Inventor · disambiguated record
Wei-Sheng Yun
Also filed as: YUN WEI-SHENG
48 granted patents·11 pending applications·92 citations·filing 2012–2025
97Inventor score
Top patents by PatentIndex Score
59 records- 0197US10818777B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 27, 2020·4 cites·20 claims
- 0297US10374059B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·14 cites·20 claims
- 0396US10355102B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 16, 2019·12 cites·20 claims
- 0495US10714592B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·11 cites·18 claims
- 0594US12211825B2Memory array, integrated circuit including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·2 cites·20 claims
- 0694US12021153B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·1 cites·20 claims
- 0794US11532521B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 0894US10497624B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·10 cites·20 claims
- 0993US12199169B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·2 cites·20 claims
- 1093US11545582B2Method for forming gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·2 cites·20 claims
- 1192US11037828B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·6 cites·20 claims
- 1292US10964798B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 1391US11322619B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 1491US10978422B2Vertical transistor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·2 cites·20 claims
- 1590US10991811B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·4 cites·20 claims
- 1687US12376345B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 1787US11776852B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
- 1886US12237421B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 25, 2025·0 cites·20 claims
- 1986US12198986B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 2086US10804375B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
- 2186US2025311375A1Gate stacks for stack-fin channel i/o devices and nanowire channel core devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2285US11677010B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·1 cites·20 claims
- 2385US10825933B2Gate-all-around structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·2 cites·20 claims
- 2482US11935958B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 19, 2024·0 cites·20 claims
- 2581US11721594B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 2681US2025194142A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2780US11043577B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·1 cites·20 claims
- 2879US10665569B2Vertical transistor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 26, 2020·2 cites·20 claims
- 2978US12317529B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3078US11616146B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 28, 2023·0 cites·20 claims
- 3177US12243930B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 3277US12142529B2Semiconductor device including a gate-all-around field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 3377US11581421B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·0 cites·20 claims
- 3477US10181524B1Vertical transistor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·2 cites·20 claims
- 3577US2024397839A1Semiconductor structure and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3677US2025151307A1Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3776US11594615B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 3876US10804367B2Gate stacks for stack-fin channel I/O devices and nanowire channel core devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·1 cites·20 claims
- 3975US2024387475A1Methods of manufacturing memory array and integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4074US12144268B2Semiconductor structure and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 4174US2024395624A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4273US2025176240A1Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4371US11621344B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 4, 2023·0 cites·20 claims
- 4471US10797174B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·1 cites·15 claims
- 4567US12376363B2Gate stacks for stack-fin channel I/O devices and nanowire channel core devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 29, 2025·0 cites·20 claims
- 4667US11605562B2Semiconductor device with fin end spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 4763US11444174B2Semiconductor device with Fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 4862US11152481B2Gate stacks for stack-fin channel I/O devices and nanowire channel core devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 19, 2021·0 cites·20 claims
- 4962US10957607B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 5059US10886180B2Semiconductor device with fin end spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·20 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →