Method of forming silicon-containing film

Abstract

A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl3 (wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si—Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.

What is claimed is: 
     
       1. A method of forming a silicon-containing film, comprising:
 an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl 3  (wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si—Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and 
 a nitriding step of nitriding the silicon-containing gas adsorbed to the surface of each of the substrates to form a silicon nitride by supplying a nitriding gas, which nitrides the silicon-containing gas, to the surface of each of the substrate and depositing a reaction product of the silicon-containing gas and the nitriding gas on the surface of each of the substrate. 
 
     
     
       2. The method of  claim 1 , wherein in the adsorption step, the substrates are heated to a temperature of 400 degrees C. to 850 degrees C. 
     
     
       3. The method of  claim 1 , wherein the silicon-containing gas is one of HSiCl 3 , BrSiCl 3  and ISiCl 3 . 
     
     
       4. The method of  claim 1 , wherein the silicon-containing gas is HSiCl 3 . 
     
     
       5. The method of  claim 1 , wherein the nitriding gas is a nitrogen-containing gas. 
     
     
       6. The method of  claim 5 , wherein the nitriding gas is NH 3 . 
     
     
       7. The method of  claim 1 , wherein a recess is formed on the surface of each of the substrates, and the silicon-containing film is formed in the recess.