Power module

Abstract

A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate (40).

What is claimed is: 
     
       1. A power module having
 a leadframe, 
 a power semiconductor arranged on the leadframe, 
 a base plate for dispersing heat generated by the power semiconductor, and 
 a potting compound surrounding the leadframe and the power semiconductor, which physically connects the power semiconductor and/or the leadframe to the base plate, 
 wherein the potting compound is an inorganic cement, and 
 wherein the potting compound forms a layer arranged between the leadframe and the base plate to electrically insulate the power semiconductor from the base plate. 
 
     
     
       2. The power module according to  claim 1 , wherein the inorganic cement is an inorganic solid that results from the mixing of one or more powders with one or more liquids. 
     
     
       3. The power module according to  claim 1 , wherein the potting compound exhibits a thermal coefficient of expansion of 5 to 10 ppm/K. 
     
     
       4. The power module according to  claim 1 , wherein the potting compound exhibits a layer 20 to 200 μm thick between the leadframe and the base plate. 
     
     
       5. The power module according to  claim 1 , wherein the base plate is designed as a heatsink. 
     
     
       6. The power module according to  claim 2 , wherein the potting compound exhibits a thermal coefficient of expansion of 5 to 10 ppm/K. 
     
     
       7. The power module according to  claim 2 , wherein the potting compound exhibits a layer arranged between the leadframe and the base plate. 
     
     
       8. The power module according to  claim 3 , wherein the potting compound exhibits a layer arranged between the leadframe and the base plate. 
     
     
       9. The power module according  claim 2 , wherein the potting compound exhibits a layer 20 to 200 μm thick between the leadframe and the base plate. 
     
     
       10. The power module according to  claim 2 , wherein the mixing of the one or more powders with the one or more liquids results in an acid and base reaction that forms a metal salt that acts as a binding matrix. 
     
     
       11. The power module according to  claim 1 , wherein the layer of the potting compound arranged between the leadframe and the base plate is between the power semiconductor and the base plate.