Inventor · disambiguated record
Xiying Costa
Also filed as: COSTA XIYING · COSTA XIYING CHEN
38 granted patents·1 pending application·740 citations·filing 2010–2019
98Inventor score
Top patents by PatentIndex Score
39 records- 0199US8884357B2Vertical NAND and method of making thereof using sequential stack etching and landing padSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 11, 2014·106 cites·24 claims
- 0299US8878278B2Compact three dimensional vertical NAND and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·136 cites·24 claims
- 0398US10056399B2Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 21, 2018·24 cites·20 claims
- 0498US9460799B1Recovery of partially programmed block in non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 4, 2016·45 cites·20 claims
- 0597US8913431B1Pseudo block operation mode in 3D NANDSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 16, 2014·28 cites·38 claims
- 0696US9019775B2Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage currentCOSTA XIYING·Filed 2012·Granted Apr 28, 2015·37 cites·18 claims
- 0796US8867271B2Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory deviceLI HAIBO·Filed 2012·Granted Oct 21, 2014·32 cites·16 claims
- 0896US8488382B1Erase inhibit for 3D non-volatile memoryLI HAIBO·Filed 2011·Granted Jul 16, 2013·33 cites·22 claims
- 0995US9672917B1Stacked vertical memory array architectures, systems and methodsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·23 cites·14 claims
- 1095US9515080B2Vertical NAND and method of making thereof using sequential stack etching and landing padSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 6, 2016·20 cites·22 claims
- 1195US9099202B23D stacked non-volatile storage programming to conductive stateSANDISK TECHNOLOGIES INC·Filed 2012·Granted Aug 4, 2015·24 cites·22 claims
- 1295US8787094B2Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bitsCOSTA XIYING·Filed 2012·Granted Jul 22, 2014·24 cites·20 claims
- 1394US9330778B2Group word line erase and erase-verify methods for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted May 3, 2016·15 cites·21 claims
- 1494US9331090B2Compact three dimensional vertical NAND and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 3, 2016·15 cites·9 claims
- 1594US8824211B1Group word line erase and erase-verify methods for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 2, 2014·16 cites·20 claims
- 1693US8934292B2Balanced method for programming multi-layer cell memoriesCOSTA XIYING·Filed 2011·Granted Jan 13, 2015·23 cites·42 claims
- 1792US10388390B2Word line dependent pass voltages in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 20, 2019·6 cites·13 claims
- 1892US9142304B2Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage currentSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 22, 2015·11 cites·8 claims
- 1991US8885412B2Erase operation with controlled select gate voltage for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 11, 2014·18 cites·10 claims
- 2090US10355007B2Three-dimensional memory structure having a back gate electrodeSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 16, 2019·6 cites·18 claims
- 2190US8908435B2Erase operation with controlled select gate voltage for 3D non-volatile memoryLI HAIBO·Filed 2011·Granted Dec 9, 2014·16 cites·28 claims
- 2290US8649219B2Erase inhibit for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 11, 2014·12 cites·20 claims
- 2390US8551855B2Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the sameXU HUIWEN·Filed 2010·Granted Oct 8, 2013·11 cites·19 claims
- 2488US9240241B2Pseudo block operation mode in 3D NANDSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 19, 2016·8 cites·20 claims
- 2585US8737111B2Memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted May 27, 2014·7 cites·20 claims
- 2683US8923054B1Pseudo block operation mode in 3D NANDSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 30, 2014·7 cites·29 claims
- 2782US10573388B2Non-volatile storage system with adjustable select gates as a function of temperatureWESTERN DIGITAL TECH INC·Filed 2018·Granted Feb 25, 2020·6 cites·15 claims
- 2879US8879333B2Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bitsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 4, 2014·4 cites·20 claims
- 2978US8861280B2Erase for 3D non-volatile memory with sequential selection of word linesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 14, 2014·5 cites·30 claims
- 3075US9136022B2Selection of data for redundancy calculation by likely error rateSANDISK TECHNOLOGIES INC·Filed 2014·Granted Sep 15, 2015·4 cites·18 claims
- 3174US10283208B2Word line dependent pass voltages in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 7, 2019·2 cites·10 claims
- 3274US8908444B2Erase for 3D non-volatile memory with sequential selection of word linesSANDISK TECHNOLOGIES INC·Filed 2013·Granted Dec 9, 2014·4 cites·27 claims
- 3372US9047973B2Group word line erase and erase-verify methods for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 2, 2015·3 cites·23 claims
- 3470US8481396B2Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the sameXU HUIWEN·Filed 2010·Granted Jul 9, 2013·2 cites·17 claims
- 3564US8883589B2Counter doping compensation methods to improve diode performanceCOSTA XIYING·Filed 2010·Granted Nov 11, 2014·2 cites·47 claims
- 3663US8848430B2Step soft program for reversible resistivity-switching elementsCOSTA XIYING CHEN·Filed 2010·Granted Sep 30, 2014·4 cites·34 claims
- 3762US10049758B2Word line dependent pass voltages in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·1 cites·10 claims
- 3856US2013181181A1Miiim diode having lanthanum oxideSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 3947US9177673B2Selection of data for redundancy calculation by likely error rateSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 3, 2015·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →