Inventor · disambiguated record
Yeur-Luen Tu
Also filed as: TU YEUR-LUEN
246 granted patents·20 pending applications·2,933 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD174TAIWAN SEMICONDUCTOR MFG53WORLDWIDE SEMICONDUCTOR MANUFA8VANGUARD INT SEMICONDUCT CORP7WORLDWIDE SEMICONDUCTOR MFG4
Top patents by PatentIndex Score
266 records- 0199US9711555B2Dual facing BSI image sensors with wafer level stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 18, 2017·31 cites·20 claims
- 0299US9437572B2Conductive pad structure for hybrid bonding and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 6, 2016·227 cites·20 claims
- 0399US9257399B23D integrated circuit and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 9, 2016·232 cites·19 claims
- 0498US11189515B2Method for alignment, process tool and method for wafer-level alignmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·5 cites·20 claims
- 0598US9142517B2Hybrid bonding mechanisms for semiconductor wafersTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 22, 2015·247 cites·17 claims
- 0697US9960129B2Hybrid bonding mechanisms for semiconductor wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·22 cites·17 claims
- 0797US8053856B1Backside illuminated sensor processingTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·26 cites·19 claims
- 0897US6362012B1Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 26, 2002·138 cites·23 claims
- 0997US6271084B1Method of fabricating a metal-insulator-metal (MIM), capacitor structure using a damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 7, 2001·169 cites·24 claims
- 1096US10790189B23D integrated circuit and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·9 cites·20 claims
- 1196US9899441B1Deep trench isolation (DTI) structure with a tri-layer passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·17 cites·20 claims
- 1296US9793243B2Buffer layer(s) on a stacked structure having a viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 17, 2017·17 cites·20 claims
- 1396US9704904B2Deep trench isolation structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·22 cites·20 claims
- 1496US9490158B2Bond chuck, methods of bonding, and tool including bond chuckTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·15 cites·20 claims
- 1596US8816358B1Plasmonic nanostructures for organic image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 26, 2014·30 cites·20 claims
- 1696US6492245B1Method of forming air gap isolation between a bit line contact structure and a capacitor under bit line structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 10, 2002·119 cites·19 claims
- 1795US11495489B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·3 cites·20 claims
- 1895US10658410B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 1995US9331032B2Hybrid bonding and apparatus for performing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·24 cites·20 claims
- 2094US10553474B1Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·6 cites·20 claims
- 2194US9576827B2Apparatus and method for wafer level bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·15 cites·20 claims
- 2293US11676969B2Semiconductor-on-insulator wafer having a composite insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
- 2393US11545513B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·2 cites·20 claims
- 2493US10569520B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 25, 2020·7 cites·20 claims
- 2593US10319768B2Image sensor scheme for optical and electrical improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·6 cites·20 claims
- 2693US9978650B2Transistor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·9 cites·19 claims
- 2793US9659981B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·9 cites·20 claims
- 2893US9281331B2High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 8, 2016·16 cites·12 claims
- 2993US8628990B1Image device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 14, 2014·9 cites·19 claims
- 3093US6566250B1Method for forming a self aligned capping layerTAIWANT SEMICONDUCTOR MFG CO L·Filed 2002·Granted May 20, 2003·110 cites·20 claims
- 3192US11037978B2Dual facing BSI image sensors with wafer level stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 3292US10163949B2Image device having multi-layered refractive layer on back surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·6 cites·20 claims
- 3392US10147756B2Deep trench isolation structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 4, 2018·7 cites·20 claims
- 3492US9917121B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·6 cites·20 claims
- 3592US9799702B2Deep trench isolation structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·8 cites·20 claims
- 3692US9653507B2Deep trench isolation shrinkage method for enhanced device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·7 cites·21 claims
- 3792US9040385B2Mechanisms for cleaning substrate surface for hybrid bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 26, 2015·24 cites·20 claims
- 3891US9508769B1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 29, 2016·8 cites·20 claims
- 3991US8610229B2Sidewall for backside illuminated image sensor metal grid and method of manufacturing sameHSU HUNG-WEN·Filed 2011·Granted Dec 17, 2013·19 cites·20 claims
- 4091US6017614APlasma-enhanced chemical vapor deposited SIO2 /SI3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jan 25, 2000·70 cites·4 claims
- 4191US2025357123A1Apparatus and method for wafer bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4290US10510723B2Buffer layer(s) on a stacked structure having a viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·5 cites·20 claims
- 4390US10468486B2SOI substrate, semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·5 cites·20 claims
- 4490US10453757B2Transistor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 22, 2019·5 cites·15 claims
- 4590US10155369B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·5 cites·7 claims
- 4690US9905600B1Image sensor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 4790US9871095B2Stacked capacitor with enhanced capacitance and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·6 cites·20 claims
- 4890US9673239B1Image sensor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·5 cites·18 claims
- 4990US8853811B2Image sensor trench isolation with conformal dopingLAI CHIH-YU·Filed 2011·Granted Oct 7, 2014·10 cites·20 claims
- 5090US6486529B2Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 26, 2002·56 cites·22 claims
Showing the top 50 of 266 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →