Inventor · disambiguated record
Yong-Fen Hsieh
Also filed as: HSIEH YONG-FEN
15 granted patents·256 citations·filing 1995–2013
94Inventor score
Files withUNITED MICROELECTRONICS CORP9AU OPTRONICS CORP2ACADEMIA SINICA1HSIEH YONG-FEN1NAT HEALTH RESEARCH INSTITUTES1
Top patents by PatentIndex Score
15 records- 0177US6958539B2Metal bump with an insulating sidewall and method of fabricating thereofAU OPTRONICS CORP·Filed 2001·Granted Oct 25, 2005·27 cites·8 claims
- 0276US7041589B2Metal bump with an insulating sidewall and method of fabricating thereofAU OPTRONICS CORP·Filed 2003·Granted May 9, 2006·25 cites·4 claims
- 0372US5956590AProcess of forming a field effect transistor without spacer mask edge defectsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 21, 1999·42 cites·24 claims
- 0468US9384942B2Specimen preparation for transmission electron microscopyNAT HEALTH RESEARCH INSTITUTES·Filed 2013·Granted Jul 5, 2016·2 cites·15 claims
- 0567US6228711B1Method of fabricating dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 8, 2001·36 cites·20 claims
- 0664US8969827B2Specimen preparation for transmission electron microscopyHSIEH YONG-FEN·Filed 2012·Granted Mar 3, 2015·2 cites·8 claims
- 0759US5940678AMethod of forming precisely cross-sectioned electron-transparent samplesUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 17, 1999·21 cites·32 claims
- 0858US8791416B2On-chip thin film Zernike phase plate and applications thereofACADEMIA SINICA·Filed 2013·Granted Jul 29, 2014·1 cites·15 claims
- 0957US6093618AMethod of fabricating a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 25, 2000·26 cites·24 claims
- 1055US5482876AField effect transistor without spacer mask edge defectsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 9, 1996·22 cites·18 claims
- 1153US6043148AMethod of fabricating contact plugUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 28, 2000·21 cites·15 claims
- 1247US6022457AMethod of manufacturing cobalt silicide layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 8, 2000·11 cites·9 claims
- 1341US5897373AMethod of manufacturing semiconductor components having a titanium nitride layerUNITED MICROELECTRONICS CORP·Filed 1997·Granted Apr 27, 1999·7 cites·12 claims
- 1438US5989986AMethod to inhibit the formation of ion implantation induced edge defectsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 23, 1999·7 cites·9 claims
- 1533US6184082B1Method of fabricating dynamic random access memoryUNITED MICROELECTRONICS CORP U·Filed 1999·Granted Feb 6, 2001·6 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →