Inventor · disambiguated record
Young S. Lee
Also filed as: LEE YOUNG · LEE YOUNG S · LEE YOUNG SEB
33 granted patents·11 pending applications·3,944 citations·filing 1993–2015
98Inventor score
Files withAPPLIED MATERIALS INC34WANG ANCHUAN2WANG YUNYU2CUI ZHENJIANG1KOREA SEMICONDUCTOR ILLUMINATI1
Top patents by PatentIndex Score
44 records- 0199US9418858B2Selective etch of silicon by way of metastable hydrogen terminationAPPLIED MATERIALS INC·Filed 2014·Granted Aug 16, 2016·138 cites·20 claims
- 0299US9093390B2Conformal oxide dry etchAPPLIED MATERIALS INC·Filed 2014·Granted Jul 28, 2015·185 cites·17 claims
- 0399US8801952B1Conformal oxide dry etchAPPLIED MATERIALS INC·Filed 2013·Granted Aug 12, 2014·191 cites·18 claims
- 0498US9412581B2Low-K dielectric gapfill by flowable depositionAPPLIED MATERIALS INC·Filed 2014·Granted Aug 9, 2016·396 cites·7 claims
- 0598US9236266B2Dry-etch for silicon-and-carbon-containing filmsAPPLIED MATERIALS INC·Filed 2014·Granted Jan 12, 2016·153 cites·20 claims
- 0698US8808563B2Selective etch of silicon by way of metastable hydrogen terminationWANG ANCHUAN·Filed 2012·Granted Aug 19, 2014·184 cites·20 claims
- 0798US8771536B2Dry-etch for silicon-and-carbon-containing filmsZHANG JINGCHUN·Filed 2011·Granted Jul 8, 2014·185 cites·18 claims
- 0898US8679983B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·184 cites·20 claims
- 0998US8679982B2Selective suppression of dry-etch rate of materials containing both silicon and oxygenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·189 cites·20 claims
- 1098US8642481B2Dry-etch for silicon-and-nitrogen-containing filmsAPPLIED MATERIALS INC·Filed 2013·Granted Feb 4, 2014·188 cites·19 claims
- 1198US7967913B2Remote plasma clean process with cycled high and low pressure clean stepsAPPLIED MATERIALS INC·Filed 2009·Granted Jun 28, 2011·477 cites·19 claims
- 1298US7678715B2Low wet etch rate silicon nitride filmAPPLIED MATERIALS INC·Filed 2007·Granted Mar 16, 2010·516 cites·25 claims
- 1397US9064816B2Dry-etch for selective oxidation removalAPPLIED MATERIALS INC·Filed 2013·Granted Jun 23, 2015·188 cites·18 claims
- 1497US8450191B2Polysilicon films by HDP-CVDWANG ANCHUAN·Filed 2011·Granted May 28, 2013·475 cites·16 claims
- 1595US7910491B2Gapfill improvement with low etch rate dielectric linersAPPLIED MATERIALS INC·Filed 2009·Granted Mar 22, 2011·90 cites·24 claims
- 1695US7524750B2Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVDAPPLIED MATERIALS INC·Filed 2006·Granted Apr 28, 2009·55 cites·21 claims
- 1793US7799704B2Gas baffle and distributor for semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2008·Granted Sep 21, 2010·15 cites·10 claims
- 1891US7745350B2Impurity control in HDP-CVD DEP/ETCH/DEP processesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·13 cites·12 claims
- 1991US7740706B2Gas baffle and distributor for semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2006·Granted Jun 22, 2010·19 cites·19 claims
- 2084US7972968B2High density plasma gapfill deposition-etch-deposition process etchantAPPLIED MATERIALS INC·Filed 2008·Granted Jul 5, 2011·9 cites·19 claims
- 2182US7651587B2Two-piece dome with separate RF coils for inductively coupled plasma reactorsAPPLIED MATERIALS INC·Filed 2005·Granted Jan 26, 2010·8 cites·15 claims
- 2280US7867921B2Reduction of etch-rate drift in HDP processesAPPLIED MATERIALS INC·Filed 2008·Granted Jan 11, 2011·7 cites·19 claims
- 2378US7766510B2Cooling structure for street lamp using light emitting diodeKOREA SEMICONDUCTOR ILLUMINATI·Filed 2008·Granted Aug 3, 2010·16 cites·14 claims
- 2478US7329586B2Gapfill using deposition-etch sequenceAPPLIED MATERIALS INC·Filed 2005·Granted Feb 12, 2008·6 cites·19 claims
- 2577US8541312B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenAPPLIED MATERIALS INC·Filed 2013·Granted Sep 24, 2013·3 cites·18 claims
- 2676US7704897B2HDP-CVD SiON films for gap-fillAPPLIED MATERIALS INC·Filed 2008·Granted Apr 27, 2010·7 cites·27 claims
- 2773US7629271B1High stress diamond like carbon filmAPPLIED MATERIALS INC·Filed 2008·Granted Dec 8, 2009·4 cites·20 claims
- 2870US7229931B2Oxygen plasma treatment for enhanced HDP-CVD gapfillAPPLIED MATERIALS INC·Filed 2004·Granted Jun 12, 2007·16 cites·20 claims
- 2967US7811411B2Thermal management of inductively coupled plasma reactorsAPPLIED MATERIALS INC·Filed 2005·Granted Oct 12, 2010·2 cites·15 claims
- 3066US8414747B2High-throughput HDP-CVD processes for advanced gapfill applicationsQI BO·Filed 2007·Granted Apr 9, 2013·3 cites·11 claims
- 3162US7989366B2Dopant activation in doped semiconductor substratesAPPLIED MATERIALS INC·Filed 2007·Granted Aug 2, 2011·1 cites·24 claims
- 3260US2008124944A1Gas baffle and distributor for semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3359US8497211B2Integrated process modulation for PSG gapfillLEE YOUNG S·Filed 2012·Granted Jul 30, 2013·2 cites·16 claims
- 3456US5424107AReinforced corner structure for clothKYOHA IND CO LTD·Filed 1993·Granted Jun 13, 1995·19 cites·1 claims
- 3551US2014187045A1Silicon nitride gapfill implementing high density plasmaAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 3649US2013045605A1Dry-etch for silicon-and-nitrogen-containing filmsAPPLIED MATERIALS INC·Filed 2012·Application pending·0 cites
- 3748US2008063810A1In-situ process state monitoring of chamberAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3847US2008029484A1In-situ process diagnostics of in-film aluminum during plasma depositionAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3947US2006154494A1High-throughput HDP-CVD processes for advanced gapfill applicationsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 4045US2015311089A1Dry-etch for selective oxidation removalAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 4145US2008299775A1Gapfill extension of hdp-cvd integrated process modulation sio2 processAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 4243US2008142483A1Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfillsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 4339US2007029046A1Methods and systems for increasing substrate temperature in plasma reactorsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 4431US2012009796A1Post-ash sidewall healingCUI ZHENJIANG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →