Inventor · disambiguated record
Yan Ye
Also filed as: YE YAN · Ye yan-qiang
118 granted patents·32 pending applications·6,576 citations·filing 1993–2024
99Inventor score
Top patents by PatentIndex Score
150 records- 0198US8012794B2Capping layers for metal oxynitride TFTSAPPLIED MATERIALS INC·Filed 2009·Granted Sep 6, 2011·51 cites·17 claims
- 0298US7955986B2Capacitively coupled plasma reactor with magnetic plasma controlAPPLIED MATERIALS INC·Filed 2006·Granted Jun 7, 2011·70 cites·13 claims
- 0398US6586886B1Gas distribution plate electrode for a plasma reactorAPPLIED MATERIALS INC·Filed 2001·Granted Jul 1, 2003·115 cites·46 claims
- 0498US6348126B1Externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Feb 19, 2002·121 cites·31 claims
- 0598US6080529AMethod of etching patterned layers useful as masking during subsequent etching or for damascene structuresAPPLIED MATERIALS INC·Filed 1998·Granted Jun 27, 2000·551 cites·9 claims
- 0697US8349669B2Thin film transistors using multiple active channel layersAPPLIED MATERIALS INC·Filed 2012·Granted Jan 8, 2013·24 cites·15 claims
- 0797US8258511B2Thin film transistors using multiple active channel layersYE YAN·Filed 2009·Granted Sep 4, 2012·36 cites·22 claims
- 0897US7220937B2Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contaminationAPPLIED MATERIALS INC·Filed 2004·Granted May 22, 2007·94 cites·54 claims
- 0997US6939434B2Externally excited torroidal plasma source with magnetic control of ion distributionAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·72 cites·48 claims
- 1097US6853141B2Capacitively coupled plasma reactor with magnetic plasma controlFiled 2002·Granted Feb 8, 2005·140 cites·30 claims
- 1197US6551446B1Externally excited torroidal plasma source with a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·96 cites·9 claims
- 1297US6547977B1Method for etching low k dielectricsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 15, 2003·320 cites·32 claims
- 1397US6410449B1Method of processing a workpiece using an externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Jun 25, 2002·88 cites·8 claims
- 1497US6312554B1Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamberAPPLIED MATERIALS INC·Filed 1996·Granted Nov 6, 2001·206 cites·18 claims
- 1596US8435843B2Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistorsYE YAN·Filed 2012·Granted May 7, 2013·19 cites·20 claims
- 1696US8294148B2Thin film transistors using thin film semiconductor materialsYE YAN·Filed 2011·Granted Oct 23, 2012·21 cites·13 claims
- 1796US8101949B2Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistorsYE YAN·Filed 2009·Granted Jan 24, 2012·28 cites·17 claims
- 1896US7927713B2Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gasesAPPLIED MATERIALS INC·Filed 2007·Granted Apr 19, 2011·30 cites·16 claims
- 1996US7030335B2Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppressionAPPLIED MATERIALS INC·Filed 2001·Granted Apr 18, 2006·72 cites·125 claims
- 2096US6894245B2Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppressionAPPLIED MATERIALS INC·Filed 2001·Granted May 17, 2005·108 cites·31 claims
- 2196US6458516B1Method of etching dielectric layers using a removable hardmaskAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·113 cites·23 claims
- 2296US6352049B1Plasma assisted processing chamber with separate control of species densityAPPLIED MATERIALS INC·Filed 1998·Granted Mar 5, 2002·498 cites·24 claims
- 2396US6331380B1Method of pattern etching a low K dielectric layerAPPLIED MATERIALS INC·Filed 2000·Granted Dec 18, 2001·159 cites·44 claims
- 2496US5756400AMethod and apparatus for cleaning by-products from plasma chamber surfacesAPPLIED MATERIALS INC·Filed 1995·Granted May 26, 1998·407 cites·13 claims
- 2595US8809132B2Capping layers for metal oxynitride TFTsYE YAN·Filed 2011·Granted Aug 19, 2014·14 cites·17 claims
- 2695US7994508B2Thin film transistors using thin film semiconductor materialsAPPLIED MATERIALS INC·Filed 2008·Granted Aug 9, 2011·32 cites·16 claims
- 2795US6494986B1Externally excited multiple torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Dec 17, 2002·65 cites·32 claims
- 2895US6468388B1Reactor chamber for an externally excited torroidal plasma source with a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Oct 22, 2002·66 cites·21 claims
- 2995US6453842B1Externally excited torroidal plasma source using a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·62 cites·11 claims
- 3095US6352081B1Method of cleaning a semiconductor device processing chamber after a copper etch processAPPLIED MATERIALS INC·Filed 1999·Granted Mar 5, 2002·252 cites·15 claims
- 3195US6143476AMethod for high temperature etching of patterned layers using an organic mask stackAPPLIED MATERIALS INC·Filed 1997·Granted Nov 7, 2000·186 cites·37 claims
- 3294US5710486AInductively and multi-capacitively coupled plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Jan 20, 1998·139 cites·31 claims
- 3393US8143093B2Process to make metal oxide thin film transistor array with etch stopping layerYE YAN·Filed 2009·Granted Mar 27, 2012·22 cites·17 claims
- 3493US6623595B1Wavy and roughened dome in plasma processing reactorAPPLIED MATERIALS INC·Filed 2000·Granted Sep 23, 2003·47 cites·11 claims
- 3593US6270687B1RF plasma methodAPPLIED MATERIALS INC·Filed 2000·Granted Aug 7, 2001·42 cites·28 claims
- 3692US7988470B2Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etchAPPLIED MATERIALS INC·Filed 2010·Granted Aug 2, 2011·13 cites·20 claims
- 3792US7879698B2Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductorAPPLIED MATERIALS INC·Filed 2009·Granted Feb 1, 2011·22 cites·20 claims
- 3892US6071372ARF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber wallsAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·69 cites·49 claims
- 3991US7585384B2Apparatus and method to confine plasma and reduce flow resistance in a plasma reactorAPPLIED MATERIALS INC·Filed 2008·Granted Sep 8, 2009·10 cites·11 claims
- 4091US7300597B2Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric materialAPPLIED MATERIALS INC·Filed 2006·Granted Nov 27, 2007·18 cites·23 claims
- 4191US7221553B2Substrate support having heat transfer systemAPPLIED MATERIALS INC·Filed 2003·Granted May 22, 2007·49 cites·23 claims
- 4290US8398826B2Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gasesYE YAN·Filed 2011·Granted Mar 19, 2013·7 cites·18 claims
- 4390US7588668B2Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillersAPPLIED MATERIALS INC·Filed 2006·Granted Sep 15, 2009·10 cites·20 claims
- 4490US7132618B2MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppressionAPPLIED MATERIALS INC·Filed 2003·Granted Nov 7, 2006·43 cites·35 claims
- 4590US7094316B1Externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Aug 22, 2006·35 cites·31 claims
- 4690US6921727B2Method for modifying dielectric characteristics of dielectric layersAPPLIED MATERIALS INC·Filed 2003·Granted Jul 26, 2005·61 cites·35 claims
- 4790US5456796AControl of particle generation within a reaction chamberAPPLIED MATERIALS INC·Filed 1993·Granted Oct 10, 1995·68 cites·14 claims
- 4889US7186943B2MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppressionAPPLIED MATERIALS INC·Filed 2005·Granted Mar 6, 2007·12 cites·20 claims
- 4989US5900062ALift pin for dechucking substratesAPPLIED MATERIALS INC·Filed 1995·Granted May 4, 1999·102 cites·39 claims
- 5088US8279577B2Substrate support having fluid channelNGUYEN ANDREW·Filed 2010·Granted Oct 2, 2012·8 cites·32 claims
Showing the top 50 of 150 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →