Inventor · disambiguated record
Youseok Suh
Also filed as: SUH YOUSEOK
36 granted patents·12 pending applications·85 citations·filing 2005–2022
96Inventor score
Files withSPANSION LLC18CYPRESS SEMICONDUCTOR CORP9QUALCOMM INC7Longitude Flash Memory Solutions Ltd2SUH YOUSEOK2
Top patents by PatentIndex Score
48 records- 0191US10038004B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 31, 2018·5 cites·17 claims
- 0291US7416940B1Methods for fabricating flash memory devicesSPANSION LLC·Filed 2006·Granted Aug 26, 2008·17 cites·25 claims
- 0390US10361215B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Jul 23, 2019·4 cites·18 claims
- 0490US9570458B2Gate fringing effect based channel formation for semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Feb 14, 2017·5 cites·14 claims
- 0586US7053445B1Memory device with barrier layerSPANSION LLC·Filed 2005·Granted May 30, 2006·11 cites·20 claims
- 0684US8692310B2Gate fringing effect based channel formation for semiconductor deviceSUH YOUSEOK·Filed 2009·Granted Apr 8, 2014·10 cites·14 claims
- 0783US10833017B2Contact for semiconductor deviceQUALCOMM INC·Filed 2016·Granted Nov 10, 2020·4 cites·12 claims
- 0883US10566341B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Feb 18, 2020·3 cites·12 claims
- 0979US9449690B2Modified local segmented self-boosting of memory cell channelsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 20, 2016·6 cites·19 claims
- 1076US11950412B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 1175US8638609B2Partial local self boosting for NANDLIN YA-FEN·Filed 2010·Granted Jan 28, 2014·6 cites·20 claims
- 1273US11069699B2NAND memory cell string having a stacked select gate structure and process for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Jul 20, 2021·0 cites·13 claims
- 1373US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 1472US10756101B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Aug 25, 2020·0 cites·20 claims
- 1571US7675104B2Integrated circuit memory system employing silicon rich layersSPANSION LLC·Filed 2006·Granted Mar 9, 2010·3 cites·10 claims
- 1663US11251189B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Feb 15, 2022·0 cites·24 claims
- 1759US11444201B2Leakage current reduction in polysilicon-on-active-edge structuresQUALCOMM INC·Filed 2020·Granted Sep 13, 2022·0 cites·18 claims
- 1859US7803680B2Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applicationsSPANSION LLC·Filed 2007·Granted Sep 28, 2010·1 cites·15 claims
- 1958US11901434B2Semiconductor having a source/drain contact with a single inner spacerQUALCOMM INC·Filed 2021·Granted Feb 13, 2024·0 cites·19 claims
- 2058US10297606B2Gate fringing effect based channel formation for semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted May 21, 2019·0 cites·12 claims
- 2157US9514824B2Partial local self boosting for NANDCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Dec 6, 2016·1 cites·16 claims
- 2256US7998846B23-D integrated circuit system and methodSPANSION LLC·Filed 2008·Granted Aug 16, 2011·0 cites·12 claims
- 2354US9276007B2System and method for manufacturing self-aligned STI with single polySPANSION LLC·Filed 2014·Granted Mar 1, 2016·0 cites·12 claims
- 2454US8208296B2Apparatus and method for extended nitride layer in a flash memoryTHURGATE TIMOTHY·Filed 2010·Granted Jun 26, 2012·1 cites·18 claims
- 2553US7907448B2Scaled down select gates of NAND flash memory cell strings and method of forming sameSPANSION LLC·Filed 2008·Granted Mar 15, 2011·2 cites·17 claims
- 2651US9190531B2Flash memory cell with flair gateSPANSION LLC·Filed 2012·Granted Nov 17, 2015·0 cites·13 claims
- 2751US8367537B2Flash memory cell with a flair gateSPANSION LLC·Filed 2007·Granted Feb 5, 2013·0 cites·5 claims
- 2851US7943980B2Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductur applicationsSPANSION LLC·Filed 2010·Granted May 17, 2011·0 cites·5 claims
- 2950US10622370B1System and method for manufacturing self-aligned STI with single polyMONTEREY RES LLC·Filed 2015·Granted Apr 14, 2020·0 cites·16 claims
- 3050US10600774B2Systems and methods for fabrication of gated diodes with selective epitaxial growthQUALCOMM INC·Filed 2018·Granted Mar 24, 2020·0 cites·21 claims
- 3150US7906395B2Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applicationsSPANSION LLC·Filed 2010·Granted Mar 15, 2011·0 cites·15 claims
- 3250US2023009977A1Source/drain contacts between transistor gates with abbreviated inner spacers for improved contact area and related method of fabricationQUALCOMM INC·Filed 2021·Application pending·0 cites
- 3349US7816724B2Memory device with barrier layerSPANSION LLC·Filed 2006·Granted Oct 19, 2010·0 cites·19 claims
- 3446US2022216328A1Gate-to-contact short prevention with an inner spacerQUALCOMM INC·Filed 2021·Application pending·0 cites
- 3546US2010322006A1Nand memory cell string having a stacked select gate structure and process for for forming sameKWAN MING SANG·Filed 2009·Application pending·0 cites
- 3644US2008150011A1Integrated circuit system with memory systemSPANSION LLC·Filed 2007·Application pending·0 cites
- 3743US8642441B1Self-aligned STI with single poly for manufacturing a flash memory deviceTHURGATE TIM·Filed 2006·Granted Feb 4, 2014·0 cites·12 claims
- 3843US7848146B2Partial local self-boosting of a memory cell channelSPANSION LLC·Filed 2009·Granted Dec 7, 2010·1 cites·20 claims
- 3942US2008096357A1Method for manufacturing a memory deviceADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 4042US2021143153A1Fin field-effect transistor (fet) (finfet) circuits employing replacement n-type fet (nfet) source/drain (s/d) to avoid or prevent short defects and related methods of fabricationQUALCOMM INC·Filed 2019·Application pending·0 cites
- 4142US2008149990A1Memory system with poly metal gateSPANSION LLC·Filed 2007·Application pending·0 cites
- 4241US2008150005A1Memory system with depletion gateSPANSION LLC·Filed 2007·Application pending·0 cites
- 4341US2008142874A1Integrated circuit system with implant oxideSPANSION LLC·Filed 2006·Application pending·0 cites
- 4441US2008150000A1Memory system with select gate eraseSPANSION LLC·Filed 2006·Application pending·0 cites
- 4540US8119477B2Memory system with protection layer to cover the memory gate stack and methods for forming sameSHIRAIWA HIDEHIKO·Filed 2006·Granted Feb 21, 2012·0 cites·20 claims
- 4640US2011272775A13d integrated circuit system and methodKIM EUNHA·Filed 2011·Application pending·0 cites
- 4739US2009261406A1Use of silicon-rich nitride in a flash memory deviceSUH YOUSEOK·Filed 2008·Application pending·0 cites
- 4837US8809936B2Memory cell system with multiple nitride layersXUE LEI·Filed 2006·Granted Aug 19, 2014·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →