Inventor · disambiguated record
Yao-Tsung Huang
Also filed as: HUANG YAO T · HUANG YAO-TSUNG
19 granted patents·8 pending applications·2,520 citations·filing 1989–2024
94Inventor score
Files withMEDIATEK INC9IND TECH RES INST4UNITED MICROELECTRONICS CORP4HUANG YAO-TSUNG2TAIWAN SEMICONDUCTOR MFG CO LTD2
Top patents by PatentIndex Score
27 records- 0198US8618556B2FinFET design and method of fabricating sameWU CHENG-HSIEN·Filed 2011·Granted Dec 31, 2013·205 cites·18 claims
- 0298US8609518B2Re-growing source/drain regions from un-relaxed silicon layerWANN CLEMENT HSINGJEN·Filed 2011·Granted Dec 17, 2013·178 cites·13 claims
- 0397US8962400B2In-situ doping of arsenic for source and drain epitaxyTSAI JI-YIN·Filed 2011·Granted Feb 24, 2015·536 cites·21 claims
- 0497US8785285B2Semiconductor devices and methods of manufacture thereofTSAI JI-YIN·Filed 2012·Granted Jul 22, 2014·1.6k cites·20 claims
- 0587US7608522B2Method for fabricating a hybrid orientation substrateUNITED MICROELECTRONICS CORP·Filed 2007·Granted Oct 27, 2009·11 cites·10 claims
- 0685US11450756B2Manufacturing method of semiconductor chipMEDIATEK INC·Filed 2020·Granted Sep 20, 2022·1 cites·3 claims
- 0782US10790380B2Semiconductor chip and manufacturing method thereofMEDIATEK INC·Filed 2018·Granted Sep 29, 2020·2 cites·12 claims
- 0876US8866188B1Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 21, 2014·3 cites·20 claims
- 0975US12237401B2Semiconductor chipMEDIATEK INC·Filed 2022·Granted Feb 25, 2025·0 cites·11 claims
- 1060US7659189B2Method for forming fully silicided gate electrode in a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 9, 2010·2 cites·12 claims
- 1155US9034102B2Method of fabricating hybrid orientation substrate and structure of the sameHUANG YAO-TSUNG·Filed 2007·Granted May 19, 2015·1 cites·15 claims
- 1255US7682932B2Method for fabricating a hybrid orientation substrateUNITED MICROELECTRONICS CORP·Filed 2008·Granted Mar 23, 2010·0 cites·26 claims
- 1354US2024387347A1Semiconductor package structureMEDIATEK INC·Filed 2024·Application pending·0 cites
- 1453US2025112108A1Semiconductor package structureMEDIATEK INC·Filed 2024·Application pending·0 cites
- 1552US9508849B2Device having source/drain regions regrown from un-relaxed silicon layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 29, 2016·0 cites·20 claims
- 1652US5376623AMethod to enhance critical temperature of thallium-based superconductorsIND TECH RES INST·Filed 1993·Granted Dec 27, 1994·15 cites·10 claims
- 1750US7759202B2Method for forming semiconductor device with gates of different materialsUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jul 20, 2010·0 cites·22 claims
- 1850US2024186209A1Semiconductor package structureMEDIATEK INC·Filed 2023·Application pending·0 cites
- 1950US2023260977A1Semiconductor packagesMEDIATEK INC·Filed 2022·Application pending·0 cites
- 2049US2013279828A1BagHUANG YAO-TSUNG·Filed 2012·Application pending·0 cites
- 2149US2024096860A1Multi-die package on packageMEDIATEK INC·Filed 2023·Application pending·0 cites
- 2247US2008272435A1Semiconductor device and method of forming the sameLIN CHIEN-TING·Filed 2007·Application pending·0 cites
- 2346US9887290B2Silicon germanium source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·0 cites·19 claims
- 2434US2016197071A1Integrated circuit device and method for forming the sameMEDIATEK INC·Filed 2015·Application pending·0 cites
- 2532US5270295AProcess for preparing superconductors and compositions useful thereinIND TECH RES INST·Filed 1992·Granted Dec 14, 1993·4 cites·38 claims
- 2632US5071829AGel method for preparing high purity Bi-based 110K superconductor using oxalic acidIND TECH RES INST·Filed 1990·Granted Dec 10, 1991·5 cites·13 claims
- 2729US5004723APreparation of superconducting epitaxial film using the method of liquid-phase epitaxial growthIND TECH RES INST·Filed 1989·Granted Apr 2, 1991·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →