Contact scheme for landing on different contact area levels

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a contact scheme for landing on different contact area levels of a semiconductor structure and methods of manufacture. The structure includes a first contact at a first level of the structure; a jumper contact at a second, upper level of the structure; an etch stop layer having an opening over the first contact and partially encapsulating the jumper contact with an opening exposing the jumper contact; and contacts in electrical contact with the first contact at the first level and the jumper contact at the second, upper level, through the openings.

What is claimed: 
     
       1. A structure, comprising:
 a first contact at a first level of the structure; 
 a jumper contact at a second, upper level of the structure; 
 an etch stop layer having an opening exposing the first contact and partially encapsulating the jumper contact with an opening exposing the jumper contact; and 
 contacts in electrical contact with the first contact at the first level and the jumper contact at the second, upper level, through the openings. 
 
     
     
       2. The structure of  claim 1 , wherein the jumper contact is in electrical contact with a second contact at a same level as the first contact. 
     
     
       3. The structure of  claim 2 , wherein the jumper contact is a tungsten plug structure. 
     
     
       4. The structure of  claim 2 , wherein the first contact is in electrical contact with a gate structure and the second contact is in electrical contact with a source/drain of the gate structure at a the first level of the structure. 
     
     
       5. The structure of  claim 4 , wherein the source/drain region is a raised source/drain region. 
     
     
       6. The structure of  claim 5 , wherein the contacts are copper extending to different levels of the structure. 
     
     
       7. The structure of  claim 1 , wherein the first contact and the jumper contact are tungsten. 
     
     
       8. The structure of  claim 1 , wherein the contacts are dual damascene structures extending to upper levels of the structure. 
     
     
       9. The structure of  claim 1 , wherein the contacts are different material than the jumper contact and the first contact. 
     
     
       10. A method, comprising:
 forming a first contact at a first level of a structure; 
 forming a jumper contact at a second, upper level of the structure; 
 forming an etch stop layer having an opening exposing the first contact and an opening over the jumper contact; and 
 forming contacts in electrical contact with the first contact at the first level and the jumper contact at the second, upper level, through the openings of the etch stop layer. 
 
     
     
       11. The method of  claim 10 , further comprising forming a second contact at the first level, the first contact contacting a gate structure and the second contact contacting a raised source/drain region. 
     
     
       12. The method of  claim 11 , wherein the jumper contact is formed in electrical connection with the second contact, and the first contact, the second contact, and the jumper contact are of a same material. 
     
     
       13. The method of  claim 11 , wherein the contacts are formed by a dual damascene process which are filled with a copper material in direct contact with the jumper contact and the first contact. 
     
     
       14. The method of  claim 10 , wherein the jumper contact is encapsulated by the etch stop layer. 
     
     
       15. The method of  claim 10 , further comprising forming an interlevel dielectric over the etch stop layer. 
     
     
       16. The method of  claim 15 , further comprising etching the interlevel dielectric by a wet oxide etching process which stops on the etch stop layer to allow for encapsulation of the jumper contact and thickening of the etch stop layer. 
     
     
       17. A method, comprising:
 forming a gate structure on a substrate; 
 forming a raised source/drain region on the substrate; 
 forming a first contact to the gate structure at a first level; 
 forming a second contact to the raised source/drain region at the first level; 
 forming a jumper contact to the second contact area at a second, upper level, with respect to the first level; and 
 forming dual damascene copper wiring structures landing on the first contact at the first level and on the jumper contact at the second, upper level. 
 
     
     
       18. The method of  claim 17 , further comprising encapsulating the jumper contact with an etch stop layer. 
     
     
       19. The method of  claim 17 , wherein the forming of the dual damascene copper wiring structures includes etching through the etch stop layer on a top surface of the first contact and on a stop surface of the jumper contact. 
     
     
       20. The method of  claim 17 , wherein the jumper contact, the first contact, and the second contact include tungsten material.