Inventor · disambiguated record
Yuichi Egawa
Also filed as: EGAWA YUICHI
9 granted patents·4 pending applications·474 citations·filing 1992–2009
91Inventor score
Files withNIPPON STEEL CORP6UNITED MICROELECTRONICS CORP3RENESAS TECH CORP1TRECENTI TECHNOLOGIES INC1UNITED MICROELECTRONICS1
Top patents by PatentIndex Score
13 records- 0197US5436481AMOS-type semiconductor device and method of making the sameNIPPON STEEL CORP·Filed 1994·Granted Jul 25, 1995·184 cites·15 claims
- 0296US5424978ANon-volatile semiconductor memory cell capable of storing more than two different data and method of using the sameNIPPON STEEL CORP·Filed 1994·Granted Jun 13, 1995·176 cites·13 claims
- 0377US6917076B2Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jul 12, 2005·20 cites·16 claims
- 0465US6657229B1Semiconductor device having multiple transistors sharing a common gateUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 2, 2003·26 cites·9 claims
- 0559US6118145ASemiconductor device and manufacturing method thereofNIPPON STEEL CORP·Filed 1998·Granted Sep 12, 2000·17 cites·22 claims
- 0657US6066886ASemiconductor wafer in which redundant memory portion is shared by two neighboring semiconductor memory portions and is connected to the semiconductor memory portionsUNITED MICROELECTRONICS·Filed 1997·Granted May 23, 2000·18 cites·39 claims
- 0748US5313418ASemiconductor memory and memorizing method to read only semiconductor memoryNIPPON STEEL CORP·Filed 1992·Granted May 17, 1994·12 cites·16 claims
- 0846US5770874AHigh density semiconductor memory deviceNIPPON STEEL CORP·Filed 1997·Granted Jun 23, 1998·14 cites·17 claims
- 0946US2005242377A1Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 1043US2009179247A1Semiconductor deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 1139US5438214AMetal oxide semiconductor device having a common gate electrode for N and P channel MOS transistorsNIPPON STEEL CORP·Filed 1994·Granted Aug 1, 1995·7 cites·10 claims
- 1239US2004262494A1Solid-state imaging device and manufacturing method thereofTRECENTI TECHNOLOGIES INC·Filed 2004·Application pending·0 cites
- 1339US2004173866A1Photodiode and image sensorFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →