Inventor · disambiguated record
Yong-Ho Ha
Also filed as: HA YONG-HO
36 granted patents·13 pending applications·875 citations·filing 2004–2023
98Inventor score
Top patents by PatentIndex Score
49 records- 0198US6894305B2Phase-change memory devices with a self-heater structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 17, 2005·388 cites·31 claims
- 0296US7126847B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 24, 2006·51 cites·22 claims
- 0395US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0495US7462900B2Phase changeable memory devices including nitrogen and/or siliconSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 9, 2008·34 cites·22 claims
- 0595US7425735B2Multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 16, 2008·38 cites·24 claims
- 0694US9287181B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2015·Granted Mar 15, 2016·16 cites·26 claims
- 0794US7615401B2Methods of fabricating multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 10, 2009·33 cites·21 claims
- 0894US7476917B2Phase-changeable memory devices including nitrogen and/or silicon dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·31 cites·12 claims
- 0991US7402851B2Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 22, 2008·49 cites·19 claims
- 1088US7817464B2Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 19, 2010·22 cites·24 claims
- 1187US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 1286US8732984B2Shock absorbing shoes with triangle shock absorbing spaceHA YONG-HO·Filed 2013·Granted May 27, 2014·18 cites·5 claims
- 1386US7824954B2Methods of forming phase change memory devices having bottom electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·36 claims
- 1484US8456891B2Nonvolatile memory cells having oxygen diffusion barrier layers thereinBAEK IN-GYU·Filed 2011·Granted Jun 4, 2013·8 cites·20 claims
- 1584US7495456B2System and method of determining pulse properties of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·9 cites·27 claims
- 1683US8445354B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2012·Granted May 21, 2013·5 cites·11 claims
- 1783US8426840B2Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2010·Granted Apr 23, 2013·12 cites·10 claims
- 1883US7791932B2Phase-change material layer and phase-change memory device including the phase-change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·25 claims
- 1981US9553094B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2016·Granted Jan 24, 2017·3 cites·12 claims
- 2079US8012789B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·6 cites·13 claims
- 2179US7394087B2Phase-changeable memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·13 cites·15 claims
- 2279US7126846B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 24, 2006·9 cites·17 claims
- 2376US7692176B2Phase-changeable memory devices including an adiabatic layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 6, 2010·6 cites·15 claims
- 2476US7082051B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·22 cites·12 claims
- 2575US8039829B2Contact structure, a semiconductor device employing the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·6 cites·13 claims
- 2672US7727458B2Method of forming a chalcogenide compound targetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·2 cites·17 claims
- 2767US7943918B2Multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 17, 2011·4 cites·18 claims
- 2865US7989259B2Methods of manufacturing phase-changeable memory devices including upper and lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 2, 2011·2 cites·17 claims
- 2959US2024164094A1Semiconductor memory devices and electronic systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3056US8133757B2Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset currentKWON HYUN-SUK·Filed 2009·Granted Mar 13, 2012·2 cites·9 claims
- 3156US7741631B2Phase-changeable memory devices including phase-changeable materials on silicon nitride layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 22, 2010·2 cites·10 claims
- 3254US8133429B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2010·Granted Mar 13, 2012·1 cites·32 claims
- 3353US11127739B2Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·10 claims
- 3451US2020077056A1Shoe capable of changing imagesHA YONG HO·Filed 2019·Application pending·0 cites
- 3549US8513051B2Methods of forming phase-changeable memory devices including an adiabatic layerHA YONG-HO·Filed 2010·Granted Aug 20, 2013·0 cites·9 claims
- 3648US11558319B2Method for determining targets for transmitting instant messages and apparatus thereofKAKAO CORP·Filed 2021·Granted Jan 17, 2023·0 cites·11 claims
- 3745US2011315946A1Nonvolatile memory deviceKO HAN-BONG·Filed 2011·Application pending·0 cites
- 3845US2014374840A1Semiconductor devices using mos transistors with nonuniform gate electrode structures and methods of fabricating the sameLEE HYE-LAN·Filed 2014·Application pending·0 cites
- 3945US2009035514A1Phase change memory device and method of fabricating the sameKANG MYUNG-JIN·Filed 2008·Application pending·0 cites
- 4044US10770560B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 8, 2020·0 cites·20 claims
- 4143US10438800B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·0 cites·16 claims
- 4243US2006016396A1Apparatus for depositing a thin film on a substrateKUH BONG-JIN·Filed 2005·Application pending·0 cites
- 4341US2010176365A1Resistance variable memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4441US2013234100A1Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2013·Application pending·0 cites
- 4539US2011031461A1Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4639US2008075843A1Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4736US2009057644A1Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4836US2009250682A1Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4933US2012032135A1Phase-Change Memory Units and Phase-Change Memory Devices Using the SameKUH BONG-JIN·Filed 2011·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yong-Ho Ha files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →