Inventor · disambiguated record
Yong-Yan Lu
Also filed as: LU YONG · LU YONG-YAN
34 granted patents·5 pending applications·39 citations·filing 2013–2023
94Inventor score
Top patents by PatentIndex Score
39 records- 0198US9607838B1Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·25 cites·20 claims
- 0293US10515966B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·5 cites·20 claims
- 0393US10056383B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·6 cites·20 claims
- 0485US10797052B2Method and structure for FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·20 claims
- 0584US12021082B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 0681US10916546B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·1 cites·20 claims
- 0780US11855089B2Method and structure for FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 0876US11574907B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 0975US11489054B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
- 1074US11569230B2Method and structure for FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 1167US10840346B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 1262US10516024B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 1360US12356607B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 8, 2025·0 cites·17 claims
- 1460US10157924B2Method and structure for FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 1559US12376290B2Semiconductor structure having buried word line structure with dielectric layers of different dielectric constants, and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2023·Granted Jul 29, 2025·0 cites·13 claims
- 1659US11877440B2Bit line structure including ohmic contact and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 16, 2024·0 cites·6 claims
- 1755US12432903B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2023·Granted Sep 30, 2025·0 cites·9 claims
- 1855US12284800B2Semiconductor structure and method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Apr 22, 2025·0 cites·9 claims
- 1955US12224323B2Fabrication method of buried wordline structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 11, 2025·0 cites·15 claims
- 2055US11980020B2Semiconductor structure and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 7, 2024·0 cites·12 claims
- 2155US9553172B2Method and structure for FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·0 cites·20 claims
- 2254US12114478B2Semiconductor structure and method for preparing sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 8, 2024·0 cites·17 claims
- 2354US11894419B2Double-sided capacitor and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 6, 2024·0 cites·18 claims
- 2454US2023163197A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2552US12213309B2Semiconductor device and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 28, 2025·0 cites·12 claims
- 2652US11984472B2Double-sided capacitor structure and method for forming the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·12 claims
- 2750US11935925B2Method for manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Mar 19, 2024·0 cites·18 claims
- 2850US11869930B2Method for forming semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 9, 2024·0 cites·14 claims
- 2949US12266683B2Capacitor structure and method of manufacturing same, and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Apr 1, 2025·0 cites·14 claims
- 3049US11723190B2Capacitor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Aug 8, 2023·0 cites·16 claims
- 3146US12283516B2Semiconductor device and method for manufacturing the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Apr 22, 2025·0 cites·8 claims
- 3246US10964815B2CMOS finFET with doped spacers and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·15 claims
- 3345US12148654B2Semiconductor structure including a trench having a high aspect ratio formed by etching and its manufacturing method as applied to formation of a capacitor in the semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 19, 2024·0 cites·13 claims
- 3445US11916102B2Double-sided capacitor structures and forming methods thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 27, 2024·0 cites·12 claims
- 3545US2023017450A1Semiconductor structure and fabrication methodCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 3645US2023115307A1Buried word line structure and method for manufacturing same, and dynamic random access memoryCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 3743US2022013655A1Semiconductor device and method for preparing sameCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 3842US11864378B2Semiconductor device and method for manufacturing semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 2, 2024·0 cites·8 claims
- 3932US2015372658A1Low-insertion-loss piezoelectric acoustic wave band-pass filter and realization method thereofZTE CORP·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →