Inventor · disambiguated record
Zhibin Ren
Also filed as: REN ZHIBIN
46 granted patents·9 pending applications·1,077 citations·filing 2004–2022
98Inventor score
Top patents by PatentIndex Score
55 records- 0198US8236661B2Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakageDENNARD ROBERT H·Filed 2009·Granted Aug 7, 2012·134 cites·6 claims
- 0298US7459752B2Ultra thin body fully-depleted SOI MOSFETsIBM·Filed 2006·Granted Dec 2, 2008·283 cites·18 claims
- 0397US8043920B2finFETS and methods of making sameIBM·Filed 2009·Granted Oct 25, 2011·91 cites·12 claims
- 0497US8012820B2Ultra-thin SOI CMOS with raised epitaxial source and drain and embedded SiGe PFET extensionIBM·Filed 2011·Granted Sep 6, 2011·38 cites·13 claims
- 0597US7968459B2Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistorsIBM·Filed 2008·Granted Jun 28, 2011·104 cites·21 claims
- 0697US7002214B1Ultra-thin body super-steep retrograde well (SSRW) FET devicesIBM·Filed 2004·Granted Feb 21, 2006·160 cites·20 claims
- 0795US8575699B2Thin box metal backgate extremely thin SOI deviceIBM·Filed 2013·Granted Nov 5, 2013·17 cites·13 claims
- 0894US7955928B2Structure and method of fabricating FinFETIBM·Filed 2009·Granted Jun 7, 2011·32 cites·29 claims
- 0993US7183613B1Method and structure for enhancing both NMOSFET and PMOSFET performance with a stressed filmIBM·Filed 2005·Granted Feb 27, 2007·22 cites·2 claims
- 1092US9634084B1Conformal buffer layer in source and drain regions of fin-type transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 1190US7648868B2Metal-gated MOSFET devices having scaled gate stack thicknessIBM·Filed 2007·Granted Jan 19, 2010·15 cites·20 claims
- 1289US8410544B2finFETs and methods of making sameCHAN KEVIN K·Filed 2011·Granted Apr 2, 2013·10 cites·20 claims
- 1388US8338292B2Body contacts for FET in SOI SRAM arrayTAN YUE·Filed 2010·Granted Dec 25, 2012·11 cites·11 claims
- 1488US8198673B2Asymmetric epitaxy and application thereofYIN HAIZHOU·Filed 2011·Granted Jun 12, 2012·8 cites·8 claims
- 1586US7993995B2Metal-gated MOSFET devices having scaled gate stack thickness including gettering species in a buried oxideIBM·Filed 2010·Granted Aug 9, 2011·7 cites·14 claims
- 1686US7384851B2Buried stress isolation for high-performance CMOS technologyIBM·Filed 2005·Granted Jun 10, 2008·11 cites·18 claims
- 1785US7374998B2Selective incorporation of charge for transistor channelsIBM·Filed 2006·Granted May 20, 2008·11 cites·16 claims
- 1885US7091069B2Ultra thin body fully-depleted SOI MOSFETsIBM·Filed 2004·Granted Aug 15, 2006·32 cites·13 claims
- 1984US8431994B2Thin-BOX metal backgate extremely thin SOI deviceCHAN KEVIN K·Filed 2010·Granted Apr 30, 2013·6 cites·13 claims
- 2084US8314463B2Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the methodCAI JIN·Filed 2009·Granted Nov 20, 2012·9 cites·25 claims
- 2183US7704839B2Buried stress isolation for high-performance CMOS technologyIBM·Filed 2008·Granted Apr 27, 2010·8 cites·26 claims
- 2282US7396776B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2006·Granted Jul 8, 2008·7 cites·1 claims
- 2381US8946028B2Merged FinFETs and method of manufacturing the sameCHAN KEVIN K·Filed 2009·Granted Feb 3, 2015·8 cites·18 claims
- 2481US8288826B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)CHOU ANTHONY I·Filed 2011·Granted Oct 16, 2012·4 cites·18 claims
- 2577US7989297B2Asymmetric epitaxy and application thereofIBM·Filed 2009·Granted Aug 2, 2011·5 cites·20 claims
- 2677US7326997B2Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed filmIBM·Filed 2006·Granted Feb 5, 2008·5 cites·5 claims
- 2776US8329564B2Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the methodCAI JIN·Filed 2007·Granted Dec 11, 2012·5 cites·18 claims
- 2873US8546920B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2012·Granted Oct 1, 2013·2 cites·17 claims
- 2972US7659583B2Ultrathin SOI CMOS devices employing differential STI linersIBM·Filed 2007·Granted Feb 9, 2010·4 cites·12 claims
- 3071US7494886B2Uniaxial strain relaxation of biaxial-strained thin films using ion implantationIBM·Filed 2007·Granted Feb 24, 2009·3 cites·17 claims
- 3170US7476579B2Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed filmIBM·Filed 2006·Granted Jan 13, 2009·3 cites·4 claims
- 3268US8637381B2High-k dielectric and silicon nitride box regionLEOBANDUNG EFFENDI·Filed 2011·Granted Jan 28, 2014·2 cites·12 claims
- 3367US7955950B2Semiconductor-on-insulator substrate with a diffusion barrierIBM·Filed 2007·Granted Jun 7, 2011·2 cites·12 claims
- 3463US8202780B2Method for manufacturing a FinFET device comprising a mask to define a gate perimeter and another mask to define fin regionsREN ZHIBIN·Filed 2009·Granted Jun 19, 2012·3 cites·19 claims
- 3562US8021956B2Ultrathin SOI CMOS devices employing differential STI linersIBM·Filed 2010·Granted Sep 20, 2011·1 cites·8 claims
- 3658US8149998B2Method, system and device for playing enterprise color ringback toneLI GUIHUA·Filed 2009·Granted Apr 3, 2012·2 cites·13 claims
- 3753US8053373B2Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2008·Granted Nov 8, 2011·0 cites·17 claims
- 3853US7687863B2Selective incorporation of charge for transistor channelsIBM·Filed 2008·Granted Mar 30, 2010·0 cites·7 claims
- 3952US11556763B2Multi-kernel configuration for convolutional neural networksIBM·Filed 2019·Granted Jan 17, 2023·0 cites·20 claims
- 4052US2009289305A1Ultra-thin soi cmos with raised epitaxial source and drain and embedded sige pfet extensionIBM·Filed 2009·Application pending·0 cites
- 4150US11537863B2Resistive processing unit cell having multiple weight update and read circuits for parallel processing of data using shared weight valueIBM·Filed 2019·Granted Dec 27, 2022·0 cites·20 claims
- 4250US11250316B2Aggregate adjustments in a cross bar neural networkIBM·Filed 2018·Granted Feb 15, 2022·0 cites·15 claims
- 4350US8809187B2Body contacts for FET in SOI SRAM arrayTAN YUE·Filed 2012·Granted Aug 19, 2014·0 cites·7 claims
- 4450US2007257315A1Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistorsIBM·Filed 2006·Application pending·0 cites
- 4549US2013285117A1CMOS WITH SiGe CHANNEL PFETs AND METHOD OF FABRICATIONMAJUMDAR AMLAN·Filed 2012·Application pending·0 cites
- 4649US2012168864A1Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakageDENNARD ROBERT H·Filed 2012·Application pending·0 cites
- 4749US2013285118A1CMOS WITH SiGe CHANNEL PFETs AND METHOD OF FABRICATIONMAJUMDAR AMLAN·Filed 2012·Application pending·0 cites
- 4848US2008217686A1Ultra-thin soi cmos with raised epitaxial source and drain and embedded sige pfet extensionIBM·Filed 2007·Application pending·0 cites
- 4946US7776624B2Method for improving semiconductor surfacesIBM·Filed 2008·Granted Aug 17, 2010·0 cites·9 claims
- 5042US2024005080A1Dummy metal fill design for parasitic capacitance reductionIBM·Filed 2022·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →