Inventor · disambiguated record
Yixiong Yang
Also filed as: YANG YIXIONG
57 granted patents·38 pending applications·56 citations·filing 2014–2025
97Inventor score
Top patents by PatentIndex Score
95 records- 0197US11715667B2Thermal process chamber lid with backside pumpingAPPLIED MATERIALS INC·Filed 2022·Granted Aug 1, 2023·5 cites·10 claims
- 0296US11289579B2P-type dipole for p-FETAPPLIED MATERIALS INC·Filed 2020·Granted Mar 29, 2022·4 cites·10 claims
- 0395US12022650B2Low resistivity DRAM buried word line stackAPPLIED MATERIALS INC·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0495US11658218B2P-type dipole for p-FETAPPLIED MATERIALS INC·Filed 2022·Granted May 23, 2023·2 cites·19 claims
- 0594US11587936B2Low resistivity DRAM buried word line stackAPPLIED MATERIALS INC·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 0693US11417517B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 0792US11384432B2Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plateAPPLIED MATERIALS INC·Filed 2015·Granted Jul 12, 2022·5 cites·20 claims
- 0890US11335591B2Thermal process chamber lid with backside pumpingAPPLIED MATERIALS INC·Filed 2020·Granted May 17, 2022·2 cites·11 claims
- 0989US11907331B1Method and system for evaluating fractal dimension of particle matter in dispersing systemUNIV HUAZHONG SCIENCE TECH·Filed 2023·Granted Feb 20, 2024·2 cites·10 claims
- 1089US11437271B2Seamless gap fillAPPLIED MATERIALS INC·Filed 2020·Granted Sep 6, 2022·2 cites·15 claims
- 1189US10407771B2Atomic layer deposition chamber with thermal lidAPPLIED MATERIALS INC·Filed 2014·Granted Sep 10, 2019·12 cites·18 claims
- 1288US11245022B2Integrated dipole flow for transistorAPPLIED MATERIALS INC·Filed 2020·Granted Feb 8, 2022·2 cites·7 claims
- 1386US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 1482US12288717B2Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2024·Granted Apr 29, 2025·0 cites·11 claims
- 1582US2024266163A1Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1681US11359282B2Methods for forming impurity free metal alloy filmsAPPLIED MATERIALS INC·Filed 2020·Granted Jun 14, 2022·1 cites·10 claims
- 1780US11996455B2P-type dipole for P-FETAPPLIED MATERIALS INC·Filed 2023·Granted May 28, 2024·0 cites·16 claims
- 1880US10199230B2Methods for selective deposition of metal silicides via atomic layer deposition cyclesAPPLIED MATERIALS INC·Filed 2015·Granted Feb 5, 2019·3 cites·19 claims
- 1979US12387975B2Thermal process chamber lid with backside pumpingAPPLIED MATERIALS INC·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 2078US11961734B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2022·Granted Apr 16, 2024·0 cites·10 claims
- 2178US11955332B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2022·Granted Apr 9, 2024·0 cites·18 claims
- 2276US11894233B2Electronic device having an oxygen free platinum group metal filmAPPLIED MATERIALS INC·Filed 2022·Granted Feb 6, 2024·0 cites·9 claims
- 2376US2024287678A1Methods for forming impurity free metal alloy filmsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2475US12051734B2PMOS high-k metal gatesAPPLIED MATERIALS INC·Filed 2022·Granted Jul 30, 2024·0 cites·13 claims
- 2575US11932939B2Lids and lid assembly kits for atomic layer deposition chambersAPPLIED MATERIALS INC·Filed 2021·Granted Mar 19, 2024·0 cites·20 claims
- 2674US11062900B2Method of reducing effective oxide thickness in a semiconductor structureAPPLIED MATERIALS INC·Filed 2019·Granted Jul 13, 2021·1 cites·19 claims
- 2774US2025006499A1Integrated dipole region for transistorAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2873US12020982B2Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2022·Granted Jun 25, 2024·0 cites·14 claims
- 2973US11075276B2Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursorsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 27, 2021·1 cites·16 claims
- 3072US12453086B2Low resistivity metal contact stackAPPLIED MATERIALS INC·Filed 2021·Granted Oct 21, 2025·0 cites·15 claims
- 3172US12328872B2Liner for V-NAND word line stackAPPLIED MATERIALS INC·Filed 2022·Granted Jun 10, 2025·0 cites·7 claims
- 3272US9595466B2Methods for etching via atomic layer deposition (ALD) cyclesAPPLIED MATERIALS INC·Filed 2015·Granted Mar 14, 2017·2 cites·19 claims
- 3372US2024268108A1V-nand stacks with dipole regionsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3471US12112951B2Integrated dipole region for transistorAPPLIED MATERIALS INC·Filed 2022·Granted Oct 8, 2024·0 cites·9 claims
- 3571US2024154018A1Methods of forming semiconductor structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3669US12463093B2Method of tuning film properties of metal nitride using plasmaAPPLIED MATERIALS INC·Filed 2023·Granted Nov 4, 2025·0 cites·7 claims
- 3768US11888045B2Integrated dipole flow for transistorAPPLIED MATERIALS INC·Filed 2021·Granted Jan 30, 2024·0 cites·16 claims
- 3868US2023343645A1Gradient oxidation and etch of pvd molybdenum for bottom up gap fillAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3967US10170321B2Aluminum content control of TiAIN filmsAPPLIED MATERIALS INC·Filed 2017·Granted Jan 1, 2019·1 cites·15 claims
- 4067US2022267904A1Methods for forming impurity free metal alloy filmsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4166US11997849B2V-NAND stacks with dipole regionsAPPLIED MATERIALS INC·Filed 2021·Granted May 28, 2024·0 cites·19 claims
- 4266US11908914B2Methods of forming semiconductor structuresAPPLIED MATERIALS INC·Filed 2021·Granted Feb 20, 2024·0 cites·16 claims
- 4366US11552177B2PMOS high-K metal gatesAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·0 cites·7 claims
- 4466US2024371613A1High-throughput plasma lid for semiconductor manufacturing processing chambersAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4565US2023343643A1Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fillAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4663US2025305130A1Ultrasonic Assisted Decomposition SystemAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 4763US2020373200A1Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 4862US12183798B2Threshold voltage modulation for gate-all-around FET architectureAPPLIED MATERIALS INC·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 4962US11476267B2Liner for V-NAND word line stackAPPLIED MATERIALS INC·Filed 2020·Granted Oct 18, 2022·0 cites·8 claims
- 5061US12467133B2Conformal molybdenum depositionAPPLIED MATERIALS INC·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →