Inventor · disambiguated record
Yoshifumi Tahara
Also filed as: TAHARA YOSHIFUMI
21 granted patents·3 pending applications·3,300 citations·filing 1988–2015
97Inventor score
Files withTOKYO ELECTRON LTD19ADVANTEST CORP3ADVANTEST AMERICA R & D CT INC1MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1
Top patents by PatentIndex Score
24 records- 0198US5571366APlasma processing apparatusTOKYO ELECTRON LTD·Filed 1994·Granted Nov 5, 1996·502 cites·21 claims
- 0297US5382311AStage having electrostatic chuck and plasma processing apparatus using sameTOKYO ELECTRON LTD·Filed 1993·Granted Jan 17, 1995·1k cites·20 claims
- 0397US4931135AEtching method and etching apparatusTOKYO ELECTRON LTD·Filed 1988·Granted Jun 5, 1990·449 cites·21 claims
- 0495US6110287APlasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 1997·Granted Aug 29, 2000·397 cites·2 claims
- 0593US5494522APlasma process system and methodTOKYO ELECTRON LTD·Filed 1994·Granted Feb 27, 1996·90 cites·6 claims
- 0691US7209851B2Method and structure to develop a test program for semiconductor integrated circuitsADVANTEST AMERICA R & D CT INC·Filed 2004·Granted Apr 24, 2007·60 cites·30 claims
- 0790US5356515ADry etching methodTOKYO ELECTRON LTD·Filed 1992·Granted Oct 18, 1994·139 cites·10 claims
- 0883US4963713ACooling of a plasma electrode system for an etching apparatusTOKYO ELECTRON LTD·Filed 1989·Granted Oct 16, 1990·55 cites·4 claims
- 0981US5449977AApparatus and method for generating plasma of uniform flux densityMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Sep 12, 1995·37 cites·13 claims
- 1081US5270266AMethod of adjusting the temperature of a semiconductor waferTOKYO ELECTRON LTD·Filed 1992·Granted Dec 14, 1993·75 cites·10 claims
- 1180US6423242B1Etching methodTOKYO ELECTRON LTD·Filed 1999·Granted Jul 23, 2002·58 cites·5 claims
- 1278US5411631ADry etching methodTOKYO ELECTRON LTD·Filed 1993·Granted May 2, 1995·66 cites·22 claims
- 1377US4978412APlasma processing deviceTOKYO ELECTRON LTD·Filed 1990·Granted Dec 18, 1990·61 cites·12 claims
- 1475US5698070AMethod of etching film formed on semiconductor waferTOKYO ELECTRON LTD·Filed 1993·Granted Dec 16, 1997·56 cites·47 claims
- 1574US5203958AProcessing method and apparatusTOKYO ELECTRON LTD·Filed 1991·Granted Apr 20, 1993·55 cites·24 claims
- 1673US5089083APlasma etching methodTOKYO ELECTRON LTD·Filed 1990·Granted Feb 18, 1992·53 cites·8 claims
- 1772US5302236AMethod of etching object to be processed including oxide or nitride portionTOKYO ELECTRON LTD·Filed 1991·Granted Apr 12, 1994·50 cites·11 claims
- 1859US5705081AEtching methodTOKYO ELECTRON LTD·Filed 1995·Granted Jan 6, 1998·24 cites·7 claims
- 1956US5155331AMethod for cooling a plasma electrode system for an etching apparatusTOKYO ELECTRON LTD·Filed 1990·Granted Oct 13, 1992·23 cites·13 claims
- 2048US2015058670A1Test programADVANTEST CORP·Filed 2014·Application pending·0 cites
- 2147US2015058671A1Test programADVANTEST CORP·Filed 2014·Application pending·0 cites
- 2245US5164034AApparatus and method for processing substrateTOKYO ELECTRON LTD·Filed 1991·Granted Nov 17, 1992·15 cites·11 claims
- 2336US2015127986A1Test program and test systemADVANTEST CORP·Filed 2015·Application pending·0 cites
- 2431US5858258APlasma processing methodTOKYO ELECTRON LTD·Filed 1992·Granted Jan 12, 1999·4 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →