Structure and formation method of semiconductor device structure

Abstract

Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.

What is claimed is: 
     
       1. A semiconductor device structure, comprising:
 a first dielectric layer and a second dielectric layer over a semiconductor substrate, wherein a cavity penetrates through the first dielectric layer and the second dielectric layer; and 
 a first movable membrane between the first dielectric layer and the second dielectric layer, wherein the first movable membrane is partially exposed through the cavity, and wherein the first movable membrane comprises first corrugated portions arranged along an edge of the cavity, and wherein bottom surfaces of the first corrugated portions are lower than a top surface of the first dielectric layer and partially exposed through the cavity, and wherein the bottom surfaces of the first corrugated portions are between a top surface of the first dielectric layer and a bottom surface of the first dielectric layer, and bottom surfaces of the first corrugated portions are partially embedded in the first dielectric layer. 
 
     
     
       2. The semiconductor device structure as claimed in  claim 1 , wherein the first corrugated portions intersect the edge of the cavity and extend into the first dielectric layer. 
     
     
       3. The semiconductor device structure as claimed in  claim 1 , wherein a symmetrical axis of the first corrugated portions substantially aligns to a center of the first movable membrane. 
     
     
       4. The semiconductor device structure as claimed in  claim 1 , wherein the first corrugated portions are arranged in a ring-shaped array, and the first movable membrane further comprises recessed portions in the cavity, and wherein the recessed portions are surrounded by the ring-shaped array. 
     
     
       5. The semiconductor device structure as claimed in  claim 1 , wherein the first movable membrane further comprises recessed portions in the cavity, and wherein the recessed portions and the first corrugated portions have a substantially equal thickness. 
     
     
       6. The semiconductor device structure as claimed in  claim 1 , wherein the first corrugated portions overlap the first dielectric layer, the second dielectric layer and the semiconductor substrate. 
     
     
       7. The semiconductor device structure as claimed in  claim 1 , further comprising:
 a third dielectric layer over the second dielectric layer; and 
 a second movable membrane between the second dielectric layer and the third dielectric layer, wherein the second movable membrane comprises second corrugated portions in the cavity, and wherein the second corrugated portions comprise isolation layers and a membrane material between the isolation layers. 
 
     
     
       8. The semiconductor device structure as claimed in  claim 1 , wherein the first corrugated portions are in direct contact with a sidewall of the first dielectric layer. 
     
     
       9. A semiconductor device structure, comprising:
 a first dielectric layer and a second dielectric layer over a semiconductor substrate; and 
 a first diaphragm suspended between the first dielectric layer and the second dielectric layer, wherein the first diaphragm comprises first recessed portions and second recessed portions surrounding the first recessed portions, and wherein the second recessed portions are anchored between the first dielectric layer and the second dielectric layer, the second recessed portions are partially exposed by a cavity penetrating through the first dielectric layer and the second dielectric layer, and the second recessed portions have larger dimensions than the first recessed portions, and wherein the second recessed portions are partially overlapped with the first dielectric layer. 
 
     
     
       10. The semiconductor device structure as claimed in  claim 9 , wherein the second recessed portions are integrated with the first recessed portions. 
     
     
       11. The semiconductor device structure as claimed in  claim 9 , wherein the second recessed portions are arranged periodically in a circular or circle-like array. 
     
     
       12. The semiconductor device structure as claimed in  claim 9 , wherein a top surface of the first diaphragm comprises dimples corresponding to the first recessed portions and corrugations corresponding to second recessed portions. 
     
     
       13. The semiconductor device structure as claimed in  claim 9 , further comprising:
 a second diaphragm suspended over the second dielectric layer, wherein the second diaphragm comprises third recessed portions partially embedded in the second dielectric layer. 
 
     
     
       14. The semiconductor device structure as claimed in  claim 9 , further comprising:
 a second diaphragm suspended over the first diaphragm, wherein the second diaphragm comprises movable features over the first recessed portions and third recessed portions over the second recessed portions, and wherein the movable features are surrounded by the third recessed portions. 
 
     
     
       15. The semiconductor device structure as claimed in  claim 9 , wherein bottom surfaces of the second recessed portions are lower than a top surface of the first dielectric layer. 
     
     
       16. A semiconductor device structure, comprising:
 a first dielectric layer and a second dielectric layer over a semiconductor substrate, wherein a cavity penetrates through the first dielectric layer and the second dielectric layer; and 
 a first movable membrane between the first dielectric layer and the second dielectric layer, wherein the first movable membrane is partially exposed through the cavity, and wherein the first movable membrane comprises first corrugated portions arranged along an edge of the cavity, and wherein the first corrugated portions are in direct contact with a sidewall of the first dielectric layer; 
 a third dielectric layer over the second dielectric layer; and 
 a second movable membrane between the second dielectric layer and the third dielectric layer, wherein the second movable membrane comprises second corrugated portions in the cavity. 
 
     
     
       17. The semiconductor device structure as claimed in  claim 16 , wherein the second corrugated portions comprise isolation layers and a membrane material between the isolation layers. 
     
     
       18. The semiconductor device structure as claimed in  claim 16 , wherein the second corrugated portions are in direct contact with a sidewall of the second dielectric layer. 
     
     
       19. The semiconductor device structure as claimed in  claim 16 , further comprising:
 a conductive layer extending into the third dielectric layer from a top surface of the third dielectric layer. 
 
     
     
       20. The semiconductor device structure as claimed in  claim 19 , wherein the conductive layer is electrically connected to the second corrugated portions of the second movable membrane.