Inventor · disambiguated record
Zhe Gui
Also filed as: GUI ZHE
17 granted patents·7 pending applications·156 citations·filing 2015–2025
93Inventor score
Top patents by PatentIndex Score
24 records- 0197US11894227B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2022·Granted Feb 6, 2024·4 cites·13 claims
- 0297US11608559B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2021·Granted Mar 21, 2023·6 cites·20 claims
- 0397US10325773B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2015·Granted Jun 18, 2019·22 cites·17 claims
- 0497US9837270B1Densification of silicon carbide film using remote plasma treatmentLAM RES CORP·Filed 2016·Granted Dec 5, 2017·62 cites·19 claims
- 0596US12359311B2Conformal deposition of silicon carbide films using heterogeneous precursor interactionLAM RES CORP·Filed 2023·Granted Jul 15, 2025·4 cites·15 claims
- 0696US10297442B2Remote plasma based deposition of graded or multi-layered silicon carbide filmLAM RES CORP·Filed 2016·Granted May 21, 2019·22 cites·20 claims
- 0795US11264234B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2019·Granted Mar 1, 2022·10 cites·20 claims
- 0894US12116669B2Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2021·Granted Oct 15, 2024·3 cites·18 claims
- 0994US11101164B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2020·Granted Aug 24, 2021·3 cites·24 claims
- 1093US12000047B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2023·Granted Jun 4, 2024·1 cites·20 claims
- 1193US10604841B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2016·Granted Mar 31, 2020·7 cites·24 claims
- 1290US11015247B2Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2018·Granted May 25, 2021·6 cites·14 claims
- 1387US12331402B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1486US12334332B2Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursorsLAM RES CORP·Filed 2018·Granted Jun 17, 2025·4 cites·18 claims
- 1585US12272547B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2023·Granted Apr 8, 2025·0 cites·9 claims
- 1681US2025003074A1Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2024·Application pending·0 cites
- 1770US11702748B2Wafer level uniformity control in remote plasma film depositionLAM RES CORP·Filed 2017·Granted Jul 18, 2023·1 cites·8 claims
- 1870US10319582B2Methods and apparatus for depositing silicon oxide on metal layersLAM RES CORP·Filed 2017·Granted Jun 11, 2019·1 cites·18 claims
- 1969US2023304156A1Wafer level uniformity control in remote plasma film depositionLAM RES CORP·Filed 2023·Application pending·0 cites
- 2064US2025149328A1Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursorsLAM RES CORP·Filed 2025·Application pending·0 cites
- 2154US2025207246A1Reducing capacitance in semiconductor devicesLAM RES CORP·Filed 2023·Application pending·0 cites
- 2253US2025132127A1Transformer coupled plasma source design for thin dielectric film depositionLAM RES CORP·Filed 2022·Application pending·0 cites
- 2352US2018347035A1Conformal deposition of silicon carbide films using heterogeneous precursor interactionLAM RES CORP·Filed 2018·Application pending·0 cites
- 2448US2023223238A1Increasing plasma uniformity in a receptacleLAM RES CORP·Filed 2021·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Zhe Gui files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →