Inventor · disambiguated record
Xuebin Li
Also filed as: LI XUEBIN
39 granted patents·16 pending applications·404 citations·filing 2009–2025
96Inventor score
Files withAPPLIED MATERIALS INC46HUZHOU JIN TAI CONDUCTOR TECH CO LTD2UNIV SHANDONG SCIENCE & TECH2YE ZHIYUAN2DE HEER WALT A1
Top patents by PatentIndex Score
55 records- 0198US9929055B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2016·Granted Mar 27, 2018·313 cites·20 claims
- 0297US9923081B1Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 20, 2018·23 cites·20 claims
- 0396US9530661B2Method of modifying epitaxial growth shape on source drain area of transistorAPPLIED MATERIALS INC·Filed 2015·Granted Dec 27, 2016·14 cites·17 claims
- 0493US10062598B2Thermal processing susceptorAPPLIED MATERIALS INC·Filed 2015·Granted Aug 28, 2018·7 cites·12 claims
- 0593US2025364306A1Thermal processing susceptorAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0691US11152479B2Semiconductor device, method of making a semiconductor device, and processing systemAPPLIED MATERIALS INC·Filed 2020·Granted Oct 19, 2021·3 cites·11 claims
- 0790US11195923B2Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2019·Granted Dec 7, 2021·5 cites·13 claims
- 0890US10930543B2Thermal processing susceptorAPPLIED MATERIALS INC·Filed 2018·Granted Feb 23, 2021·4 cites·17 claims
- 0990US9805942B2Method of modifying epitaxial growth shape on source drain area of transistorAPPLIED MATERIALS INC·Filed 2016·Granted Oct 31, 2017·5 cites·20 claims
- 1089US11152221B2Methods and apparatus for metal silicide depositionAPPLIED MATERIALS INC·Filed 2020·Granted Oct 19, 2021·2 cites·19 claims
- 1189US9530638B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 1288US12260974B1Stranded wire conductors and methods for manufacturing stranded wiresHUZHOU JIN TAI CONDUCTOR TECH CO LTD·Filed 2024·Granted Mar 25, 2025·1 cites·10 claims
- 1387US9966438B2Method of doped germanium formationAPPLIED MATERIALS INC·Filed 2017·Granted May 8, 2018·5 cites·19 claims
- 1486US12400904B2Thermal processing susceptorAPPLIED MATERIALS INC·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 1584US9881790B2Method to enhance growth rate for selective epitaxial growthAPPLIED MATERIALS INC·Filed 2016·Granted Jan 30, 2018·3 cites·20 claims
- 1682US9532401B2Susceptor support shaft with uniformity tuning lenses for EPI processAPPLIED MATERIALS INC·Filed 2014·Granted Dec 27, 2016·5 cites·17 claims
- 1780US10276688B2Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2018·Granted Apr 30, 2019·2 cites·18 claims
- 1879US2025263864A1Method and apparatus for low temperature selective epitaxy in a deep trenchAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1978US9460918B2Epitaxy of high tensile silicon alloy for tensile strain applicationsAPPLIED MATERIALS INC·Filed 2013·Granted Oct 4, 2016·3 cites·6 claims
- 2077US12297559B2Method and apparatus for low temperature selective epitaxy in a deep trenchAPPLIED MATERIALS INC·Filed 2022·Granted May 13, 2025·0 cites·22 claims
- 2175US11848226B2Thermal processing susceptorAPPLIED MATERIALS INC·Filed 2021·Granted Dec 19, 2023·0 cites·7 claims
- 2274US10128110B2Method to enhance growth rate for selective epitaxial growthAPPLIED MATERIALS INC·Filed 2018·Granted Nov 13, 2018·1 cites·19 claims
- 2374US2024387290A1Method of simultaneous silicidation on source and drain of nmos and pmos transistorsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2471US11615986B2Methods and apparatus for metal silicide depositionAPPLIED MATERIALS INC·Filed 2021·Granted Mar 28, 2023·0 cites·22 claims
- 2567US2014137801A1Epitaxial chamber with customizable flow injectionAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 2667US2018209043A1Epitaxial chamber with customizable flow injectionAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 2765US12444605B2Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrationsAPPLIED MATERIALS INC·Filed 2022·Granted Oct 14, 2025·0 cites·18 claims
- 2864US12062579B2Method of simultaneous silicidation on source and drain of NMOS and PMOS transistorsAPPLIED MATERIALS INC·Filed 2020·Granted Aug 13, 2024·0 cites·16 claims
- 2964US11901182B2Silicide film nucleationAPPLIED MATERIALS INC·Filed 2021·Granted Feb 13, 2024·0 cites·13 claims
- 3062US12494300B1High-temperature corrosion-resistant stranded conductors and methods for manufacturing the sameHUZHOU JIN TAI CONDUCTOR TECH CO LTD·Filed 2025·Granted Dec 9, 2025·0 cites·8 claims
- 3162US11081358B2Silicide film nucleationAPPLIED MATERIALS INC·Filed 2019·Granted Aug 3, 2021·0 cites·13 claims
- 3261US8460764B2Method and apparatus for producing ultra-thin graphitic layersDE HEER WALT A·Filed 2009·Granted Jun 11, 2013·3 cites·13 claims
- 3361US2025343030A1Processing chamber and method for integrated etching and depositionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3459US2022093749A1Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 3558US12019055B2Cyclic dynamic loading-confining pressure instantaneous unloading test device and its application methodUNIV SHANDONG SCIENCE & TECH·Filed 2022·Granted Jun 25, 2024·0 cites·10 claims
- 3656US12068155B2Anisotropic sige:b epitaxial film growth for gate all around transistorAPPLIED MATERIALS INC·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 3756US2024145242A1Method of blocking dielectric surfaces using blocking molecules to enable selective epi depositionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3854US2018230624A1Method and apparatus for low temperature selective epitaxy in a deep trenchAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 3953US10971366B2Methods for silicide depositionAPPLIED MATERIALS INC·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 4051US2020283896A1Methods for low temperature silicide formationAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 4150US8652945B2Epitaxy of high tensile silicon alloy for tensile strain applicationsYE ZHIYUAN·Filed 2011·Granted Feb 18, 2014·0 cites·16 claims
- 4249US9012328B2Carbon addition for low resistivity in situ doped silicon epitaxyYE ZHIYUAN·Filed 2011·Granted Apr 21, 2015·0 cites·15 claims
- 4348US11037838B2In-situ integrated chambersAPPLIED MATERIALS INC·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 4445US2015221730A1Carbon addition for low resistivity in situ doped silicon epitaxyAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 4544US10504723B2Method and apparatus for selective epitaxyAPPLIED MATERIALS INC·Filed 2017·Granted Dec 10, 2019·0 cites·12 claims
- 4644US9704708B2Halogenated dopant precursors for epitaxyAPPLIED MATERIALS INC·Filed 2015·Granted Jul 11, 2017·0 cites·20 claims
- 4742US11078791B2Grouting bolt-cable composite beam and supporting method for advanced support of fractured surrounding rock in deep coal minesUNIV SHANDONG SCIENCE & TECH·Filed 2020·Granted Aug 3, 2021·0 cites·4 claims
- 4842US9966271B2Method for modifying epitaxial growth shapeAPPLIED MATERIALS INC·Filed 2016·Granted May 8, 2018·0 cites·20 claims
- 4940US2015368829A1Substrate thermal control in an epi chamberAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 5039US2015368796A1Apparatus for gas injection to epitaxial chamberAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Xuebin Li files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →