Inventor · disambiguated record
Yi Ma
Also filed as: MA YI · MA YI H · MA YI HUA
73 granted patents·14 pending applications·2,629 citations·filing 1992–2025
99Inventor score
Files withLUCENT TECHNOLOGIES INC17AGERE SYST GUARDIAN CORP11AGERE SYSTEMS INC11APPLIED MATERIALS INC11WORCESTER POLYTECH INST8
Top patents by PatentIndex Score
87 records- 0199US6152987AHydrogen gas-extraction module and method of fabricationWORCESTER POLYTECH INST·Filed 1998·Granted Nov 28, 2000·423 cites·30 claims
- 0297US6246095B1System and method for forming a uniform thin gate oxide layerAGERE SYST GUARDIAN CORP·Filed 1998·Granted Jun 12, 2001·250 cites·13 claims
- 0397US6025280AUse of SiD4 for deposition of ultra thin and controllable oxidesLUCENT TECHNOLOGIES INC·Filed 1997·Granted Feb 15, 2000·282 cites·14 claims
- 0497US5940736AMethod for forming a high quality ultrathin gate oxide layerLUCENT TECHNOLOGIES INC·Filed 1997·Granted Aug 17, 1999·264 cites·13 claims
- 0596US8043907B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2010·Granted Oct 25, 2011·42 cites·15 claims
- 0695US8426839B1Conducting bridge random access memory (CBRAM) device structuresMA YI·Filed 2010·Granted Apr 23, 2013·28 cites·11 claims
- 0794US7910446B2Integrated scheme for forming inter-poly dielectrics for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 22, 2011·39 cites·16 claims
- 0894US6011404ASystem and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductorLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jan 4, 2000·166 cites·30 claims
- 0993US8866122B1Resistive switching devices having a buffer layer and methods of formation thereofLEE WEI TI·Filed 2012·Granted Oct 21, 2014·18 cites·36 claims
- 1093US7659158B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Feb 9, 2010·25 cites·14 claims
- 1191US6320238B1Gate structure for integrated circuit fabricationAGERE SYST GUARDIAN CORP·Filed 1999·Granted Nov 20, 2001·89 cites·16 claims
- 1290US6162711AIn-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturingLUCENT TECHNOLOGIES INC·Filed 1999·Granted Dec 19, 2000·110 cites·20 claims
- 1389US7175694B2Composite gas separation modules having intermediate porous metal layersWORCESTER POLYTECH INST·Filed 2004·Granted Feb 13, 2007·53 cites·48 claims
- 1489US6509242B2Heterojunction bipolar transistorAGERE SYSTEMS INC·Filed 2001·Granted Jan 21, 2003·56 cites·18 claims
- 1588US7602067B2Hetero-structure variable silicon rich nitride for multiple level memory flash memory deviceSPANSION LLC·Filed 2007·Granted Oct 13, 2009·15 cites·20 claims
- 1685US7078302B2Gate electrode dopant activation method for semiconductor manufacturing including a laser annealAPPLIED MATERIALS INC·Filed 2004·Granted Jul 18, 2006·28 cites·33 claims
- 1783US9401472B1Programmable impedance elements and devices that include such elementsGOPALAN CHAKRAVARTHY·Filed 2011·Granted Jul 26, 2016·10 cites·16 claims
- 1883US6274490B1Method of manufacturing semiconductor devices having high pressure annealLUCENT TECHNOLOGIES INC·Filed 2000·Granted Aug 14, 2001·30 cites·24 claims
- 1982US6518622B1Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture thereforAGERE SYSTEMS INC·Filed 2000·Granted Feb 11, 2003·35 cites·24 claims
- 2080US9099633B2Solid electrolyte memory elements with electrode interface for improved performanceADESTO TECHNOLOGIES CORP·Filed 2013·Granted Aug 4, 2015·3 cites·16 claims
- 2179US7871942B2Methods for manufacturing high dielectric constant filmAPPLIED MATERIALS INC·Filed 2008·Granted Jan 18, 2011·6 cites·18 claims
- 2279US6207586B1Oxide/nitride stacked gate dielectric and associated methodsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Mar 27, 2001·55 cites·41 claims
- 2378US8847192B2Resistive switching devices having alloyed electrodes and methods of formation thereofLEE WEI TI·Filed 2012·Granted Sep 30, 2014·5 cites·32 claims
- 2478US5960302AMethod of making a dielectric for an integrated circuitLUCENT TECHNOLOGIES INC·Filed 1996·Granted Sep 28, 1999·48 cites·12 claims
- 2578US5258339AFormation of zeolite membranes from solsWORCESTER POLYTECH INST·Filed 1992·Granted Nov 2, 1993·55 cites·25 claims
- 2676US6548854B1Compound, high-K, gate and capacitor insulator layerAGERE SYSTEMS INC·Filed 1997·Granted Apr 15, 2003·37 cites·20 claims
- 2776US6417570B1Layered dielectric film structure suitable for gate dielectric application in sub-0.25 μm technologiesAGERE SYST GUARDIAN CORP·Filed 1999·Granted Jul 9, 2002·37 cites·9 claims
- 2874US6451660B1Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated waterAGERE SYST GUARDIAN CORP·Filed 2000·Granted Sep 17, 2002·18 cites·19 claims
- 2973US7611976B2Gate electrode dopant activation method for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2006·Granted Nov 3, 2009·3 cites·43 claims
- 3072US6670242B1Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layerAGERE SYSTEMS INC·Filed 2000·Granted Dec 30, 2003·16 cites·20 claims
- 3171US8829482B1Variable impedance memory device structure and method of manufacture including programmable impedance memory cells and methods of forming the sameGALLO ANTONIO R·Filed 2011·Granted Sep 9, 2014·5 cites·27 claims
- 3271US5908312ASemiconductor device fabricationLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jun 1, 1999·39 cites·12 claims
- 3370US9391270B1Memory cells with vertically integrated tunnel access device and programmable impedance elementADESTO TECHNOLOGIES CORP·Filed 2014·Granted Jul 12, 2016·2 cites·19 claims
- 3470US8366805B2Composite structures with porous anodic oxide layers and methods of fabricationWORCESTER POLYTECH INST·Filed 2008·Granted Feb 5, 2013·4 cites·11 claims
- 3570US7390536B2Method for fabricating composite gas separation modulesWORCESTER POLYTECH INST·Filed 2004·Granted Jun 24, 2008·16 cites·30 claims
- 3669US11069789B2Varied silicon richness silicon nitride formationMONTEREY RES LLC·Filed 2020·Granted Jul 20, 2021·0 cites·1 claims
- 3769US7255726B2Composite gas separation modules having high Tamman temperature intermediate layersWORCESTER POLYTECH INST·Filed 2004·Granted Aug 14, 2007·15 cites·43 claims
- 3869US6313007B1Semiconductor device, trench isolation structure and methods of formationsAGERE SYST GUARDIAN CORP·Filed 2000·Granted Nov 6, 2001·19 cites·36 claims
- 3967US2022005933A1Varied silicon richness silicon nitride formationMONTEREY RES LLC·Filed 2021·Application pending·0 cites
- 4066US5846871AIntegrated circuit fabricationLUCENT TECHNOLOGIES INC·Filed 1997·Granted Dec 8, 1998·25 cites·3 claims
- 4165US9306161B1Fabrication methods of conducting bridge random access memory (CBRAM) device structuresADESTO TECHNOLOGIES CORP·Filed 2013·Granted Apr 5, 2016·1 cites·12 claims
- 4265US7727596B2Method for fabricating a composite gas separation moduleWORCESTER POLYTECH INST·Filed 2004·Granted Jun 1, 2010·15 cites·36 claims
- 4365US5814562AProcess for semiconductor device fabricationLUCENT TECHNOLOGIES INC·Filed 1995·Granted Sep 29, 1998·32 cites·10 claims
- 4464US6013418AMethod for developing images in energy sensitive materialsLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jan 11, 2000·24 cites·12 claims
- 4563US9012333B2Varied silicon richness silicon nitride formationMA YI·Filed 2009·Granted Apr 21, 2015·1 cites·20 claims
- 4663US8652239B2High permeance sulfur tolerant Pd/Cu alloy membranesMA YI HUA·Filed 2011·Granted Feb 18, 2014·2 cites·44 claims
- 4762US7737036B2Integrated circuit fabrication process with minimal post-laser annealing dopant deactivationAPPLIED MATERIALS INC·Filed 2007·Granted Jun 15, 2010·1 cites·22 claims
- 4862US5981403ALayered silicon nitride deposition processLUCENT TECHNOLOGIES INC·Filed 1997·Granted Nov 9, 1999·25 cites·7 claims
- 4961US6147388APolycide gate structure with intermediate barrierLUCENT TECHNOLOGIES INC·Filed 1997·Granted Nov 14, 2000·20 cites·4 claims
- 5060US8987092B2Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edgesKANG INKUK·Filed 2008·Granted Mar 24, 2015·3 cites·16 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →