Inventor · disambiguated record
Wen-Jiun Shen
Also filed as: SHEN WEN-JIUN
12 granted patents·3 pending applications·36 citations·filing 2014–2019
87Inventor score
Files withUNITED MICROELECTRONICS CORP15
Top patents by PatentIndex Score
15 records- 0189US9385191B2FINFET structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 5, 2016·10 cites·5 claims
- 0287US9691901B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 27, 2017·6 cites·12 claims
- 0386US9899523B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 20, 2018·5 cites·19 claims
- 0486US9786510B2Fin-shaped structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 10, 2017·5 cites·6 claims
- 0581US9960084B1Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 1, 2018·3 cites·11 claims
- 0677US9224864B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 29, 2015·4 cites·19 claims
- 0773US10050146B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Aug 14, 2018·2 cites·5 claims
- 0865US9634125B2Fin field effect transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 25, 2017·1 cites·12 claims
- 0964US10930517B2Method of forming fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 23, 2021·0 cites·7 claims
- 1058US10418251B2Method of forming fin-shaped structure having ladder-shaped cross-sectional profileUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 17, 2019·0 cites·5 claims
- 1155US10529856B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 7, 2020·0 cites·19 claims
- 1249US9397190B2Fabrication method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 19, 2016·0 cites·20 claims
- 1345US2015357436A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1445US2016049496A1Mos transistor and semiconductor process for forming epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1543US2016049467A1Fin field effect transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →