1576US2025318245A1Spacer features for nanosheet-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1675US2025318246A1Inner Spacer Features For Multi-Gate TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1774US12302615B2Epitaxial structures exposed in airgaps for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1874US8462516B2Interconnect structure and a method of fabricating the sameWONG CHEE KHUEN STEPHEN·Filed 2008·Granted Jun 11, 2013·14 cites·3 claims
- 1974US2024379772A1Self-aligning backside contact process and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2073US9153655B2Spacer elements for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·2 cites·17 claims
- 2172US9048253B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·2 cites·21 claims
- 2272US2024363714A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2371US8368147B2Strained semiconductor device with recessed channelTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·3 cites·12 claims
- 2469US12191369B2Source and drain engineering process for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 2565US12142647B2Self-aligning backside contact process and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·20 claims
- 2665US8735988B2Semiconductor device having a first spacer element and an adjacent second spacer elementTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·1 cites·19 claims
- 2764US12051732B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 2864US11923409B2Epitaxial structures exposed in airgaps for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 2962US10868149B2Source and drain surface treatment for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 3060US12402364B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 26, 2025·0 cites·20 claims
- 3157US11955547B2Semiconductor device including an epitaxy regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 9, 2024·0 cites·20 claims
- 3255US9698057B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 4, 2017·0 cites·20 claims
- 3354US10164093B2Semiconductor device including an epitaxy regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 3454US9293537B2High performance strained source-drain structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·0 cites·20 claims
- 3552US2023019386A1Isolation Features For Semiconductor Devices And Methods Of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3651US2023134971A1Method Of Fabricating Epitaxial Source/Drain FeatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3741US9595477B2Semiconductor device including an epitaxy regionPAN TE-JEN·Filed 2011·Granted Mar 14, 2017·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →