Inventor · disambiguated record
Zuoguang Liu
Also filed as: LIU ZUOGUANG
150 granted patents·5 pending applications·1,114 citations·filing 2012–2024
99Inventor score
Top patents by PatentIndex Score
155 records- 0199US9496225B1Recessed metal liner contact with copper fillIBM·Filed 2016·Granted Nov 15, 2016·409 cites·10 claims
- 0299US9318581B1Forming wrap-around silicide contact on finFETIBM·Filed 2015·Granted Apr 19, 2016·82 cites·11 claims
- 0398US10566246B1Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devicesIBM·Filed 2018·Granted Feb 18, 2020·41 cites·16 claims
- 0498US10056289B1Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2017·Granted Aug 21, 2018·44 cites·14 claims
- 0598US9805989B1Sacrificial cap for forming semiconductor contactIBM·Filed 2016·Granted Oct 31, 2017·29 cites·20 claims
- 0698US9608069B1Self aligned epitaxial based punch through controlIBM·Filed 2016·Granted Mar 28, 2017·20 cites·20 claims
- 0798US9397197B1Forming wrap-around silicide contact on finFETIBM·Filed 2015·Granted Jul 19, 2016·28 cites·9 claims
- 0897US10084094B1Wrapped source/drain contacts with enhanced areaIBM·Filed 2017·Granted Sep 25, 2018·17 cites·5 claims
- 0997US10020381B1Embedded bottom metal contact formed by a self-aligned contact process for vertical transistorsIBM·Filed 2017·Granted Jul 10, 2018·17 cites·4 claims
- 1097US9768077B1Low resistance dual liner contacts for Fin Field-Effect Transistors (FinFETs)IBM·Filed 2016·Granted Sep 19, 2017·21 cites·13 claims
- 1197US9768085B1Top contact resistance measurement in vertical FETsIBM·Filed 2016·Granted Sep 19, 2017·17 cites·14 claims
- 1297US9508597B13D fin tunneling field effect transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 29, 2016·19 cites·15 claims
- 1397US9484256B1Pure boron for silicide contactIBM·Filed 2015·Granted Nov 1, 2016·13 cites·12 claims
- 1497US9455317B1Nanowire semiconductor device including lateral-etch barrier regionIBM·Filed 2015·Granted Sep 27, 2016·14 cites·9 claims
- 1596US9978750B1Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2017·Granted May 22, 2018·11 cites·17 claims
- 1696US9972682B2Low resistance source drain contact formationIBM·Filed 2016·Granted May 15, 2018·13 cites·16 claims
- 1796US9806155B1Split fin field effect transistor enabling back bias on fin type field effect transistorsIBM·Filed 2016·Granted Oct 31, 2017·13 cites·15 claims
- 1896US9704754B1Self-aligned spacer for cut-last transistor fabricationIBM·Filed 2016·Granted Jul 11, 2017·13 cites·20 claims
- 1996US9673293B1Airgap spacersIBM·Filed 2016·Granted Jun 6, 2017·10 cites·11 claims
- 2096US9190466B2Independent gate vertical FinFET structureIBM·Filed 2013·Granted Nov 17, 2015·19 cites·8 claims
- 2195US9917060B1Forming a contact for a semiconductor deviceIBM·Filed 2016·Granted Mar 13, 2018·11 cites·19 claims
- 2295US9680020B2Increased contact area for FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 13, 2017·10 cites·16 claims
- 2395US9502309B1Forming CMOSFET structures with different contact linersIBM·Filed 2015·Granted Nov 22, 2016·10 cites·12 claims
- 2495US9484431B1Pure boron for silicide contactIBM·Filed 2015·Granted Nov 1, 2016·8 cites·7 claims
- 2594US9893171B2Fin field effect transistor fabrication and devices having inverted T-shaped gateIBM·Filed 2016·Granted Feb 13, 2018·7 cites·14 claims
- 2694US9412641B1FinFET having controlled dielectric region heightIBM·Filed 2015·Granted Aug 9, 2016·10 cites·18 claims
- 2794US9331146B2Silicon nanowire formation in replacement metal gate processIBM·Filed 2014·Granted May 3, 2016·12 cites·12 claims
- 2893US9871041B1Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistorsIBM·Filed 2016·Granted Jan 16, 2018·8 cites·14 claims
- 2993US9805973B2Dual silicide liner flow for enabling low contact resistanceIBM·Filed 2015·Granted Oct 31, 2017·6 cites·16 claims
- 3093US9362407B1Symmetrical extension junction formation with low-K spacer and dual epitaxial process in FinFET deviceIBM·Filed 2015·Granted Jun 7, 2016·9 cites·10 claims
- 3193US9252145B2Independent gate vertical FinFET structureIBM·Filed 2015·Granted Feb 2, 2016·8 cites·7 claims
- 3292US11545624B2Phase change memory cell resistive linerIBM·Filed 2021·Granted Jan 3, 2023·2 cites·25 claims
- 3392US11404560B2Punch through stopper in bulk finFET deviceTESSERA LLC·Filed 2020·Granted Aug 2, 2022·2 cites·16 claims
- 3492US10381262B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2018·Granted Aug 13, 2019·6 cites·18 claims
- 3592US9559191B2Punch through stopper in bulk finFET deviceIBM·Filed 2014·Granted Jan 31, 2017·6 cites·9 claims
- 3691US9620644B2Composite spacer enabling uniform doping in recessed fin devicesIBM·Filed 2015·Granted Apr 11, 2017·5 cites·14 claims
- 3791US9570574B1Recessed metal liner contact with copper fillIBM·Filed 2016·Granted Feb 14, 2017·6 cites·14 claims
- 3891US2025142855A1Punch through stopper in bulk finfet deviceADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2024·Application pending·0 cites
- 3990US10957605B2VFET device design for top contact resistance measurementIBM·Filed 2019·Granted Mar 23, 2021·4 cites·20 claims
- 4090US10354930B2S/D contact resistance measurement on FinFETsIBM·Filed 2016·Granted Jul 16, 2019·6 cites·20 claims
- 4190US10224417B2Fin field effect transistor fabrication and devices having inverted T-shaped gateIBM·Filed 2017·Granted Mar 5, 2019·4 cites·20 claims
- 4290US10020400B2Airgap spacersIBM·Filed 2017·Granted Jul 10, 2018·4 cites·20 claims
- 4390US9595597B1Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drainIBM·Filed 2015·Granted Mar 14, 2017·5 cites·14 claims
- 4489US9502523B1Nanowire semiconductor device including lateral-etch barrier regionIBM·Filed 2015·Granted Nov 22, 2016·4 cites·10 claims
- 4589US9196612B2Semiconductor device including merged-unmerged work function metal and variable fin pitchIBM·Filed 2014·Granted Nov 24, 2015·8 cites·20 claims
- 4688US11164787B2Two-stage top source drain epitaxy formation for vertical field effect transistors enabling gate last formationIBM·Filed 2019·Granted Nov 2, 2021·4 cites·20 claims
- 4788US10431503B2Sacrificial cap for forming semiconductor contactIBM·Filed 2017·Granted Oct 1, 2019·4 cites·18 claims
- 4888US9870958B2Forming CMOSFET structures with different contact linersIBM·Filed 2016·Granted Jan 16, 2018·4 cites·18 claims
- 4987US10985073B2Vertical field effect transistor replacement metal gate fabricationIBM·Filed 2019·Granted Apr 20, 2021·4 cites·20 claims
- 5087US10950492B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2019·Granted Mar 16, 2021·3 cites·15 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Zuoguang Liu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →