Inventor · disambiguated record
Yung-Cheng Lu
Also filed as: LU YUNG-CHENG
142 granted patents·50 pending applications·2,954 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD109TAIWAN SEMICONDUCTOR MFG45APPLIED MATERIALS INC21CHANG HUI-LIN4YU CHEN-HUA4
Top patents by PatentIndex Score
192 records- 0199US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0298US6627532B1Method of decreasing the K value in SiOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·358 cites·27 claims
- 0398US6602779B1Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 5, 2003·225 cites·15 claims
- 0497US11664441B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·4 cites·20 claims
- 0597US11437492B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 0697US11316034B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
- 0797US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 0897US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 0997US6448187B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Sep 10, 2002·98 cites·30 claims
- 1097US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 1196US11923432B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·4 cites·20 claims
- 1296US11916132B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 1396US11710782B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·20 claims
- 1496US11469229B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·3 cites·20 claims
- 1596US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 1696US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 1796US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 1896US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 1996US6245690B1Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jun 12, 2001·132 cites·20 claims
- 2095US9987720B2Method for operating a polishing head and method for polishing a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·7 cites·20 claims
- 2195US9352443B2Platen assembly, chemical-mechanical polisher, and method for polishing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 31, 2016·16 cites·19 claims
- 2295US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 2394US11107902B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·8 cites·20 claims
- 2493US12113113B2Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·2 cites·20 claims
- 2593US9768024B1Multi-layer mask and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·7 cites·20 claims
- 2693US6743737B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·39 cites·29 claims
- 2792US8053356B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·9 cites·19 claims
- 2892US6869896B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Mar 22, 2005·37 cites·16 claims
- 2991US11901439B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 3091US9236446B2Barc-assisted process for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·10 cites·20 claims
- 3191US7312531B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 25, 2007·22 cites·32 claims
- 3291US6784119B2Method of decreasing the K value in SIOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2003·Granted Aug 31, 2004·36 cites·20 claims
- 3390US11444177B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 3489US12255205B2Semiconductor device with isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 18, 2025·1 cites·20 claims
- 3589US11081402B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·3 cites·20 claims
- 3689US9917017B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·4 cites·20 claims
- 3789US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
- 3889US6806207B2Method of depositing low K filmsAPPLIED MATERIALS INC·Filed 2003·Granted Oct 19, 2004·34 cites·20 claims
- 3988US11756838B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
- 4088US11348917B2Semiconductor device with isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 4188US10515860B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·3 cites·20 claims
- 4288US9620628B1Methods of forming contact featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·5 cites·20 claims
- 4388US6756321B2Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constantTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·49 cites·19 claims
- 4487US6930061B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Aug 16, 2005·32 cites·25 claims
- 4586US10160091B2CMP polishing head design for improving removal rate uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·2 cites·20 claims
- 4686US6632735B2Method of depositing low dielectric constant carbon doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·37 cites·13 claims
- 4786US2025351528A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4885US12501697B2Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 4985US11342444B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 5085US7655556B2Interconnect structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 2, 2010·6 cites·10 claims
Showing the top 50 of 192 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →