Inventor · disambiguated record
Zhida Lan
Also filed as: LAN ZHIDA
21 granted patents·5 pending applications·152 citations·filing 2002–2016
94Inventor score
Top patents by PatentIndex Score
26 records- 0190US8693233B2Re-writable resistance-switching memory with balanced series stackSCHEUERLEIN ROY E·Filed 2012·Granted Apr 8, 2014·13 cites·20 claims
- 0290US6847047B2Methods that facilitate control of memory arrays utilizing zener diode-like devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 25, 2005·47 cites·40 claims
- 0385US7273766B1Variable density and variable persistent organic memory devices, methods, and fabricationSPANSION LLC·Filed 2005·Granted Sep 25, 2007·11 cites·28 claims
- 0480US8861258B2Set/reset algorithm which detects and repairs weak cells in resistive-switching memory deviceSANDISK 3D LLC·Filed 2013·Granted Oct 14, 2014·7 cites·24 claims
- 0578US9704920B2Resistive random access memory containing a steering element and a tunneling dielectric elementSANDISK 3D LLC·Filed 2015·Granted Jul 11, 2017·3 cites·19 claims
- 0676US6960783B2Erasing and programming an organic memory device and method of fabricatingADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 1, 2005·23 cites·23 claims
- 0773US9269425B2Low forming voltage non-volatile storage deviceSANDISK 3D LLC·Filed 2012·Granted Feb 23, 2016·4 cites·19 claims
- 0871US7344913B1Spin on memory cell active layer doped with metal ionsSPANSION LLC·Filed 2005·Granted Mar 18, 2008·3 cites·20 claims
- 0968US6943370B2Control of memory arrays utilizing zener diode-like devicesADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 13, 2005·11 cites·33 claims
- 1066US8879299B2Non-volatile memory cell containing an in-cell resistorHOU KUN·Filed 2012·Granted Nov 4, 2014·4 cites·21 claims
- 1165US7450416B1Utilization of memory-diode which may have each of a plurality of different memory statesSPANSION LLC·Filed 2004·Granted Nov 11, 2008·13 cites·37 claims
- 1257US9576660B2Low forming voltage non-volatile storage deviceSANDISK 3D LLC·Filed 2016·Granted Feb 21, 2017·1 cites·7 claims
- 1357US8098521B2Method of providing an erase activation energy of a memory deviceVANBUSKIRK MICHAEL A·Filed 2005·Granted Jan 17, 2012·1 cites·3 claims
- 1457US7259039B2Memory device and methods of using and making the deviceSPANSION LLC·Filed 2004·Granted Aug 21, 2007·7 cites·19 claims
- 1554US8717803B2Metal-insulator-metal-insulator-metal (MIMIM) memory deviceRATHOR MANUJ·Filed 2011·Granted May 6, 2014·1 cites·5 claims
- 1652US8093680B1Metal-insulator-metal-insulator-metal (MIMIM) memory deviceRATHOR MANUJ·Filed 2006·Granted Jan 10, 2012·2 cites·15 claims
- 1750US8373148B2Memory device with improved performanceSPANSION LLC·Filed 2007·Granted Feb 12, 2013·0 cites·8 claims
- 1848US8709891B2Method and system for utilizing Perovskite material for charge storage and as a dielectricLAN ZHIDA·Filed 2013·Granted Apr 29, 2014·0 cites·10 claims
- 1948US7830015B2Memory device with improved data retentionSPANSION LLC·Filed 2005·Granted Nov 9, 2010·1 cites·16 claims
- 2043US7968464B2Memory device with improved data retentionSPANSION LLC·Filed 2010·Granted Jun 28, 2011·0 cites·14 claims
- 2142US2012195097A1Method and system for utilizing perovskite material for charge storage and as a dielectricLAN ZHIDA·Filed 2012·Application pending·0 cites
- 2241US2013292634A1Resistance-switching memory cells having reduced metal migration and low current operation and methods of forming the sameCHEN YUNG-TIN·Filed 2012·Application pending·0 cites
- 2340US2012195098A1Method and system for utilizing perovskite material for charge storage and as a dielectricLAN ZHIDA·Filed 2011·Application pending·0 cites
- 2439US2006113524A1Polymer-based transistor devices, methods, and systemsBILL COLIN·Filed 2004·Application pending·0 cites
- 2536US9472758B2High endurance non-volatile storageSANDISK 3D LLC·Filed 2014·Granted Oct 18, 2016·0 cites·18 claims
- 2635US2012092924A1Method of providing an erase activation energy of a memory deviceVANBUSKIRK MICHAEL A·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →