Inventor · disambiguated record
Zhijiong Luo
Also filed as: LUO ZHIJIONG
192 granted patents·59 pending applications·1,324 citations·filing 2004–2021
99Inventor score
Top patents by PatentIndex Score
251 records- 0199US8841777B2Bonded structure employing metal semiconductor alloy bondingFAROOQ MUKTA G·Filed 2010·Granted Sep 23, 2014·216 cites·16 claims
- 0298US8835316B2Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistorYIN HAIZHOU·Filed 2011·Granted Sep 16, 2014·77 cites·9 claims
- 0398US7759206B2Methods of forming semiconductor devices using embedded L-shape spacersIBM·Filed 2005·Granted Jul 20, 2010·118 cites·9 claims
- 0497US7564081B2finFET structure with multiply stressed gate electrodeIBM·Filed 2005·Granted Jul 21, 2009·49 cites·9 claims
- 0596US7718500B2Formation of raised source/drain structures in NFET with embedded SiGe in PFETCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted May 18, 2010·53 cites·22 claims
- 0695US8017487B2Method to control source/drain stressor profiles for stress engineeringGLOBALFOUNDRIES SG PTE LTD·Filed 2006·Granted Sep 13, 2011·37 cites·21 claims
- 0794US8674449B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·19 cites·13 claims
- 0894US7279758B1N-channel MOSFETs comprising dual stressors, and methods for forming the sameIBM·Filed 2006·Granted Oct 9, 2007·24 cites·7 claims
- 0993US9087691B2Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 21, 2015·14 cites·11 claims
- 1093US8450775B2Method to control source/drain stressor profiles for stress engineeringCHONG YUNG FU·Filed 2011·Granted May 28, 2013·18 cites·20 claims
- 1193US8450813B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2010·Granted May 28, 2013·17 cites·20 claims
- 1293US7413961B2Method of fabricating a transistor structureCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Aug 19, 2008·22 cites·22 claims
- 1392US8803208B2Method for fabricating contact electrode and semiconductor deviceZHU HUILONG·Filed 2011·Granted Aug 12, 2014·13 cites·8 claims
- 1492US8748288B2Bonded structure with enhanced adhesion strengthFAROOQ MUKTA G·Filed 2010·Granted Jun 10, 2014·12 cites·12 claims
- 1592US7939413B2Embedded stressor structure and processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 10, 2011·27 cites·27 claims
- 1692US7067368B1Method for forming self-aligned dual salicide in CMOS technologiesIBM·Filed 2005·Granted Jun 27, 2006·17 cites·10 claims
- 1791US8669155B2Hybrid channel semiconductor device and method for forming the sameYIN HAIZHOU·Filed 2011·Granted Mar 11, 2014·14 cites·8 claims
- 1891US7572712B2Method to form selective strained Si using lateral epitaxyCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Aug 11, 2009·19 cites·32 claims
- 1990US8728881B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted May 20, 2014·11 cites·6 claims
- 2090US8288825B2Formation of raised source/drain structures in NFET with embedded SiGe in PFETCHONG YUNG FU·Filed 2010·Granted Oct 16, 2012·13 cites·24 claims
- 2189US8232178B2Method for forming a semiconductor device with stressed trench isolationYIN HAIZHOU·Filed 2011·Granted Jul 31, 2012·10 cites·9 claims
- 2289US7960798B2Structure and method to form multilayer embedded stressorsIBM·Filed 2009·Granted Jun 14, 2011·11 cites·10 claims
- 2389US7897468B1Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded islandIBM·Filed 2009·Granted Mar 1, 2011·15 cites·21 claims
- 2489US7485524B2MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the sameIBM·Filed 2006·Granted Feb 3, 2009·17 cites·1 claims
- 2588US8729638B2Method for making FINFETs and semiconductor structures formed therefromZHU HUILONG·Filed 2011·Granted May 20, 2014·9 cites·8 claims
- 2688US7618866B2Structure and method to form multilayer embedded stressorsIBM·Filed 2006·Granted Nov 17, 2009·11 cites·9 claims
- 2788US7482656B2Method and structure to form self-aligned selective-SOIIBM·Filed 2006·Granted Jan 27, 2009·15 cites·18 claims
- 2887US8642471B2Semiconductor structure and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Feb 4, 2014·9 cites·12 claims
- 2987US8058157B2FinFET structure with multiply stressed gate electrodeZHU HUILONG·Filed 2009·Granted Nov 15, 2011·11 cites·17 claims
- 3087US7718513B2Forming silicided gate and contacts from polysilicon germanium and structure formedIBM·Filed 2007·Granted May 18, 2010·14 cites·6 claims
- 3186US8643061B2Structure of high-K metal gate semiconductor transistorYIN HAIZHOU·Filed 2010·Granted Feb 4, 2014·8 cites·20 claims
- 3286US8587066B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2012·Granted Nov 19, 2013·7 cites·19 claims
- 3386US7691690B2Methods for forming dual fully silicided gates over fins of FinFet devicesIBM·Filed 2007·Granted Apr 6, 2010·12 cites·10 claims
- 3485US8546910B2Semiconductor structure and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Oct 1, 2013·7 cites·10 claims
- 3584US10403342B2Hybrid flash memory structureASPIRING SKY CO LTD·Filed 2018·Granted Sep 3, 2019·6 cites·19 claims
- 3684US10354716B2SRAM based memory structures and methods thereofASPIRING SKY CO LTD·Filed 2017·Granted Jul 16, 2019·5 cites·13 claims
- 3784US8969930B2Gate stack structure, semiconductor device and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Mar 3, 2015·7 cites·8 claims
- 3884US8673704B2FinFET and method for manufacturing the sameZHU HUILONG·Filed 2012·Granted Mar 18, 2014·7 cites·10 claims
- 3984US8441050B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2011·Granted May 14, 2013·7 cites·13 claims
- 4084US8138029B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2010·Granted Mar 20, 2012·6 cites·19 claims
- 4184US8105887B2Inducing stress in CMOS deviceLUO ZHIJIONG·Filed 2009·Granted Jan 31, 2012·9 cites·7 claims
- 4284US7646039B2SOI field effect transistor having asymmetric junction leakageIBM·Filed 2007·Granted Jan 12, 2010·9 cites·13 claims
- 4383US7666721B2SOI substrates and SOI devices, and methods for forming the sameIBM·Filed 2006·Granted Feb 23, 2010·10 cites·14 claims
- 4483US7442619B2Method of forming substantially L-shaped silicide contact for a semiconductor deviceIBM·Filed 2006·Granted Oct 28, 2008·9 cites·2 claims
- 4582US11514136B2Circuit for neural network convolutional calculation of variable feature and kernel sizesASPIRING SKY CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·18 claims
- 4682US8981454B2Non-volatile memory device using finfet and method for manufacturing the sameZHU HUILONG·Filed 2010·Granted Mar 17, 2015·6 cites·11 claims
- 4782US8658507B2MOSFET structure and method of fabricating the same using replacement channel layerZHU HUILONG·Filed 2010·Granted Feb 25, 2014·6 cites·16 claims
- 4882US8541280B2Semiconductor structure and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Sep 24, 2013·6 cites·11 claims
- 4982US8497197B2Method for manufacturing a high-performance semiconductor structure with a replacement gate process and a stress memorization techniqueZHU HUILONG·Filed 2010·Granted Jul 30, 2013·5 cites·11 claims
- 5082US8445973B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2010·Granted May 21, 2013·6 cites·19 claims
Showing the top 50 of 251 patent records by PatentIndex Score.
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