Inventor · disambiguated record
Yongxun Liu
Also filed as: LIU YONGXUN
10 granted patents·2 pending applications·96 citations·filing 2002–2016
88Inventor score
Files withNAT INST OF ADVANCED IND SCIEN6LIU YONGXUN2ADVANTEST CORP1AIST1NAT INST OF ADV IND SCIENCE AN1
Top patents by PatentIndex Score
12 records- 0191US8399330B2Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistorLIU YONGXUN·Filed 2012·Granted Mar 19, 2013·19 cites·2 claims
- 0289US7382020B2Semiconductor integrated circuitNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Jun 3, 2008·19 cites·12 claims
- 0387US8399879B2Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistorLIU YONGXUN·Filed 2009·Granted Mar 19, 2013·18 cites·6 claims
- 0476US8040717B2SRAM cell and SRAM deviceNAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Oct 18, 2011·7 cites·7 claims
- 0576US7282959B2CMOS circuit including double-insulated-gate field-effect transistorsNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Oct 16, 2007·8 cites·20 claims
- 0673US8077510B2SRAM deviceOUCHI SHINICHI·Filed 2007·Granted Dec 13, 2011·6 cites·4 claims
- 0770US6903637B2Connecting member, a micro-switch, a method for manufacturing a connecting member, and a method for manufacturing a micro-switchADVANTEST CORP·Filed 2002·Granted Jun 7, 2005·15 cites·21 claims
- 0867US7423324B2Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the sameNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Sep 9, 2008·4 cites·19 claims
- 0949US2011057163A1Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistorNAT INST OF ADVANCED IND SCIEN·Filed 2009·Application pending·0 cites
- 1045US7999321B2Field-effect transistor and integrated circuit including the sameNAT INST OF ADVANCED IND SCIEN·Filed 2008·Granted Aug 16, 2011·0 cites·17 claims
- 1138US10636751B2Semiconductor device including circuit having security functionAIST·Filed 2016·Granted Apr 28, 2020·0 cites·16 claims
- 1235US2007029623A1Dual-gate field effect transistorNAT INST OF ADV IND SCIENCE AN·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →