Inventor · disambiguated record
Yauh-Ching Liu
Also filed as: LIU YAUH-CHING
65 granted patents·3,150 citations·filing 1990–2004
99Inventor score
Top patents by PatentIndex Score
65 records- 0198US5013680AProcess for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithographyMICRON TECHNOLOGY INC·Filed 1990·Granted May 7, 1991·461 cites·21 claims
- 0296US6004880AMethod of single step damascene process for deposition and global planarizationLSI LOGIC CORP·Filed 1998·Granted Dec 21, 1999·224 cites·14 claims
- 0396US5053351AMethod of making stacked E-cell capacitor DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 1, 1991·150 cites·18 claims
- 0495US5122476ADouble DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 16, 1992·106 cites·6 claims
- 0595US5061650AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 29, 1991·142 cites·22 claims
- 0694US6090239AMethod of single step damascene process for deposition and global planarizationLSI LOGIC CORP·Filed 1999·Granted Jul 18, 2000·144 cites·8 claims
- 0794US5236860ALateral extension stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 17, 1993·107 cites·31 claims
- 0892US5170233AMethod for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 8, 1992·94 cites·29 claims
- 0991US6365452B1DRAM cell having a vertical transistor and a capacitor formed on the sidewalls of a trench isolationLSI LOGIC CORP·Filed 2000·Granted Apr 2, 2002·59 cites·21 claims
- 1091US5082797AMethod of making stacked textured container capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 21, 1992·99 cites·15 claims
- 1189US5057888ADouble DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 15, 1991·56 cites·16 claims
- 1289US5049517AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1990·Granted Sep 17, 1991·85 cites·27 claims
- 1388US5973344AEEPROM transistor for a DRAMMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 26, 1999·44 cites·14 claims
- 1487US5084405AProcess to fabricate a double ring stacked cell structureMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 28, 1992·79 cites·27 claims
- 1586US6090661AFormation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewallsLSI LOGIC CORP·Filed 1998·Granted Jul 18, 2000·73 cites·14 claims
- 1685US5723375AMethod of making EEPROM transistor for a DRAMMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 3, 1998·36 cites·12 claims
- 1784US5688700AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 18, 1997·54 cites·22 claims
- 1884US5371701AStacked delta cell capacitorMICRON TECHNOLOGY INC·Filed 1994·Granted Dec 6, 1994·43 cites·9 claims
- 1984US4981810AProcess for creating field effect transistors having reduced-slope, staircase-profile sidewall spacersMICRON TECHNOLOGY INC·Filed 1990·Granted Jan 1, 1991·58 cites·6 claims
- 2083US6166403AIntegrated circuit having embedded memory with electromagnetic shieldLSI LOGIC CORP·Filed 1997·Granted Dec 26, 2000·72 cites·14 claims
- 2182US6566171B1Fuse construction for integrated circuit structure having low dielectric constant dielectric materialLSI LOGIC CORP·Filed 2001·Granted May 20, 2003·30 cites·20 claims
- 2282US6472715B1Reduced soft error rate (SER) construction for integrated circuit structuresLSI LOGIC CORP·Filed 2000·Granted Oct 29, 2002·34 cites·13 claims
- 2382US5262343ADRAM stacked capacitor fabrication processMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 16, 1993·54 cites·19 claims
- 2479US6391755B2Method of making EEPROM transistor for a DRAMMICRON TECHNOLOGY INC·Filed 1999·Granted May 21, 2002·28 cites·22 claims
- 2579US5081559AEnclosed ferroelectric stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 14, 1992·43 cites·25 claims
- 2678US6924522B2EEPROM transistor for a DRAMMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 2, 2005·13 cites·19 claims
- 2777US5905280ACapacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structuresMICRON TECHNOLOGY INC·Filed 1997·Granted May 18, 1999·38 cites·12 claims
- 2877US5084406AMethod for forming low resistance DRAM digit-lineMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 28, 1992·56 cites·24 claims
- 2976US6177699B1DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolationLSI LOGIC CORP·Filed 1998·Granted Jan 23, 2001·42 cites·21 claims
- 3075US5953614AProcess for forming self-aligned metal silicide contacts for MOS structure using single silicide-forming stepLSI LOGIC CORP·Filed 1997·Granted Sep 14, 1999·48 cites·23 claims
- 3173US6794698B1Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewallsLSI LOGIC CORP·Filed 2000·Granted Sep 21, 2004·18 cites·16 claims
- 3273US6175129B1Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 16, 2001·31 cites·12 claims
- 3372US7485961B2Approach to avoid buckling in BPSG by using an intermediate barrier layerMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 3, 2009·12 cites·18 claims
- 3472US6495426B1Method for simultaneous formation of integrated capacitor and fuseLSI LOGIC CORP·Filed 2001·Granted Dec 17, 2002·16 cites·16 claims
- 3572US6442061B1Single channel four transistor SRAMLSI LOGIC CORP·Filed 2001·Granted Aug 27, 2002·15 cites·12 claims
- 3672US5100825AMethod of making stacked surrounding reintrant wall capacitorMICRON TECHNOLOGY INC·Filed 1990·Granted Mar 31, 1992·35 cites·24 claims
- 3771US6806551B2Fuse construction for integrated circuit structure having low dielectric constant dielectric materialLSI LOGIC CORP·Filed 2003·Granted Oct 19, 2004·15 cites·4 claims
- 3869US6566730B1Laser-breakable fuse link with alignment and break point promotion structuresLSI LOGIC CORP·Filed 2000·Granted May 20, 2003·15 cites·28 claims
- 3969US5108943AMushroom double stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Apr 28, 1992·28 cites·11 claims
- 4068US6218276B1Silicide encapsulation of polysilicon gate and interconnectLSI LOGIC CORP·Filed 1997·Granted Apr 17, 2001·28 cites·26 claims
- 4167US6413848B1Self-aligned fuse structure and method with dual-thickness dielectricLSI LOGIC CORP·Filed 2000·Granted Jul 2, 2002·14 cites·9 claims
- 4264US6627968B2Integrated capacitor and fuseLSI LOGIC CORP·Filed 2002·Granted Sep 30, 2003·10 cites·3 claims
- 4364US5155057AStacked v-cell capacitor using a disposable composite dielectric on top of a digit lineMICRON TECHNOLOGY INC·Filed 1990·Granted Oct 13, 1992·23 cites·12 claims
- 4463US5139974ASemiconductor manufacturing process for decreasing the optical refelctivity of a metal layerMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 18, 1992·36 cites·13 claims
- 4562US6259146B1Self-aligned fuse structure and method with heat sinkLSI LOGIC CORP·Filed 1998·Granted Jul 10, 2001·26 cites·22 claims
- 4662US5196364AMethod of making a stacked capacitor dram cellMICRON TECHNOLOGY INC·Filed 1990·Granted Mar 23, 1993·22 cites·13 claims
- 4761US5372974AApproach to avoid buckling in BPSG by using an intermediate barrier layerMICRON SEMICONDUCTOR INC·Filed 1993·Granted Dec 13, 1994·30 cites·18 claims
- 4861US5321648AStacked V-cell capacitor using a disposable outer digit line spacerMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 14, 1994·17 cites·5 claims
- 4960US6061264ASelf-aligned fuse structure and method with anti-reflective coatingLSI LOGIC CORP·Filed 1998·Granted May 9, 2000·18 cites·16 claims
- 5059US6037233AMetal-encapsulated polysilicon gate and interconnectLSI LOGIC CORP·Filed 1998·Granted Mar 14, 2000·18 cites·13 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →