Inventor · disambiguated record
Yihwan Kim
Also filed as: KIM YIHWAN
57 granted patents·25 pending applications·1,143 citations·filing 2001–2025
98Inventor score
Top patents by PatentIndex Score
82 records- 0198US8029620B2Methods of forming carbon-containing silicon epitaxial layersAPPLIED MATERIALS INC·Filed 2007·Granted Oct 4, 2011·95 cites·15 claims
- 0298US7494545B2Epitaxial deposition process and apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Feb 24, 2009·246 cites·10 claims
- 0397US7897495B2Formation of epitaxial layer containing silicon and carbonAPPLIED MATERIALS INC·Filed 2006·Granted Mar 1, 2011·126 cites·19 claims
- 0497US7741200B2Formation and treatment of epitaxial layer containing silicon and carbonAPPLIED MATERIALS INC·Filed 2007·Granted Jun 22, 2010·102 cites·22 claims
- 0597US7132338B2Methods to fabricate MOSFET devices using selective deposition processAPPLIED MATERIALS INC·Filed 2004·Granted Nov 7, 2006·149 cites·21 claims
- 0696US9530661B2Method of modifying epitaxial growth shape on source drain area of transistorAPPLIED MATERIALS INC·Filed 2015·Granted Dec 27, 2016·14 cites·17 claims
- 0796US7166528B2Methods of selective deposition of heavily doped epitaxial SiGeAPPLIED MATERIALS INC·Filed 2003·Granted Jan 23, 2007·90 cites·45 claims
- 0895US7682940B2Use of Cl2 and/or HCl during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2005·Granted Mar 23, 2010·32 cites·37 claims
- 0994US9673277B2Methods and apparatus for forming horizontal gate all around device structuresAPPLIED MATERIALS INC·Filed 2015·Granted Jun 6, 2017·13 cites·19 claims
- 1094US7521365B2Selective epitaxy process with alternating gas supplyAPPLIED MATERIALS INC·Filed 2006·Granted Apr 21, 2009·19 cites·10 claims
- 1193US7572715B2Selective epitaxy process with alternating gas supplyAPPLIED MATERIALS INC·Filed 2007·Granted Aug 11, 2009·16 cites·26 claims
- 1293US7312128B2Selective epitaxy process with alternating gas supplyAPPLIED MATERIALS INC·Filed 2004·Granted Dec 25, 2007·47 cites·45 claims
- 1391US7651948B2Pre-cleaning of substrates in epitaxy chambersAPPLIED MATERIALS INC·Filed 2006·Granted Jan 26, 2010·18 cites·20 claims
- 1490US9805942B2Method of modifying epitaxial growth shape on source drain area of transistorAPPLIED MATERIALS INC·Filed 2016·Granted Oct 31, 2017·5 cites·20 claims
- 1590US8652951B2Selective epitaxial germanium growth on silicon-trench fill and in situ dopingAPPLIED MATERIALS INC·Filed 2013·Granted Feb 18, 2014·11 cites·15 claims
- 1690US7737007B2Methods to fabricate MOSFET devices using a selective deposition processAPPLIED MATERIALS INC·Filed 2008·Granted Jun 15, 2010·12 cites·16 claims
- 1790US7517775B2Methods of selective deposition of heavily doped epitaxial SiGeAPPLIED MATERIALS INC·Filed 2006·Granted Apr 14, 2009·11 cites·15 claims
- 1889US7960256B2Use of CL2 and/or HCL during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2010·Granted Jun 14, 2011·8 cites·14 claims
- 1988US7732305B2Use of Cl2 and/or HCl during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2006·Granted Jun 8, 2010·10 cites·21 claims
- 2087US7598178B2Carbon precursors for use during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·22 claims
- 2187US7439142B2Methods to fabricate MOSFET devices using a selective deposition processAPPLIED MATERIALS INC·Filed 2006·Granted Oct 21, 2008·10 cites·34 claims
- 2286US7560352B2Selective depositionAPPLIED MATERIALS INC·Filed 2006·Granted Jul 14, 2009·15 cites·34 claims
- 2385US9650726B2Methods and apparatus for deposition processesMYO NYI O·Filed 2011·Granted May 16, 2017·6 cites·17 claims
- 2485US7960236B2Phosphorus containing Si epitaxial layers in N-type source/drain junctionsAPPLIED MATERIALS INC·Filed 2007·Granted Jun 14, 2011·12 cites·13 claims
- 2585US7732269B2Method of ultra-shallow junction formation using Si film alloyed with carbonAPPLIED MATERIALS INC·Filed 2007·Granted Jun 8, 2010·10 cites·2 claims
- 2685US7588980B2Methods of controlling morphology during epitaxial layer formationAPPLIED MATERIALS INC·Filed 2007·Granted Sep 15, 2009·10 cites·21 claims
- 2781US10692993B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 23, 2020·2 cites·19 claims
- 2880US12453141B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 2979US11322583B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·1 cites·20 claims
- 3078US9460918B2Epitaxy of high tensile silicon alloy for tensile strain applicationsAPPLIED MATERIALS INC·Filed 2013·Granted Oct 4, 2016·3 cites·6 claims
- 3176US7772074B2Method of forming conformal silicon layer for recessed source-drainAPPLIED MATERIALS INC·Filed 2007·Granted Aug 10, 2010·5 cites·20 claims
- 3274US10260164B2Methods and apparatus for deposition processesAPPLIED MATERIALS INC·Filed 2017·Granted Apr 16, 2019·1 cites·5 claims
- 3373US9200367B2Method and apparatus for gas deliveryYE ZHIYUAN·Filed 2011·Granted Dec 1, 2015·3 cites·19 claims
- 3472US11996443B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 28, 2024·0 cites·17 claims
- 3572US8394196B2Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbonKIM YIHWAN·Filed 2006·Granted Mar 12, 2013·5 cites·19 claims
- 3672US7837790B2Formation and treatment of epitaxial layer containing silicon and carbonAPPLIED MATERIALS INC·Filed 2006·Granted Nov 23, 2010·3 cites·15 claims
- 3771US9721792B2Method of forming strain-relaxed buffer layersAPPLIED MATERIALS INC·Filed 2014·Granted Aug 1, 2017·2 cites·12 claims
- 3870US8999821B2Fin formation by epitaxial depositionAPPLIED MATERIALS INC·Filed 2014·Granted Apr 7, 2015·2 cites·20 claims
- 3970US7776698B2Selective formation of silicon carbon epitaxial layerAPPLIED MATERIALS INC·Filed 2007·Granted Aug 17, 2010·3 cites·19 claims
- 4069US12142671B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·15 claims
- 4168US8927066B2Method and apparatus for gas deliveryYE ZHIYUAN·Filed 2011·Granted Jan 6, 2015·2 cites·16 claims
- 4268US2025389024A1Apparatus for treating substrateSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4367US8586456B2Use of CL2 and/or HCL during silicon epitaxial film formationYE ZHIYUAN·Filed 2011·Granted Nov 19, 2013·1 cites·16 claims
- 4466US2025011932A1Showerhead and apparatus for processing a substrate including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4565US11171224B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·22 claims
- 4665US7700424B2Method of forming an embedded silicon carbon epitaxial layerAPPLIED MATERIALS INC·Filed 2008·Granted Apr 20, 2010·2 cites·18 claims
- 4765US2025234502A1Semiconductor devices including contact plug and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4864US10731272B2Methods and apparatus for deposition processesAPPLIED MATERIALS INC·Filed 2019·Granted Aug 4, 2020·0 cites·17 claims
- 4964US8207023B2Methods of selectively depositing an epitaxial layerYE ZHIYUAN·Filed 2010·Granted Jun 26, 2012·1 cites·20 claims
- 5063US9064960B2Selective epitaxy process controlLAM ANDREW·Filed 2007·Granted Jun 23, 2015·3 cites·17 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →