Inventor · disambiguated record
Yoshinori Tsuchiya
Also filed as: TSUCHIYA YOSHINORI
64 granted patents·17 pending applications·241 citations·filing 2004–2022
98Inventor score
Top patents by PatentIndex Score
81 records- 0192US8367507B1Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2012·Granted Feb 5, 2013·14 cites·5 claims
- 0292US7807990B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 5, 2010·22 cites·20 claims
- 0392US7563678B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 21, 2009·21 cites·20 claims
- 0490US7485936B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Feb 3, 2009·16 cites·15 claims
- 0588US7964489B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jun 21, 2011·13 cites·16 claims
- 0687US8120117B2Semiconductor device with metal gateTSUCHIYA YOSHINORI·Filed 2009·Granted Feb 21, 2012·15 cites·8 claims
- 0787US7807538B2Method of forming a silicide layer while applying a compressive or tensile strain to impurity layersTOSHIBA KK·Filed 2007·Granted Oct 5, 2010·11 cites·9 claims
- 0887US7667273B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Feb 23, 2010·12 cites·10 claims
- 0987US7514753B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Apr 7, 2009·13 cites·9 claims
- 1087US7429777B2Semiconductor device with a gate electrode having a laminate structureTOSHIBA KK·Filed 2006·Granted Sep 30, 2008·10 cites·18 claims
- 1185US7456096B2Method of manufacturing silicide layer for semiconductor deviceTOSHIBA KK·Filed 2006·Granted Nov 25, 2008·8 cites·6 claims
- 1285US7391085B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jun 24, 2008·7 cites·10 claims
- 1384US10084052B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2015·Granted Sep 25, 2018·4 cites·12 claims
- 1481US7541657B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jun 2, 2009·6 cites·15 claims
- 1578US7432570B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Oct 7, 2008·5 cites·11 claims
- 1677US7863695B2Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMISTOSHIBA KK·Filed 2008·Granted Jan 4, 2011·5 cites·8 claims
- 1776US8174080B2Semiconductor deviceICHIHARA REIKA·Filed 2011·Granted May 8, 2012·2 cites·18 claims
- 1875US7429776B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 30, 2008·4 cites·21 claims
- 1974US10121663B2Semiconductor device and method for producing sameDENSO CORP·Filed 2015·Granted Nov 6, 2018·2 cites·3 claims
- 2073US7977182B2Method of manufacturing MISFET with low contact resistanceTOSHIBA KK·Filed 2008·Granted Jul 12, 2011·5 cites·17 claims
- 2173US7642165B2Semiconductor device and fabrication method thereofTOSHIBA KK·Filed 2007·Granted Jan 5, 2010·5 cites·8 claims
- 2272US7986014B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jul 26, 2011·2 cites·18 claims
- 2372US7416967B2Semiconductor device, and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Aug 26, 2008·3 cites·10 claims
- 2471US8053300B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 8, 2011·2 cites·11 claims
- 2571US7576397B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 18, 2009·2 cites·15 claims
- 2671US7410855B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 12, 2008·2 cites·19 claims
- 2769US7902612B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Mar 8, 2011·2 cites·13 claims
- 2868US7745888B2Method of making p-channel and n-channel MIS transistors using single film formation of TaCTOSHIBA KK·Filed 2008·Granted Jun 29, 2010·2 cites·11 claims
- 2968US7728394B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Jun 1, 2010·2 cites·11 claims
- 3067US10381469B2Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2014·Granted Aug 13, 2019·2 cites·12 claims
- 3167US7632728B2Method of forming TaC gate electrodes with crystal orientation ratio defining the work functionTOSHIBA KK·Filed 2008·Granted Dec 15, 2009·2 cites·11 claims
- 3267US7601623B2Method of manufacturing a semiconductor device with a gate electrode having a laminate structureTOSHIBA KK·Filed 2008·Granted Oct 13, 2009·2 cites·9 claims
- 3366US9105709B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2013·Granted Aug 11, 2015·1 cites·3 claims
- 3466US8669562B2Semiconductor device and method for manufacturing the sameTSUCHIYA YOSHINORI·Filed 2012·Granted Mar 11, 2014·1 cites·4 claims
- 3566US7727832B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jun 1, 2010·2 cites·18 claims
- 3665US8994034B2Semiconductor device and method of manufacturing the sameSHIMIZU TATSUO·Filed 2012·Granted Mar 31, 2015·1 cites·14 claims
- 3765US8587060B2Semiconductor device and method for manufacturing the sameTSUCHIYA YOSHINORI·Filed 2012·Granted Nov 19, 2013·1 cites·3 claims
- 3865US8357580B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jan 22, 2013·1 cites·7 claims
- 3965US8129792B2Semiconductor device and method for manufacturing the sameICHIHARA REIKA·Filed 2008·Granted Mar 6, 2012·3 cites·15 claims
- 4064US7608896B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 27, 2009·2 cites·18 claims
- 4163USRE47640ESemiconductor deviceTOSHIBA KK·Filed 2017·Granted Oct 8, 2019·0 cites·90 claims
- 4263US8766334B2Semiconductor device with low resistance gate electrode and method of manufacturing the sameTSUCHIYA YOSHINORI·Filed 2012·Granted Jul 1, 2014·1 cites·11 claims
- 4361USRE46271ESemiconductor deviceTOSHIBA KK·Filed 2014·Granted Jan 10, 2017·0 cites·47 claims
- 4461US7612413B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Nov 3, 2009·2 cites·15 claims
- 4559US8217440B2Semiconductor device and method of fabricating the sameTSUCHIYA YOSHINORI·Filed 2010·Granted Jul 10, 2012·1 cites·13 claims
- 4658US7763946B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 27, 2010·1 cites·13 claims
- 4757US8790983B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2014·Granted Jul 29, 2014·0 cites·9 claims
- 4857US7642604B2Semiconductor device and fabrication method of sameTOSHIBA KK·Filed 2008·Granted Jan 5, 2010·1 cites·3 claims
- 4956US2008308877A1Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2008·Application pending·0 cites
- 5055US8203189B2Semiconductor device including gate electrode having a laminate structure and plug electrically connected theretoTSUCHIYA YOSHINORI·Filed 2009·Granted Jun 19, 2012·0 cites·15 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →