Inventor · disambiguated record
Willy Rachmady
Also filed as: RACHMADY WILLY
361 granted patents·81 pending applications·1,781 citations·filing 2005–2025
99Inventor score
Top patents by PatentIndex Score
442 records- 0199US11239236B2Forksheet transistor architecturesINTEL CORP·Filed 2020·Granted Feb 1, 2022·9 cites·24 claims
- 0299US8987794B2Non-planar gate all-around device and method of fabrication thereofRACHMADY WILLY·Filed 2011·Granted Mar 24, 2015·65 cites·29 claims
- 0398US11923410B2Transistor with isolation below source and drainINTEL CORP·Filed 2021·Granted Mar 5, 2024·4 cites·23 claims
- 0498US9129829B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2014·Granted Sep 8, 2015·62 cites·13 claims
- 0598US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0698US8753942B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2010·Granted Jun 17, 2014·144 cites·30 claims
- 0798US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0897US9859368B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2016·Granted Jan 2, 2018·11 cites·15 claims
- 0997US9484447B2Integration methods to fabricate internal spacers for nanowire devicesKIM SEIYON·Filed 2012·Granted Nov 1, 2016·35 cites·9 claims
- 1097US9252275B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2014·Granted Feb 2, 2016·20 cites·19 claims
- 1197US8901537B2Transistors with high concentration of boron doped germaniumMURTHY ANAND S·Filed 2010·Granted Dec 2, 2014·56 cites·25 claims
- 1297US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 1397US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 1497US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 1597US7851790B2Isolated Germanium nanowire on Silicon finINTEL CORP·Filed 2008·Granted Dec 14, 2010·43 cites·3 claims
- 1697US7838373B2Replacement spacers for MOSFET fringe capacitance reduction and processes of making sameINTEL CORP·Filed 2008·Granted Nov 23, 2010·52 cites·21 claims
- 1797US7494858B2Transistor with improved tip profile and method of manufacture thereofINTEL CORP·Filed 2005·Granted Feb 24, 2009·104 cites·15 claims
- 1896US11996411B2Stacked forksheet transistorsINTEL CORP·Filed 2020·Granted May 28, 2024·4 cites·21 claims
- 1996US11437283B2Backside contacts for semiconductor devicesINTEL CORP·Filed 2019·Granted Sep 6, 2022·12 cites·25 claims
- 2096US10038054B2Variable gate width for gate all-around transistorsINTEL CORP·Filed 2017·Granted Jul 31, 2018·14 cites·15 claims
- 2196US9627384B2Transistors with high concentration of boron doped germaniumINTEL CORP·Filed 2014·Granted Apr 18, 2017·12 cites·20 claims
- 2296US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 2396US8575653B2Non-planar quantum well device having interfacial layer and method of forming sameRACHMADY WILLY·Filed 2010·Granted Nov 5, 2013·21 cites·30 claims
- 2495US12107085B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 2595US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 2695US9590089B2Variable gate width for gate all-around transistorsRACHMADY WILLY·Filed 2011·Granted Mar 7, 2017·18 cites·16 claims
- 2795US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 2895US7821044B2Transistor with improved tip profile and method of manufacture thereofINTEL CORP·Filed 2008·Granted Oct 26, 2010·32 cites·34 claims
- 2994US11664377B2Forksheet transistor architecturesINTEL CORP·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 3094US11342227B2Stacked transistor structures with asymmetrical terminal interconnectsINTEL CORP·Filed 2020·Granted May 24, 2022·3 cites·20 claims
- 3194US10418487B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2015·Granted Sep 17, 2019·9 cites·16 claims
- 3294US9306068B2Stain compensation in transistorsINTEL CORP·Filed 2015·Granted Apr 5, 2016·7 cites·20 claims
- 3394US8441074B2Substrate fins with different heightsRACHMADY WILLY·Filed 2010·Granted May 14, 2013·21 cites·20 claims
- 3494US7875519B2Metal gate structure and method of manufacturing sameINTEL CORP·Filed 2008·Granted Jan 25, 2011·37 cites·16 claims
- 3594US7670894B2Selective high-k dielectric film deposition for semiconductor deviceINTEL CORP·Filed 2008·Granted Mar 2, 2010·20 cites·22 claims
- 3693US11387320B2Transistors with high concentration of germaniumINTEL CORP·Filed 2019·Granted Jul 12, 2022·3 cites·20 claims
- 3793US10249740B2Ge nano wire transistor with GaAs as the sacrificial layerINTEL CORP·Filed 2015·Granted Apr 2, 2019·7 cites·18 claims
- 3893US9595581B2Silicon and silicon germanium nanowire structuresINTEL CORP·Filed 2015·Granted Mar 14, 2017·7 cites·19 claims
- 3993US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 4093US8264048B2Multi-gate device having a T-shaped gate structureRACHMADY WILLY·Filed 2008·Granted Sep 11, 2012·29 cites·12 claims
- 4193US7435683B2Apparatus and method for selectively recessing spacers on multi-gate devicesINTEL CORP·Filed 2006·Granted Oct 14, 2008·23 cites·13 claims
- 4292US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 4392US10211208B2High-mobility semiconductor source/drain spacerINTEL CORP·Filed 2015·Granted Feb 19, 2019·7 cites·21 claims
- 4492US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 4592US9666492B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2015·Granted May 30, 2017·6 cites·17 claims
- 4692US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 4792US9029835B2Epitaxial film on nanoscale structureINTEL CORP·Filed 2012·Granted May 12, 2015·13 cites·19 claims
- 4892US8936976B2Conductivity improvements for III-V semiconductor devicesRADOSAVLJEVIC MARKO·Filed 2009·Granted Jan 20, 2015·16 cites·20 claims
- 4992US8633471B2Apparatus and methods for forming a modulation doped non-planar transistorPILLARISETTY RAVI·Filed 2011·Granted Jan 21, 2014·9 cites·18 claims
- 5092US7915642B2Apparatus and methods for forming a modulation doped non-planar transistorINTEL CORP·Filed 2008·Granted Mar 29, 2011·14 cites·7 claims
Showing the top 50 of 442 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →