Inventor · disambiguated record
Wei Hong
Also filed as: HONG WEI · HONG WEI-KAI
25 granted patents·4 pending applications·86 citations·filing 2000–2025
93Inventor score
Files withGLOBALFOUNDRIES INC15GLOBALFOUNDRIES US INC5MEDIATEK INC4APPLIED MATERIALS INC3NAT SCIENCE COUNCIL2
Top patents by PatentIndex Score
29 records- 0197US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 0290US10396206B2Gate cut methodGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 27, 2019·7 cites·16 claims
- 0389US10784342B1Single diffusion breaks formed with liner protection for source and drain regionsGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 22, 2020·6 cites·17 claims
- 0483US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 0583US9882588B2Matching network for load line changeMEDIATEK INC·Filed 2016·Granted Jan 30, 2018·5 cites·27 claims
- 0682US6350628B1Method of fabricating a field emission device on the sidewalls of holes formed in an insulator layerNAT SCIENCE COUNCIL·Filed 2000·Granted Feb 26, 2002·21 cites·17 claims
- 0781US10756184B2Faceted epitaxial source/drain regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 25, 2020·3 cites·17 claims
- 0879US10957578B2Single diffusion break device for FDSOIGLOBALFOUNDRIES US INC·Filed 2018·Granted Mar 23, 2021·2 cites·20 claims
- 0977US10825897B2Formation of enhanced faceted raised source/drain EPI material for transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 3, 2020·2 cites·14 claims
- 1077US10777642B2Formation of enhanced faceted raised source/drain epi material for transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 15, 2020·2 cites·18 claims
- 1171US11228281B2Apparatus and method for calibrating characteristics of power amplifier in transmitterMEDIATEK INC·Filed 2019·Granted Jan 18, 2022·2 cites·16 claims
- 1270US10811422B2Semiconductor recess to epitaxial regions and related integrated circuit structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 20, 2020·1 cites·19 claims
- 1369US6517405B1Process for forming a film on a substrate having a field emitterNAT SCIENCE COUNCIL·Filed 2000·Granted Feb 11, 2003·9 cites·2 claims
- 1466US12262559B2Monolithic complementary field-effect transistors having carbon-doped release layersAPPLIED MATERIALS INC·Filed 2022·Granted Mar 25, 2025·0 cites·13 claims
- 1565US2025194243A1Monolithic complementary field-effect transistors having carbon-doped release layersAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1656US2025261423A1Formation of gate all around deviceAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1755US2024243769A1Radio frequency front-end circuit of wireless communication deviceMEDIATEK INC·Filed 2024·Application pending·0 cites
- 1853US11004953B2Mask-free methods of forming structures in a semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2019·Granted May 11, 2021·0 cites·11 claims
- 1952US10896853B2Mask-free methods of forming structures in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Jan 19, 2021·0 cites·19 claims
- 2051US11239336B2Integrated circuit structure with niobium-based silicide layer and methods to form sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·12 claims
- 2150US10714577B2Etch stop layer for use in forming contacts that extend to multiple depthsGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
- 2250US10636894B2Fin-type transistors with spacers on the gatesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 2349US10546775B1Field-effect transistors with improved dielectric gap fillGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 28, 2020·0 cites·19 claims
- 2448US11164794B2Semiconductor structures in a wide gate pitch region of semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 2, 2021·0 cites·19 claims
- 2548US10700173B2FinFET device with a wrap-around silicide source/drain contact structureGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 30, 2020·0 cites·16 claims
- 2646US11315835B2Methods of forming an IC product comprising transistor devices with different threshold voltage levelsGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 2739US10164010B1Finfet diffusion break having protective liner in fin insulatorGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 2837US10461155B2Epitaxial region for embedded source/drain region having uniform thicknessGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 29, 2019·0 cites·10 claims
- 2930US2015244401A1Transmitting device and associated transmitting method for power efficiency enhancementMEDIATEK INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →