Inventor · disambiguated record
Yi-Shien Mor
Also filed as: MOR YI-SHIEN
38 granted patents·3 pending applications·894 citations·filing 1999–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16TAIWAN SEMICONDUCTOR MFG10UNITED MICROELECTRONICS CORP7MOR YI-SHIEN3LIN YIH-ANN1
Top patents by PatentIndex Score
41 records- 0199US6521547B1Method of repairing a low dielectric constant material layerUNITED MICROELECTRONICS CORP·Filed 2001·Granted Feb 18, 2003·548 cites·16 claims
- 0294US7378713B2Semiconductor devices with dual-metal gate structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 27, 2008·37 cites·26 claims
- 0393US8383502B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·11 cites·15 claims
- 0492US9601388B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·6 cites·20 claims
- 0590US10692769B2Fin critical dimension loading optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 23, 2020·7 cites·20 claims
- 0690US8659097B2Control fin heights in FinFET structuresMOR YI-SHIEN·Filed 2012·Granted Feb 25, 2014·12 cites·12 claims
- 0790US6316347B1Air gap semiconductor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 13, 2001·59 cites·25 claims
- 0889US9466696B2FinFETs and methods for forming the sameMOR YI-SHIEN·Filed 2012·Granted Oct 11, 2016·16 cites·19 claims
- 0988US6635967B2Air gap semiconductor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2001·Granted Oct 21, 2003·42 cites·7 claims
- 1087US11004747B2Fin critical dimension loading optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·2 cites·20 claims
- 1187US9460970B2Control fin heights in FinFET structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·5 cites·20 claims
- 1286US8865560B2FinFET design with LDD extensionsMOR YI-SHIEN·Filed 2012·Granted Oct 21, 2014·10 cites·19 claims
- 1386US8003507B2Method of integrating high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·8 cites·8 claims
- 1485US8841731B2Integrated high-k/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 23, 2014·5 cites·17 claims
- 1585US6583067B2Method of avoiding dielectric layer deterioration with a low dielectric constantUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jun 24, 2003·32 cites·19 claims
- 1684US9960160B2Method of forming a single metal that performs N work function and P work function in a high-k/metal gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 1, 2018·5 cites·13 claims
- 1784US8349680B2High-k metal gate CMOS patterning methodTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 8, 2013·9 cites·20 claims
- 1884US8048752B2Spacer shape engineering for void-free gap-filling processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·9 cites·18 claims
- 1983US10366989B2Semiconductor device having a contact bar over an S/D structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 30, 2019·3 cites·20 claims
- 2082US6498070B2Air gap semiconductor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 24, 2002·27 cites·20 claims
- 2180US8975698B2Control fin heights in FinFET structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·4 cites·19 claims
- 2278US8524588B2Method of forming a single metal that performs N work function and P work function in a high-k/metal gate processLIN YIH-ANN·Filed 2009·Granted Sep 3, 2013·5 cites·17 claims
- 2376US12015030B2Gate stacks for semiconductor devices of different conductivity typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2476US9257426B2Integrated high-k/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 2575US2025359107A1Gate-top dielectric structure for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2674US7947591B2Semiconductor devices with dual-metal gate structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 24, 2011·5 cites·16 claims
- 2772US10748896B2Method for fabricating semiconductor device including contact bars having narrower portionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·1 cites·20 claims
- 2870US11749679B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 2968US11469227B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 3065US10529862B2Semiconductor device and method of forming semiconductor fin thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·1 cites·20 claims
- 3162US7382028B2Method for forming silicide and semiconductor device formed therebyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 3, 2008·2 cites·12 claims
- 3260US11289481B2Single metal that performs N work function and P work function in a high-K/metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 29, 2022·0 cites·20 claims
- 3360US11075199B2Method of forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·0 cites·20 claims
- 3458US6423652B1Post-processing treatment of low dielectric constant materialUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 23, 2002·21 cites·2 claims
- 3556US10204905B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 12, 2019·0 cites·20 claims
- 3653US9466528B2Method of making a structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·0 cites·20 claims
- 3748US8872339B2Semiconductors structure with elements having different widths and methods of making the sameLIU CHIA-CHU·Filed 2012·Granted Oct 28, 2014·0 cites·20 claims
- 3848US8461654B2Spacer shape engineering for void-free gap-filling processWU MING-YUAN·Filed 2011·Granted Jun 11, 2013·0 cites·15 claims
- 3938US6979654B2Method of avoiding dielectric layer deterioation with a low dielectric constant during a stripping processUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 27, 2005·0 cites·17 claims
- 4036US2002164868A1Method for forming a silicon dioxide-low k dielectric stackFiled 2001·Application pending·0 cites
- 4136US2003008516A1Method of reinforcing a low dielectric constant material layer against damage caused by a photoresist stripperFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →