Inventor · disambiguated record
Yeong-Kwan Kim
Also filed as: KIM YEONG-KWAN
18 granted patents·7 pending applications·5,124 citations·filing 1998–2016
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD17APPLIED MATERIALS INC2QIMONDA AG1SAMSUNG ELECTRONICS CO INC1VEECO ALD INC1
Top patents by PatentIndex Score
25 records- 0199US6468924B2Methods of forming thin films by atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 22, 2002·930 cites·29 claims
- 0299US6391803B1Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilaneSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 21, 2002·964 cites·28 claims
- 0399US6270572B1Method for manufacturing thin film using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 7, 2001·1.1k cites·14 claims
- 0498US6509601B1Semiconductor memory device having capacitor protection layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 21, 2003·231 cites·13 claims
- 0598US6335240B1Capacitor for a semiconductor device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 1, 2002·468 cites·3 claims
- 0698US6207487B1Method for forming dielectric film of capacitor having different thicknesses partlySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 27, 2001·426 cites·16 claims
- 0798US6144060AIntegrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperatureSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 7, 2000·457 cites·17 claims
- 0897US6576053B1Method of forming thin film using atomic layer deposition methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 10, 2003·297 cites·32 claims
- 0995US7547952B2Method for hafnium nitride depositionAPPLIED MATERIALS INC·Filed 2006·Granted Jun 16, 2009·37 cites·15 claims
- 1095US6828218B2Method of forming a thin film using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 7, 2004·96 cites·40 claims
- 1193US6489214B2Method for forming a capacitor of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·56 cites·20 claims
- 1285US6570253B1Multi-layer film for a thin film structure and a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 27, 2003·30 cites·13 claims
- 1364US6833310B2Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 21, 2004·7 cites·20 claims
- 1463US6162501AMethod for manufacturing thin films of multi-element group oxide or nitrideSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 19, 2000·66 cites·24 claims
- 1553US6828616B2Integrated circuit devices that utilize doped Poly-Si1−xGex conductive plugs as interconnectsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 7, 2004·5 cites·5 claims
- 1650US7052918B2Multi-layer film for thin film structure, capacitor using the same and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 30, 2006·2 cites·10 claims
- 1746US2003003230A1Method for manufacturing thin filmFiled 2002·Application pending·0 cites
- 1846US2017107614A1Multi-Step Atomic Layer Deposition Process for Silicon Nitride Film FormationVEECO ALD INC·Filed 2016·Application pending·0 cites
- 1945US7544607B2Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 9, 2009·0 cites·16 claims
- 2041US2004198069A1Method for hafnium nitride depositionAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2139US7316954B2Methods of fabricating integrated circuit devices that utilize doped poly-Si1−xGex conductive plugs as interconnectsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 8, 2008·0 cites·27 claims
- 2238US2007210367A1Storage capacitor and method for producing such a storage capacitorQIMONDA AG·Filed 2006·Application pending·0 cites
- 2337US2003066483A1Atomic layer deposition apparatus and method for operating the sameSAMSUNG ELECTRONICS CO INC·Filed 2002·Application pending·0 cites
- 2433US2002195683A1Semiconductor device and method for manufacturing the sameFiled 2000·Application pending·0 cites
- 2530US2002048635A1Method for manufacturing thin filmFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →