Inventor · disambiguated record
Wen-Han Hung
Also filed as: HUNG WEN · HUNG WEN-HAN
55 granted patents·25 pending applications·258 citations·filing 1999–2025
98Inventor score
Files withUNITED MICROELECTRONICS CORP33TAIWAN SEMICONDUCTOR MFG CO LTD14WINBOND ELECTRONICS CORP6HUNG WEN-HAN5LEE KUN-HSIEN3
Top patents by PatentIndex Score
80 records- 0195US7288822B1Semiconductor structure and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Oct 30, 2007·48 cites·14 claims
- 0291US7700450B2Method for forming MOS transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 20, 2010·18 cites·45 claims
- 0391US7342284B2Semiconductor MOS transistor device and method for making the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Mar 11, 2008·16 cites·25 claims
- 0489US8211775B1Method of making transistor having metal gateMa cheng-yu·Filed 2011·Granted Jul 3, 2012·13 cites·14 claims
- 0588US7524716B2Fabricating method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 28, 2009·16 cites·8 claims
- 0687US7622344B2Method of manufacturing complementary metal oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Nov 24, 2009·14 cites·22 claims
- 0787US7410875B2Semiconductor structure and fabrication thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 12, 2008·12 cites·21 claims
- 0885US8390073B2Transistor structureHUNG WEN-HAN·Filed 2012·Granted Mar 5, 2013·6 cites·8 claims
- 0985US7618856B2Method for fabricating strained-silicon CMOS transistorsUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 17, 2009·13 cites·21 claims
- 1084US9384962B2Oxygen treatment of replacement work-function metals in CMOS transistor gatesHWANG GUANG-YAW·Filed 2011·Granted Jul 5, 2016·7 cites·22 claims
- 1181US8673758B2Structure of metal gate and fabrication method thereofMa cheng-yu·Filed 2011·Granted Mar 18, 2014·7 cites·14 claims
- 1281US8183640B2Method of fabricating transistors and a transistor structure for improving short channel effect and drain induced barrier loweringHUNG WEN-HAN·Filed 2009·Granted May 22, 2012·6 cites·9 claims
- 1379US11616013B2Extended via semiconductor structure and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·1 cites·18 claims
- 1478US8765561B2Method for fabricating semiconductor deviceHUNG WEN-HAN·Filed 2011·Granted Jul 1, 2014·4 cites·16 claims
- 1577US2023253204A1Blocking Structures on Isolation StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1676US10283361B1Blocking structures on isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·1 cites·20 claims
- 1776US7662730B2Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereofUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 16, 2010·4 cites·12 claims
- 1875US11004805B2Semiconductor device and method of fabricating same including two seal ringsWINBOND ELECTRONICS CORP·Filed 2019·Granted May 11, 2021·2 cites·20 claims
- 1975US7875520B2Method of forming CMOS transistorUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 25, 2011·6 cites·17 claims
- 2074US12199033B2Extended via semiconductor structure and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 2174US7303962B2Fabricating method of CMOS and MOS deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Dec 4, 2007·7 cites·7 claims
- 2272US12087627B2Method for forming a device with an extended via semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2372US11621165B2Blocking structures on isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 2472US7888194B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 15, 2011·3 cites·10 claims
- 2572US7888223B2Method for fabricating P-channel field-effect transistor (FET)UNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 15, 2011·3 cites·17 claims
- 2671US10854624B2Semiconductor memory device and method of manufacturing the sameWINBOND ELECTRONICS CORP·Filed 2019·Granted Dec 1, 2020·1 cites·6 claims
- 2771US7494878B2Metal-oxide-semiconductor transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 24, 2009·4 cites·14 claims
- 2870US8486795B2Method of fabricating transistorsHUNG WEN-HAN·Filed 2012·Granted Jul 16, 2013·2 cites·15 claims
- 2969US8404533B2Metal gate transistor and method for fabricating the sameMa cheng-yu·Filed 2010·Granted Mar 26, 2013·3 cites·15 claims
- 3069US7485517B2Fabricating method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 3, 2009·3 cites·5 claims
- 3168US7642166B2Method of forming metal-oxide-semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 5, 2010·3 cites·20 claims
- 3268US2025316620A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3366US8222113B2Method of forming MOS deviceTING SHYH-FANN·Filed 2009·Granted Jul 17, 2012·3 cites·13 claims
- 3466US7508053B2Semiconductor MOS transistor device and method for making the sameUNITED MICROELECTRONICS CORP·Filed 2007·Granted Mar 24, 2009·2 cites·23 claims
- 3564US10930502B2Blocking structures on isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 3664US7655987B2Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereofUNITED MICROELECTRONICS CORP·Filed 2008·Granted Feb 2, 2010·1 cites·3 claims
- 3763US7453120B2Semiconductor structureUNITD MICROELECTRONICS CORP·Filed 2007·Granted Nov 18, 2008·3 cites·13 claims
- 3862US11417678B2Method of manufacturing semiconductor memory deviceWINBOND ELECTRONICS CORP·Filed 2020·Granted Aug 16, 2022·0 cites·5 claims
- 3962US8664073B2Method for fabricating field-effect transistorLEE KUN-HSIEN·Filed 2011·Granted Mar 4, 2014·2 cites·19 claims
- 4062US7682890B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Mar 23, 2010·2 cites·10 claims
- 4162US7585790B2Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 8, 2009·2 cites·17 claims
- 4261US7927954B2Method for fabricating strained-silicon metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 19, 2011·2 cites·27 claims
- 4359US12362298B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 4458US10878916B2Erasing methodWINBOND ELECTRONICS CORP·Filed 2019·Granted Dec 29, 2020·1 cites·8 claims
- 4557US12237282B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 4657US7928512B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 19, 2011·1 cites·5 claims
- 4757US6740471B1Photoresist adhesion improvement on metal layer after photoresist rework by extra N2O treatmentFiled 2002·Granted May 25, 2004·8 cites·28 claims
- 4854US8823109B2Transistor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Sep 2, 2014·0 cites·10 claims
- 4954US7749833B2Semiconductor MOS transistor device and method for making the sameUNITED MICROELECTRONICS CORP·Filed 2009·Granted Jul 6, 2010·0 cites·27 claims
- 5054US2024387272A1Finfet device structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →