Inventor · disambiguated record
Xuan Anh Tran
Also filed as: TRAN XUAN · TRAN XUAN ANH
24 granted patents·2 pending applications·86 citations·filing 2014–2023
94Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD14MICRON TECHNOLOGY INC5GLOBALFOUNDRIES US INC4GLOBALFOUNDRIES INC3
Top patents by PatentIndex Score
26 records- 0197US9659943B1Programmable integrated circuits and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 23, 2017·21 cites·20 claims
- 0296US9673388B2Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 6, 2017·16 cites·20 claims
- 0391US9871076B2Domain wall magnetic memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 16, 2018·7 cites·24 claims
- 0490US11355209B2Accessing a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 7, 2022·3 cites·35 claims
- 0590US10461173B1Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistorGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·7 cites·19 claims
- 0690US9768231B2High density multi-time programmable resistive memory devices and method of forming thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Sep 19, 2017·6 cites·19 claims
- 0788US9484530B2Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Nov 1, 2016·6 cites·12 claims
- 0885US11515205B2Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC productGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 29, 2022·5 cites·16 claims
- 0985US10163979B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 1084US9647035B2Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted May 9, 2017·4 cites·18 claims
- 1180US11694747B2Self-selecting memory cells configured to store more than one bit per memory cellMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 4, 2023·1 cites·19 claims
- 1275US9728721B2Resistive memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Aug 8, 2017·2 cites·22 claims
- 1375US9263665B1Two-bits per cell structure with spin torque transfer magnetic random access memory and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Feb 16, 2016·2 cites·18 claims
- 1471US10886287B2Multiple-time programmable (MTP) memory device with a wrap-around control gateGLOBALFOUNDRIES INC·Filed 2019·Granted Jan 5, 2021·1 cites·16 claims
- 1569US10186554B2Vertical random access memory with selectorsGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 22, 2019·1 cites·20 claims
- 1667US12453102B2Vertical memory devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 21, 2025·0 cites·9 claims
- 1766US11894078B2Accessing a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 6, 2024·0 cites·19 claims
- 1863US2023267996A1Self-Selecting Memory Cells Configured to Store More Than One Bit per Memory CellMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 1957US11367750B2Vertical memory devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 21, 2022·0 cites·18 claims
- 2056US10804323B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Oct 13, 2020·0 cites·14 claims
- 2154US10333065B2Resistive memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jun 25, 2019·0 cites·18 claims
- 2253US10651238B2High density multi-time programmable resistive memory devices and method of forming thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted May 12, 2020·0 cites·9 claims
- 2351US11568952B2Adjustable programming pulses for a multi-level cellMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 31, 2023·0 cites·25 claims
- 2451US9397146B2Vertical random access memory with selectorsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jul 19, 2016·0 cites·20 claims
- 2542US11094585B2Methods of forming a conductive contact structure to a top electrode of an embedded memory device on an IC product and a corresponding IC productGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 17, 2021·0 cites·13 claims
- 2636US2018366553A1Methods of forming an air gap adjacent a gate structure of a finfet device and the resulting devicesGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →