Power conversion device

Abstract

An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor module 300 and a flow channel formation body 1000 on which the power semiconductor module 300 is disposed. The power semiconductor module 300 has a high thermal conductor 920 which is disposed at a position between a semiconductor chip and the flow channel formation body 1000 and a sealing material that seals a power semiconductor element and the high thermal conductor 920 . The high thermal conductor 920 has a fin protruding to the flow channel formation body 1000 at the side of the flow channel formation body 1000 and a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

The invention claimed is: 
     
       1. A power conversion device comprising:
 a power semiconductor module comprising a power semiconductor element configured to convert a direct current into an alternating current; and 
 a flow channel formation body on which the power semiconductor module is disposed, 
 wherein the power semiconductor module comprises a high thermal conductor which is disposed at a position between the semiconductor element and the flow channel formation body, and a sealing material that seals the power semiconductor element and the high thermal conductor, 
 the high thermal conductor comprises a fin protruding toward the flow channel formation body at a side of the flow channel formation body, and 
 a portion of the sealing material that surrounds and does not cover the high thermal conductor and a leading edge of the fin are on a same plane. 
 
     
     
       2. The power conversion device according to  claim 1 , wherein the leading edge of the fin comprises a same material as does the sealing material. 
     
     
       3. The power conversion device according to  claim 1 , wherein the fin is formed by grinding the sealing material sealing the high thermal conductor in a groove shape. 
     
     
       4. The power conversion device according to  claim 1 , wherein the sealing material comprises a sealing portion to secure airtightness of a flow channel when the power semiconductor module is disposed on the flow channel formation body. 
     
     
       5. The power conversion device according to  claim 3 , wherein the fin is formed in a pin fin shape. 
     
     
       6. The power conversion device according to any one of  claim 1 , wherein the high thermal conductor is formed of a material containing carbon. 
     
     
       7. The power conversion device according to  claim 1 , wherein, in the sealing material, a surface of a flow channel side of the flow channel formation body is plated. 
     
     
       8. A method of manufacturing a power semiconductor module including a power semiconductor element converting a direct current into an alternating current, a high thermal conductor thermally connected to the semiconductor element, and a sealing material sealing the power semiconductor element and the high thermal conductor, the method comprising:
 a first step of sealing the high thermal conductor with the sealing material; and 
 a second step of processing the sealing material and the high thermal conductor integrally and forming a fin such that a portion of the sealing material that surrounds and does not cover the high thermal conductor and a leading edge of the fin are on a same plane. 
 
     
     
       9. The method of manufacturing a power semiconductor module according to  claim 8 , wherein, in the first step, the sealing material covers a surface of the high thermal conductor opposite to a side where the power semiconductor element is disposed and seals the high thermal conductor. 
     
     
       10. The method of manufacturing a power semiconductor module according to  claim 8 , wherein the fin is formed by grinding the sealing material sealing the high thermal conductor in a groove shape. 
     
     
       11. The power conversion device according to  claim 1 , wherein the high thermal conductor comprises a plurality of fins including the fin, the fins are spaced by respective gaps, and portions of the high thermal conductor disposed between the fins are exposed from the sealing material.