Inventor · disambiguated record

Zhi-Chang Lin

Also filed as: Lin zhi-chang

129 granted patents·55 pending applications·190 citations·filing 2013–2025

99Inventor score

Technology areasH10P H10D H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD182 TAIWAN SEMICONDUCTOR MFG1 TAIWAN SEMICONDUCTOR MFG CO LID1

Top patents by PatentIndex Score

184 records

0199US11581224B2Method for forming long channel back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·8 cites·20 claims
0298US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
0398US11616062B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·7 cites·20 claims
0498US11545400B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·4 cites·20 claims
0598US11502187B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·3 cites·20 claims
0698US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
0798US11245036B1Latch-up preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·20 claims
0898US10490458B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·18 cites·20 claims
0997US12342616B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·2 cites·20 claims
1097US11967594B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
1197US11450663B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
1297US11328963B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·3 cites·20 claims
1397US10861752B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·9 cites·20 claims
1496US12272690B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·2 cites·20 claims
1595US11916122B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
1695US11398550B2Semiconductor device with facet S/D feature and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·3 cites·20 claims
1795US11264502B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·3 cites·20 claims
1894US12074204B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·2 cites·20 claims
1994US11848326B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·2 cites·20 claims
2094US10825918B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·6 cites·20 claims
2194US9564363B1Method of forming butted contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·12 cites·20 claims
2293US10872891B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·5 cites·20 claims
2392US11217585B2Forming dielectric dummy fins with different heights in different regions of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·5 cites·20 claims
2492US10388771B1Method and device for forming cut-metal-gate featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·5 cites·20 claims
2592US10269914B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·6 cites·20 claims
2692US9153668B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·9 cites·20 claims
2791US12009253B2Semiconductor structure with staggered selective growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 11, 2024·2 cites·20 claims
2891US11450754B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
2991US11417777B2Enlargement of GAA nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
3091US11152267B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 19, 2021·4 cites·20 claims
3191US2025329537A1Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3291US2025359288A1Multi-Gate Device And Related MethodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3390US11791401B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·2 cites·20 claims
3490US11309424B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
3589US12347690B2Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
3689US9627385B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·4 cites·20 claims
3789US2025386593A1Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3888US12484295B2Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
3988US12342587B2Integrated circuit with nanostructure transistors and bottom dielectric insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·1 cites·20 claims
4088US12317540B2Method for manufacturing semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·1 cites·20 claims
4188US11710774B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
4288US10930763B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
4388US2025311419A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4487US2025359145A1Semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4587US2025359297A1Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4686US12453173B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
4786US12439680B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
4886US11081356B2Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·2 cites·20 claims
4986US11075201B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
5086US2025351580A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 184 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →