Inventor · disambiguated record
Zhen Chen
Also filed as: CHEN ZHEN · CHEN ZHEN L · CHEN ZHEN-RONG
45 granted patents·14 pending applications·220 citations·filing 2004–2024
97Inventor score
Files withGLO AB10CHEN ZHEN5BOE TECHNOLOGY GROUP CO LTD4SANDISK TECHNOLOGIES LLC4UNIV BEIJING SCIENCE & TECHNOLOGY4
Top patents by PatentIndex Score
59 records- 0197US10553599B1Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layerSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 4, 2020·40 cites·12 claims
- 0295US8828884B2Multi-level contact to a 3D memory array and method of makingLEE YAO-SHENG·Filed 2012·Granted Sep 9, 2014·35 cites·14 claims
- 0393US10770620B2Epitaxial gallium nitride based light emitting diode and method of making thereofGLO AB·Filed 2019·Granted Sep 8, 2020·6 cites·5 claims
- 0493US8669585B1LED that has bounding silicon-doped regions on either side of a strain release layerCHEN ZHEN·Filed 2012·Granted Mar 11, 2014·20 cites·28 claims
- 0592US10290803B2Three-dimensional devices with wedge-shaped contact region and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 14, 2019·13 cites·15 claims
- 0692US9305935B2Multi-level contact to a 3D memory array and method of makingSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 5, 2016·9 cites·20 claims
- 0790US11968825B2Three-dimensional memory device containing on-pitch drain select level structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 23, 2024·2 cites·4 claims
- 0890US10290681B2Array of hole-type surround gate vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·8 cites·18 claims
- 0990US9230905B2Trench multilevel contact to a 3D memory array and method of making thereofSANDISK 3D LLC·Filed 2014·Granted Jan 5, 2016·13 cites·39 claims
- 1089US8686430B2Buffer layer for GaN-on-Si LEDCHEN ZHEN·Filed 2011·Granted Apr 1, 2014·12 cites·13 claims
- 1188US8994099B2Multi-level contact to a 3D memory array and method of makingSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 31, 2015·8 cites·6 claims
- 1286US11430830B2White light emitting diode (LED) and method of repairing light emitting device using sameGLO AB·Filed 2020·Granted Aug 30, 2022·2 cites·9 claims
- 1386US10822938B2Methods of optimizing well spacing for shale gas developmentUNIV BEIJING SCIENCE & TECHNOLOGY·Filed 2020·Granted Nov 3, 2020·3 cites·12 claims
- 1485US11264539B2Light emitting diodes containing deactivated regions and methods of making the sameGLO AB·Filed 2019·Granted Mar 1, 2022·3 cites·11 claims
- 1584US8653503B2Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloysUNIV CALIFORNIA·Filed 2012·Granted Feb 18, 2014·3 cites·20 claims
- 1682US9570657B2LED that has bounding silicon-doped regions on either side of a strain release layerTOSHIBA KK·Filed 2014·Granted Feb 14, 2017·4 cites·37 claims
- 1782US8395167B2External light efficiency of light emitting diodesKANG XUEJUN·Filed 2007·Granted Mar 12, 2013·12 cites·19 claims
- 1880US8084763B2Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloysCHUNG ROY B·Filed 2009·Granted Dec 27, 2011·8 cites·23 claims
- 1977US8395165B2Laterally contacted blue LED with superlattice current spreading layerCHEN ZHEN·Filed 2011·Granted Mar 12, 2013·3 cites·19 claims
- 2076US11069837B2Sub pixel light emitting diodes for direct view display and methods of making the sameGLO AB·Filed 2019·Granted Jul 20, 2021·2 cites·7 claims
- 2175US2024421246A1Light emitting diode containing pinhole masking layer and method of making thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2274US8865565B2LED having a low defect N-type layer that has grown on a silicon substrateCHEN ZHEN·Filed 2011·Granted Oct 21, 2014·4 cites·19 claims
- 2373US8357925B2Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloysUNIV CALIFORNIA·Filed 2011·Granted Jan 22, 2013·1 cites·27 claims
- 2471US11908974B2Light emitting diodes containing deactivated regions and methods of making the sameNANOSYS INC·Filed 2022·Granted Feb 20, 2024·0 cites·4 claims
- 2568US9159869B2LED on silicon substrate using zinc-sulfide as buffer layerTOSHIBA KK·Filed 2014·Granted Oct 13, 2015·2 cites·25 claims
- 2668US8120012B2Group III nitride white light emitting diodeCHUA SOO-JIN·Filed 2006·Granted Feb 21, 2012·3 cites·13 claims
- 2767US9012939B2N-type gallium-nitride layer having multiple conductive intervening layersCHEN ZHEN·Filed 2011·Granted Apr 21, 2015·3 cites·15 claims
- 2864US11264537B2Epitaxial gallium nitride based light emitting diode and method of making thereofGLO AB·Filed 2020·Granted Mar 1, 2022·0 cites·2 claims
- 2962US9690409B2Touch three-dimensional grating and display deviceBOE TECHNOLOGY GROUP CO LTD·Filed 2014·Granted Jun 27, 2017·1 cites·16 claims
- 3061US2021257510A1Light emitting diode containing pinhole masking layer and method of making thereofGLO AB·Filed 2021·Application pending·0 cites
- 3160US11362134B2Vertical stacks of light emitting diodes and control transistors and method of making thereofGLO AB·Filed 2020·Granted Jun 14, 2022·0 cites·6 claims
- 3259US12093721B2Method for processing data, electronic device and storage mediumBEIJING BAIDU NETCOM SCI & TECH CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·18 claims
- 3359US12074251B2Semiconductor device containing stress relaxation layer and method of making thereofGLO AB·Filed 2021·Granted Aug 27, 2024·0 cites·19 claims
- 3459US11695100B2Light emitting diode containing a grating and methods of making the sameGLO AB·Filed 2021·Granted Jul 4, 2023·0 cites·23 claims
- 3559US8994064B2Led that has bounding silicon-doped regions on either side of a strain release layerTOSHIBA KK·Filed 2014·Granted Mar 31, 2015·0 cites·38 claims
- 3656US2023223494A1Light emitting diodes and method of making thereof by selectively growing active layers from trench separated areasNANOSYS INC·Filed 2023·Application pending·0 cites
- 3755US2020119085A1Vertical stacks of light emitting diodes and control transistors and method of making thereofGLO AB·Filed 2019·Application pending·0 cites
- 3854US10936875B2Method and apparatus for detecting significance of promotional information, device and computer storage mediumBaidu online network technology beijing co ltd·Filed 2018·Granted Mar 2, 2021·0 cites·18 claims
- 3954US2010109018A1Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layerUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 4052US2024393937A1Method for playing back multimedia resource and terminalBEIJING DAJIA INTERNET INFORMATION TECH CO LTD·Filed 2024·Application pending·0 cites
- 4151US10508838B2Ultrahigh-performance radiative coolerUNIV LELAND STANFORD JUNIOR·Filed 2017·Granted Dec 17, 2019·0 cites·6 claims
- 4251US2023132423A1Light emitting diode array with inactive implanted isolation regions and methods of forming the sameNANOSYS INC·Filed 2022·Application pending·0 cites
- 4350US11919574B2Apparatuses and methods involving thermally tuned composite materialUNIV LELAND STANFORD JUNIOR·Filed 2019·Granted Mar 5, 2024·0 cites·20 claims
- 4450US2024411431A1Method for displaying multimedia resource, electronic device and storage mediumBEIJING DAJIA INTERNET INFORMATION TECH CO LTD·Filed 2023·Application pending·0 cites
- 4548US11611801B2Control method applied to electronic device and associated electronic device and processorREALTEK SEMICONDUCTOR CORP·Filed 2021·Granted Mar 21, 2023·0 cites·9 claims
- 4648US2024393923A1Method for playing video and electronic deviceBEIJING DAJIA INTERNET INFORMATION TECH CO LTD·Filed 2024·Application pending·0 cites
- 4745US11371344B2Method for identifying a medium structure coupling and a fracture network morphology of a shale gas reservoirUNIV BEIJING SCIENCE & TECHNOLOGY·Filed 2018·Granted Jun 28, 2022·0 cites·4 claims
- 4845US9739451B2Alignment device and alignment methodBOE TECHNOLOGY GROUP CO LTD·Filed 2015·Granted Aug 22, 2017·0 cites·16 claims
- 4945US2013032810A1Led on silicon substrate using zinc-sulfide as buffer layerBRIDGELUX INC·Filed 2011·Application pending·0 cites
- 5043US10204577B2Driving method, driving circuit and display apparatusBOE TECHNOLOGY GROUP CO LTD·Filed 2015·Granted Feb 12, 2019·0 cites·15 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →