Method for fabricating a hybrid orientation substrate

Abstract

A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.

1. A method for fabricating a hybrid orientation substrate comprising steps of:
 providing a direct silicon bonding (DSB) wafer having a first substrate with a first crystalline orientation and a second substrate with a second crystalline orientation directly bonded thereon; 
 forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer; 
 performing an amorphization process to transform the first region of the second substrate into an amorphized region; and 
 performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and simultaneously to make the second region stressed by the first blocking layer. 
 
   
   
     2. The method of  claim 1 , wherein the first blocking layer comprises silicon oxide, silicon nitride, or silicon oxynitride. 
   
   
     3. The method of  claim 1 , wherein the amorphization process is performed by implanting dopants into the first region with the first blocking layer used as an implant mask. 
   
   
     4. The method of  claim 3 , wherein the dopants comprise Si, Ge, Ar, C, O, N, H, He, Kr, Xe, P, B, As, or a mixture thereof. 
   
   
     5. The method of  claim 3 , wherein the dopants are implanted to a depth beyond a bonded interface of the first substrate and the second substrate. 
   
   
     6. The method of  claim 1  further comprising a step of forming a second blocking layer on the first region and the first blocking layer before performing the annealing process. 
   
   
     7. The method of  claim 6 , wherein the second blocking layer is patterned to expose the first blocking layer. 
   
   
     8. The method of  claim 6 , wherein the first region is stressed by the second blocking layer. 
   
   
     9. The method of  claim 1 , wherein the first crystalline orientation is (100) crystalline orientation and the second crystalline orientation is (110) crystalline orientation. 
   
   
     10. The method of  claim 1 , wherein the first crystalline orientation is (110) crystalline orientation and the second crystalline orientation is (100) crystalline orientation.