Inventor · disambiguated record
Yuh-Jia Su
Also filed as: SU YUH-JIA · SU YUH-JIA JIM
20 granted patents·1 pending application·2,347 citations·filing 1993–2009
97Inventor score
Files withAPPLIED MATERIALS INC9APPLIED KOMATSU TECHNOLOGY INC5NOVELLUS SYSTEMS INC5CHEN DAVID L1SU MAY1
Top patents by PatentIndex Score
21 records- 0199US5589002AGas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcingAPPLIED MATERIALS INC·Filed 1994·Granted Dec 31, 1996·684 cites·28 claims
- 0298US5685914AFocus ring for semiconductor wafer processing in a plasma reactorAPPLIED MATERIALS INC·Filed 1994·Granted Nov 11, 1997·516 cites·19 claims
- 0397US5592358AElectrostatic chuck for magnetic flux processingAPPLIED MATERIALS INC·Filed 1994·Granted Jan 7, 1997·307 cites·28 claims
- 0495US5996218AMethod of forming an electrostatic chuck suitable for magnetic flux processingAPPLIED MATERIALS INC·Filed 1996·Granted Dec 7, 1999·160 cites·22 claims
- 0594US5507874AMethod of cleaning of an electrostatic chuck in plasma reactorsAPPLIED MATERIALS INC·Filed 1994·Granted Apr 16, 1996·131 cites·24 claims
- 0691US8058181B1Method for post-etch cleansCHEN DAVID L·Filed 2009·Granted Nov 15, 2011·42 cites·20 claims
- 0790US7569492B1Method for post-etch cleansNOVELLUS SYSTEMS INC·Filed 2008·Granted Aug 4, 2009·19 cites·16 claims
- 0886US6855225B1Single-tube interlaced inductively coupling plasma sourceNOVELLUS SYSTEMS INC·Filed 2003·Granted Feb 15, 2005·32 cites·14 claims
- 0984US6125788APlasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameterAPPLIED MATERIALS INC·Filed 1997·Granted Oct 3, 2000·64 cites·9 claims
- 1082US7390755B1Methods for post etch cleansNOVELLUS SYSTEMS INC·Filed 2002·Granted Jun 24, 2008·27 cites·15 claims
- 1181US5895937ATapered dielectric etch in semiconductor devicesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1997·Granted Apr 20, 1999·52 cites·17 claims
- 1281US5744049APlasma reactor with enhanced plasma uniformity by gas addition, and method of using sameAPPLIED MATERIALS INC·Filed 1994·Granted Apr 28, 1998·68 cites·25 claims
- 1381US5607602AHigh-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Mar 4, 1997·63 cites·28 claims
- 1480US5410122AUse of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambersAPPLIED MATERIALS INC·Filed 1993·Granted Apr 25, 1995·36 cites·13 claims
- 1579US6955177B1Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide lossNOVELLUS SYSTEMS INC·Filed 2001·Granted Oct 18, 2005·28 cites·45 claims
- 1674US7160813B1Etch back process approach in dual source plasma reactorsNOVELLUS SYSTEMS INC·Filed 2002·Granted Jan 9, 2007·22 cites·32 claims
- 1765US5843277ADry-etch of indium and tin oxides with C2H5I gasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Dec 1, 1998·30 cites·24 claims
- 1864US5528451AErosion resistant electrostatic chuckAPPLIED MATERIALS INC·Filed 1994·Granted Jun 18, 1996·34 cites·17 claims
- 1957US5893757ATapered profile etching methodAPPLIED KOMATSU TECHNOLOGY INC·Filed 1997·Granted Apr 13, 1999·21 cites·36 claims
- 2047US5728608ATapered dielectric etch in semiconductor devicesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Mar 17, 1998·11 cites·12 claims
- 2146US2008210168A1Single chamber, multiple tube high efficiency vertical furnace systemSU MAY·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →