Substrate processing apparatus and substrate processing method

Abstract

A substrate processing method includes an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an etching gas into the vacuum chamber while rotating the rotary table to etch a film formed on a surface of the substrate. The etching step includes supplying the etching gas to the surface of the rotary table and supplying a purge gas from a plurality of purge gas supply units that are provided near a region where the etching gas is supplied, and controlling an etching amount of etching the film by independently varying a flow rate of the purge gas that is supplied from each of the plurality of purge gas supply units.

What is claimed is: 
     
       1. A substrate processing method comprising:
 an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an etching gas into the vacuum chamber while rotating the rotary table to etch a film formed on a surface of the substrate; 
 wherein the etching step includes
 supplying the etching gas to the surface of the rotary table and supplying a purge gas from a plurality of purge gas supply units that are provided near a region where the etching gas is supplied; and 
 controlling an etching amount of etching the film by independently varying a flow rate of the purge gas that is supplied from each of the plurality of purge gas supply units. 
 
 
     
     
       2. The substrate processing method according to  claim 1 , wherein
 a flow rate of the purge gas supplied from each of the plurality of purge gas supply units is varied based on a distribution of the etching gas supplied to the surface of the rotary table. 
 
     
     
       3. The substrate processing method according to  claim 2 , wherein
 the flow rate of the purge gas is decreased to increase the etching amount, and the flow rate of the purge gas increased to decrease the etching amount. 
 
     
     
       4. The substrate processing method according to  claim 1 , further comprising
 a film forming step of supplying a first reaction gas and a second reaction gas, reacts with the first reaction gas, into the vacuum chamber while rotating the rotary table to form the film on the surface of the substrate. 
 
     
     
       5. The substrate processing method according to  claim 4 , wherein
 the film forming step includes a step of supplying the first reaction gas and the second reaction gas into the vacuum chamber without supplying the etching gas into the vacuum chamber while consecutively rotating the rotary table a plurality of times; and 
 the etching step includes a step of supplying the etching gas and the purge gas into the vacuum chamber without supplying the first reaction gas and the second reaction gas into the vacuum chamber while consecutively rotating the rotary table a plurality of times. 
 
     
     
       6. The substrate processing method according to  claim 4 , wherein
 the first reaction gas, the second reaction gas, the etching gas, and the purge gas are simultaneously supplied into the vacuum chamber while consecutively rotating the rotary table a plurality of times; and 
 the film forming step and the etching step are each performed once during one rotation cycle of the rotary table, and the rotation cycle is repeated a plurality of times.