Inventor · disambiguated record
Wen-Chien Huang
Also filed as: HUANG WEN-CHIEN
15 granted patents·14 pending applications·65 citations·filing 2001–2022
89Inventor score
Top patents by PatentIndex Score
29 records- 0192US7423903B2Single-gate non-volatile memory and operation method thereofYIELD MICROELECTRONICS CORP·Filed 2006·Granted Sep 9, 2008·37 cites·7 claims
- 0289US10854297B1Operating method of a low current electrically erasable programmable read only memory (EEPROM) arrayYIELD MICROELECTRONICS CORP·Filed 2020·Granted Dec 1, 2020·3 cites·14 claims
- 0387US11424252B2Small-area and low-voltage anti-fuse element and arrayYIELD MICROELECTRONICS CORP·Filed 2020·Granted Aug 23, 2022·2 cites·12 claims
- 0480US8218369B2Non-volatile memory low voltage and high speed erasure methodLIN HSIN CHANG·Filed 2010·Granted Jul 10, 2012·7 cites·4 claims
- 0579US11502090B2Low-cost and low-voltage anti-fuse arrayYIELD MICROELECTRONICS CORP·Filed 2021·Granted Nov 15, 2022·1 cites·20 claims
- 0678US9240242B1Method for operating low-cost EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2014·Granted Jan 19, 2016·7 cites·20 claims
- 0772US9318208B1Method for operating small-area EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2014·Granted Apr 19, 2016·5 cites·18 claims
- 0869US10141057B1Erasing method of single-gate non-volatile memoryYIELD MICROELECTRONICS CORP·Filed 2017·Granted Nov 27, 2018·2 cites·3 claims
- 0963US10685716B1Method of fast erasing low-current EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2019·Granted Jun 16, 2020·1 cites·14 claims
- 1060US2024127944A1Fatigue data generation system and fatigue data generation methodINST INFORMATION IND·Filed 2022·Application pending·0 cites
- 1150US11380694B2Low-voltage anti-fuse elementYIELD MICROELECTRONICS CORP·Filed 2020·Granted Jul 5, 2022·0 cites·11 claims
- 1246US2008173915A1Single-gate non-volatile memory and operation method thereofLIN HSIN-CHANG·Filed 2008·Application pending·0 cites
- 1344US11004857B1Operating method of an electrically erasable programmable read only memory (EEPROM) cellYIELD MICROELECTRONICS CORP·Filed 2020·Granted May 11, 2021·0 cites·17 claims
- 1444US9601202B2Low voltage difference operated EEPROM and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2016·Granted Mar 21, 2017·0 cites·4 claims
- 1541US9281312B2Non-volatile memory with a single gate-source common terminal and operation method thereofYIELD MICROELECTRONICS CORP·Filed 2014·Granted Mar 8, 2016·0 cites·16 claims
- 1641US2015053312A1Metallic Glass Film for Medical ApplicationCHU JINN·Filed 2013·Application pending·0 cites
- 1740US2016329104A1Low voltage difference operated eeprom and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1839US2020327944A1Method of fast erasing an eeprom with low-voltages, where ions are implanted at a higher concentration to increase the intensity of the electric field between the gate and the substrate or between the gate and the transistor and thus decrease the required voltage difference for erasing the eepromYIELD MICROELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 1939US2009185429A1Non-volatile memory with single floating gate and method for operating the sameLIN HSIN CHANG·Filed 2008·Application pending·0 cites
- 2037US2021104279A1Single-gate multiple-time programming non-volatile memory array and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 2136US2008035973A1Low-noise single-gate non-volatile memory and operation method thereofLIN HSIN CHANG·Filed 2006·Application pending·0 cites
- 2235US10643708B1Method for operating low-current EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2018·Granted May 5, 2020·0 cites·14 claims
- 2335US2013334586A1Non-self-aligned non-volatile memory structureLIN HSIN CHANG·Filed 2012·Application pending·0 cites
- 2435US2020350328A1Single-gate multiple-time programming non-volatile memory and operation method thereofYIELD MICROELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 2534US10242741B1Low voltage difference operated EEPROM and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2017·Granted Mar 26, 2019·0 cites·12 claims
- 2634US2013181276A1Non-self aligned non-volatile memory structureLIN HSIN CHANG·Filed 2012·Application pending·0 cites
- 2734US2007241392A1Non-volatile flash memory structure and method for operating the sameLIN HSIN-CHANG·Filed 2006·Application pending·0 cites
- 2831US2002041457A1Color filter utilizing two complementary colorsFiled 2001·Application pending·0 cites
- 2922US2002085404A1Smart random access memoryFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →