Inventor · disambiguated record

Wei Zhao

Also filed as: ZHAO WEI · Zhao Wei-Chang

70 granted patents·20 pending applications·1,012 citations·filing 2014–2025

99Inventor score

Technology areasG11C G06F H10W H10D H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD40 SANDISK TECHNOLOGIES LLC25 SANDISK TECHNOLOGIES INC17 GLOBALFOUNDRIES US INC3 WESTERN DIGITAL TECH INC2

Top patents by PatentIndex Score

90 records

0198US10957394B1NAND string pre-charge during programming by injecting holes via substrateSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 23, 2021·14 cites·20 claims
0298US9530790B1Three-dimensional memory device containing CMOS devices over memory stack structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·159 cites·28 claims
0398US9502471B1Multi tier three-dimensional memory devices including vertically shared bit linesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 22, 2016·116 cites·26 claims
0498US9236396B1Three dimensional NAND device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·46 cites·11 claims
0598US9177966B1Three dimensional NAND devices with air gap or low-k coreSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 3, 2015·92 cites·37 claims
0697US10685978B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·18 cites·20 claims
0797US9761320B1Reducing hot electron injection type of read disturb during read recovery phase in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 12, 2017·41 cites·20 claims
0897US9640273B1Mitigating hot electron program disturbSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 2, 2017·52 cites·20 claims
0997US9361993B1Method of reducing hot electron injection type of read disturb in memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 7, 2016·52 cites·21 claims
1097US9305849B1Method of making a three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·47 cites·11 claims
1197US9286994B1Method of reducing hot electron injection type of read disturb in dummy memory cellsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 15, 2016·61 cites·20 claims
1296US11404113B2Memory device including a word line with portions with different sizes in different metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·20 claims
1396US10685979B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·13 cites·22 claims
1496US10636500B1Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel dischargeSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 28, 2020·28 cites·20 claims
1596US10629272B1Two-stage ramp up of word line voltages in memory device to suppress read disturbSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·27 cites·20 claims
1696US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
1795US11657870B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
1895US11569246B2Four CPP wide memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
1995US10770157B1Method of reducing injection type of program disturb during program pre-charge in memory deviceSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 8, 2020·18 cites·20 claims
2095US9515079B2Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 6, 2016·13 cites·13 claims
2194US10950298B1Mixed threshold voltage memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·4 cites·20 claims
2294US10726891B1Reducing post-read disturb in a nonvolatile memory deviceWESTERN DIGITAL TECH INC·Filed 2019·Granted Jul 28, 2020·15 cites·20 claims
2394US9406391B1Method of reducing hot electron injection type of read disturb in dummy memory cellsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 2, 2016·18 cites·20 claims
2493US12137548B2Four CPP wide memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·1 cites·20 claims
2593US11074966B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·6 cites·20 claims
2693US10790003B1Maintaining channel pre-charge in program operationSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
2793US9236131B1Bias to detect and prevent short circuits in three-dimensional memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·17 cites·20 claims
2893US9230982B1Protective structure to prevent short circuits in a three-dimensional memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·14 cites·17 claims
2992US11101288B2Three-dimensional memory device containing plural work function word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 24, 2021·8 cites·19 claims
3092US10685723B1Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word lineSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 16, 2020·8 cites·20 claims
3191US11705203B2Digital temperature compensation filteringSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
3291US10943917B2Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 9, 2021·8 cites·13 claims
3390US11063063B2Three-dimensional memory device containing plural work function word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 13, 2021·6 cites·15 claims
3489US9378832B1Method to recover cycling damage and improve long term data retentionSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·12 cites·24 claims
3587US11935586B2Memory device and method for computing-in-memory (CIM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·1 cites·20 claims
3687US9336891B2Look ahead read method for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted May 10, 2016·10 cites·17 claims
3785US10811110B1Method of reducing injection type of program disturb during program pre-charge in memory deviceSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 20, 2020·2 cites·20 claims
3884US2025321694A1Data sequencing circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3984US2025342870A1Method for computing-in-memory (cim)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4083US10249372B2Reducing hot electron injection type of read disturb in 3D memory device during signal switching transientsSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 2, 2019·6 cites·18 claims
4183US2025054537A1Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4282US10559370B2System and method for in-situ programming and read operation adjustments in a non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 11, 2020·5 cites·16 claims
4382US2025318098A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4482US2025362875A1Compute-in-memory devices and methods of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4582US2025362872A1Signed extension carry-look-ahead for accumulator with bit width differenceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4680US12373131B2Data sequencing circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
4780US12369292B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
4880US12100436B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
4980US2025063709A1Memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5078US2025349329A1Systems and methods for flexible bank addressing in digital computing-in-memory (dcim)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 90 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →