Inventor · disambiguated record
Yasushi Nagadomi
Also filed as: NAGADOMI YASUSHI
32 granted patents·9 pending applications·221 citations·filing 2007–2025
97Inventor score
Top patents by PatentIndex Score
41 records- 0197US7778078B2Memory system and control method thereofTOSHIBA KK·Filed 2008·Granted Aug 17, 2010·60 cites·20 claims
- 0296US8649225B2Non-volatile semiconductor memory device and memory systemNAGADOMI YASUSHI·Filed 2012·Granted Feb 11, 2014·21 cites·14 claims
- 0394US9330772B2Non-volatile semiconductor memory device and memory systemTOSHIBA KK·Filed 2015·Granted May 3, 2016·10 cites·33 claims
- 0494US9076536B2Non-volatile semiconductor memory device and memory systemTOSHIBA KK·Filed 2013·Granted Jul 7, 2015·11 cites·10 claims
- 0593US11749352B2Non-volatile semiconductor memory device and memory systemKIOXIA CORP·Filed 2021·Granted Sep 5, 2023·2 cites·11 claims
- 0692US8078923B2Semiconductor memory device with error correctionNAGADOMI YASUSHI·Filed 2008·Granted Dec 13, 2011·27 cites·11 claims
- 0791US8947933B2Nonvolatile semiconductor memory apparatusTOSHIBA KK·Filed 2013·Granted Feb 3, 2015·10 cites·16 claims
- 0890US8732553B2Memory system and control method thereofNAGADOMI YASUSHI·Filed 2011·Granted May 20, 2014·15 cites·20 claims
- 0990US8156393B2Memory systemNAGADOMI YASUSHI·Filed 2007·Granted Apr 10, 2012·19 cites·18 claims
- 1089US10546643B2Non-volatile semiconductor memory device in which memory cell threshold voltages are controlled in performing write operationsTOSHIBA MEMORY CORP·Filed 2019·Granted Jan 28, 2020·4 cites·18 claims
- 1188US8255762B2Semiconductor memory device with error correctionNAGADOMI YASUSHI·Filed 2011·Granted Aug 28, 2012·10 cites·8 claims
- 1286US12242723B2Memory system with selective access to first and second memoriesKIOXIA CORP·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1386US2025259682A1Non-volatile semiconductor memory device and memory systemKIOXIA CORP·Filed 2025·Application pending·0 cites
- 1484US8582369B2Nonvolatile semiconductor memory deviceNAGADOMI YASUSHI·Filed 2012·Granted Nov 12, 2013·8 cites·19 claims
- 1582US12272405B2Non-volatile semiconductor memory device and memory systemKIOXIA CORP·Filed 2023·Granted Apr 8, 2025·0 cites·15 claims
- 1681US11836347B2Memory system with selective access to first and second memoriesKIOXIA CORP·Filed 2022·Granted Dec 5, 2023·0 cites·11 claims
- 1780US2025165141A1Memory system with selective access to first and second memoriesKIOXIA CORP·Filed 2025·Application pending·0 cites
- 1879US8364884B2Memory system with a memory controller controlling parallelism of driving memoriesTOSHIBA KK·Filed 2009·Granted Jan 29, 2013·9 cites·18 claims
- 1978US9583200B2Non-volatile semiconductor memory device and memory system in which write operation is resumed after being suspended for an interrupt operationTOSHIBA KK·Filed 2016·Granted Feb 28, 2017·2 cites·19 claims
- 2078US8595410B2Memory system and bus switchNAGADOMI YASUSHI·Filed 2009·Granted Nov 26, 2013·4 cites·9 claims
- 2176US9075740B2Memory systemTOSHIBA KK·Filed 2014·Granted Jul 7, 2015·3 cites·10 claims
- 2275US11494077B2Memory system with selective access to first and second memoriesKIOXIA CORP·Filed 2021·Granted Nov 8, 2022·0 cites·4 claims
- 2372US10956039B2Memory system with selective access to first and second memoriesTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 23, 2021·0 cites·4 claims
- 2466US10474360B2Memory system with selective access to first and second memoriesTOSHIBA MEMORY CORP·Filed 2018·Granted Nov 12, 2019·0 cites·7 claims
- 2562US9280461B2Memory system with selective access to first and second memoriesTOSHIBA KK·Filed 2014·Granted Mar 8, 2016·0 cites·6 claims
- 2661US11011235B2Non-volatile semiconductor memory device in which erase and write operations are sequentially performed to control voltage thresholds of memory cellsTOSHIBA MEMORY CORP·Filed 2019·Granted May 18, 2021·0 cites·19 claims
- 2761US8832362B2Memory system controlling load capacityTOSHIBA KK·Filed 2013·Granted Sep 9, 2014·0 cites·7 claims
- 2861US8103920B2Memory system configured by using a nonvolatile semiconductor memoryNAGADOMI YASUSHI·Filed 2009·Granted Jan 24, 2012·4 cites·10 claims
- 2961US2016147455A1Memory system with selective access to first and second memoriesTOSHIBA KK·Filed 2016·Application pending·0 cites
- 3057US10176877B2Non-volatile semiconductor memory device and memory systemTOSHIBA MEMORY CORP·Filed 2018·Granted Jan 8, 2019·0 cites·17 claims
- 3156USRE47946EMethod for determining the exhaustion level of semiconductor memoryTOSHIBA MEMORY CORP·Filed 2007·Granted Apr 14, 2020·2 cites·38 claims
- 3255US9947411B2Memory system including a memory chip configured to receive an erase suspend command and a program suspend command from a controller chipTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 17, 2018·0 cites·10 claims
- 3355US9502116B2Nonvolatile semiconductor memory apparatusTOSHIBA KK·Filed 2014·Granted Nov 22, 2016·0 cites·20 claims
- 3454US2010161881A1Memory systemTOSHIBA KK·Filed 2009·Application pending·0 cites
- 3552US2012179942A1Memory systemNAGADOMI YASUSHI·Filed 2012·Application pending·0 cites
- 3650US8484432B2Memory systemHATSUDA KOSUKE·Filed 2009·Granted Jul 9, 2013·0 cites·14 claims
- 3745US8885417B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2013·Granted Nov 11, 2014·0 cites·14 claims
- 3838US2015070993A1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3936US2013258776A1Non-volatile semiconductor memory device and method of reading data therefromNAGADOMI YASUSHI·Filed 2012·Application pending·0 cites
- 4035US2012320697A1Non-volatile semiconductor memory deviceNAGADOMI YASUSHI·Filed 2012·Application pending·0 cites
- 4132US2016365154A1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →