Inventor · disambiguated record
Yoshikazu Morooka
Also filed as: MOROOKA YOSHIKAZU
28 granted patents·2 pending applications·1,664 citations·filing 1984–2010
98Inventor score
Top patents by PatentIndex Score
30 records- 0198US6442644B1Memory system having synchronous-link DRAM (SLDRAM) devices and controllerADVANCED MEMORY INTERNATIONAL·Filed 1998·Granted Aug 27, 2002·551 cites·40 claims
- 0296US5994934ADelay locked loop circuitMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·142 cites·13 claims
- 0396US5963502AClock-synchronous type semiconductor memory device capable of outputting read clock signal at correct timingMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 5, 1999·175 cites·9 claims
- 0493US7724606B2Interface circuitRENESAS TECH CORP·Filed 2007·Granted May 25, 2010·27 cites·9 claims
- 0592US5357478ASemiconductor integrated circuit device including a plurality of cell array blocksMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 18, 1994·97 cites·8 claims
- 0691US5200925ASerial access semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 6, 1993·93 cites·28 claims
- 0787US6101151ASynchronous semiconductor memory device employing temporary data output stop schemeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 8, 2000·68 cites·5 claims
- 0887US5574729ARedundancy circuit for repairing defective bits in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 12, 1996·63 cites·29 claims
- 0986US6392897B1Circuit moduleMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 21, 2002·66 cites·19 claims
- 1083US6421291B1Semiconductor memory device having high data input/output frequency and capable of efficiently testing circuit associated with data input/outputMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 16, 2002·34 cites·27 claims
- 1178US5586076ASemiconductor memory device permitting high speed data transfer and high density integrationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 17, 1996·40 cites·19 claims
- 1278US5384784ASemiconductor memory device comprising a test circuit and a method of operation thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 24, 1995·42 cites·19 claims
- 1369US6160434ANinety-degree phase shifterMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 12, 2000·23 cites·20 claims
- 1469US5404329ABoosting circuit improved to operate in a wider range of power supply voltage, and a semiconductor memory and a semiconductor integrated circuit device using the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 4, 1995·29 cites·15 claims
- 1568US6304502B1Semiconductor memory device connected to memory controller and memory system employing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 16, 2001·26 cites·18 claims
- 1668US5699303ASemiconductor memory device having controllable supplying capability of internal voltageMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 16, 1997·21 cites·9 claims
- 1768US5537351ASemiconductor memory device carrying out input and output of data in a predetermined bit organizationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 16, 1996·26 cites·16 claims
- 1866US5995435ASemiconductor memory device having controllable supplying capability of internal voltageMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·19 cites·29 claims
- 1966US5841705ASemiconductor memory device having controllable supplying capability of internal voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 24, 1998·19 cites·6 claims
- 2063US5323348ASemiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bitMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 21, 1994·23 cites·9 claims
- 2155US4734889ASemiconductor memoryMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 29, 1988·13 cites·6 claims
- 2253US5481497ASemiconductor memory device providing external output data signal in accordance with states of true and complementary read busesMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 2, 1996·16 cites·17 claims
- 2352US5926837AMemory system capable of reducing timing skew between clock signal and dataMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 20, 1999·24 cites·10 claims
- 2451US5481496ASemiconductor memory device and method of data transfer thereforMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 2, 1996·14 cites·8 claims
- 2542US6658639B2Semiconductor integrated circuit provided with determination circuitRENESAS TECH CORP·Filed 2001·Granted Dec 2, 2003·1 cites·12 claims
- 2641US5469402ABuffer circuit of a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 21, 1995·8 cites·7 claims
- 2740US2003126356A1Memory system having synchronous-link DRAM (SLDRAM) devices and controllerADVANCED MEMORY INTERNATIONAL·Filed 2002·Application pending·0 cites
- 2840US2010257324A1Interface circuitRENESAS TECH CORP·Filed 2010·Application pending·0 cites
- 2935US4641281ADynamic random access memory with hidden refresh controlMITSUBISHI ELECTRIC CORP·Filed 1984·Granted Feb 3, 1987·1 cites·1 claims
- 3032US5321654ASemiconductor device having no through current flow in standby periodMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 14, 1994·3 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →